first and euRopEAn siC eigTh Inches pilOt liNe

SiC Power G3 MOSFET at 150mm Scale will be available at spec to let application partners start This deliverable is different from D32 because it report the ultimate planar technology and the D32 refers to the G2 instead It was already submitted but as for the deliverable name typo was still referred to the old name before the 1st amendment Now it is set and it will be resubmitted accordingly

SiC Power Planar MOSFET at 150mm Scale Availability

SiC Power Planar MOSFET at 150mm Scale will be Available at spec. to let application partners start.

200 mm Microwave Plasma Equipment Avaliability

200 mm Microwave Plasma Equipment will be developed and its availability provided as planned

Smart Energy, Low Power Microgrid Demonstrator Availability

A final Smart Energy, Low Power Microgrid Demonstrator Availability will be reported.

Hi Quality Substrate Availability

Hi Quality Substrate Availability will be provided according to Task 1.1 table

Good Quality Substrate Hi Quality Substrate Availability

Good Quality Substrate Availability will be provided according to Task 1.1 table

Database of Dissemination activities III

Third year Database of Dissemination activities

Report on Final REACTION Equipment Industry 4.0 Compliancy

a final REACTION Equipment Industry 40 Compliancy will be reported

Database of Dissemination activities I

First year Database of Dissemination activities

"8"" SiC Bare Dice Test Vehicles Characterization Report"

8 SiC Bare Dice Test Vehicles Characterization Report will be issued to validate WP3 activities

Report of activities on participation in Smart Production, Energy and Mobility Standardization committee

All the activities on participation in Smart Production Energy and Mobility standardization committee will be reported

Packaging & Assembly Flow Report

A Packaging Assembly Flow report will be issued to set the mission profile of the demonstrator device in terms of the final silicon technology device geometry performance thermal electrical mechanical quality and reliabilityrequirements to satisfy the final demonstrator requirements

Exploitation Plan I

Partners will develop and maintain individual exploitation strategies which will be collected in a common REACTION Exploitation Plan that will be reported twice along the project

Exploitation Plan II

Partners will develop and maintain individual exploitation strategies which will be collected in a common REACTION Exploitation Plan that will be reported twice along the project

Database of Dissemination activities II

Second year Database of Dissemination activities

Processing and Evaluation Final Application Demos Report

Processing and Evaluation of Final Application Demonstrators will be reported

First REACTION International Workshop

First REACTION International Workshop will be organized.

Second REACTION International Workshop

A second REACTION International Workshop will be held

Project web site

The consortium will implement an Extranet-based secure collaborative tool for effective and secured communication. The tool will be accessible, under secured access control, to the partners to keep track of the progresses. A special section of the website will be available to public access. It will contain info on Consortium members and on current research activities, a calendar of public scientific events.

Pubblicazioni

Electrically Active Defects in SiC Schottky Diodes

Autori: DROBNÝ, Jakub - CHVÁLA, Aleš – KOSA, Arpad - MESSINA, Angelo Alberto - STUCHLÍKOVÁ, Ľubica - DONOVAL, Daniel
Pubblicato in: Comenius University, 2020, S. 17-18, 2020
Editore: Comenius University, 2020, S. 17-18

Highly Compact Partial Power Converter for a Highly Efficient PV-BESS Stacked Generation System

Autori: P. Granello, L. Schirone, P. Bauer, R. Miceli and F. Pellitteri
Pubblicato in: IEEE, 2022
Editore: IEEE
DOI: 10.1109/smart55236.2022.9990160

Distributed neural network for electrothermal circuit model of SiC power MOSFET.

Autori: CHVÁLA, Aleš - ČERNAJ, Ľuboš - MAREK, Juraj - KOZÁRIK, Jozef - MESSINA, Angelo Alberto - VINCIGUERRA, Vincenzo - DONOVAL, Daniel
Pubblicato in: MicDAT 2022, 2022, ISBN 978-84-09-43856-3
Editore: MicDAT 2022

Fuel Cell Based Inductive Power Transfer System for Supercapacitors Constant Current Charging

Autori: N. Campagna, V. Castiglia and R. Miceli
Pubblicato in: IEEE, 2021
Editore: IEEE
DOI: 10.1109/ever52347.2021.9456620

Electrification of a Local Public Transportation System: a Case Study

Autori: N. Campagna, V. Castiglia, R. Miceli and G. Scaglione
Pubblicato in: IEEE, 2022, ISBN 978-1-6654-6925-8
Editore: IEEE
DOI: 10.1109/gpecom55404.2022.9815749

A comparison of different DC-DC converters for energy storage management in nearly-Zero Energy Buildings

Autori: Filippo Pellitteri, Maurizio Cellura, Francesco Guarino, Rosario Miceli, Luigi Schirone
Pubblicato in: 2020 9th International Conference on Renewable Energy Research and Application (ICRERA), 2020, Pagina/e 505-509, ISBN 978-1-7281-7369-6
Editore: IEEE
DOI: 10.1109/icrera49962.2020.9242686

Experimental investigation on a cascode-based three-phase inverter for AC drives

Autori: F. Pellitteri, A. O. Di Tommaso, R. Miceli, A. Busacca and G. Vassallo,
Pubblicato in: IEEE, 2022
Editore: IEEE
DOI: 10.23919/aeitautomotive52815.2021.9662898

Electro-thermal simulation analysis and optimization of SiC Power MOSFET under UIS test condition.

Autori: CHVÁLA, Aleš - MAREK, Juraj - KOZÁRIK, Jozef - MESSINA, Angelo Alberto - VINCIGUERRA, Vincenzo - DONOVAL, Daniel
Pubblicato in: WOCSDICE‐EXMATEC 2022, 2022
Editore: WOCSDICE‐EXMATEC 2022

Neural Network for Electrothermal Circuit Model of SiC Power MOSFET

Autori: A. Chvala, L. Cernaj, J. Marek, P. Pribytny, J. Kozarik, D. Donoval
Pubblicato in: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Pagina/e 88-91, ISBN 978-1-7281-9776-0
Editore: IEEE
DOI: 10.1109/asdam50306.2020.9393854

Optimal sizing for a Battery-Supercapacitor Hybrid Energy Storage System

Autori: A. Busacca, N. Campagna, V. Castiglia and R. Miceli
Pubblicato in: IEEE, 2022
Editore: IEEE
DOI: 10.1109/pedg54999.2022.9923173

"The ""first and euRopEAn siC eighT Inches pilOt liNe"": a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing Applications in the Automotive Power Electronics Sector"

Autori: Angelo Alberto Messina, Antonio Imbruglia, Michele Calabretta, Vincenzo Vinciguerra, Calin Constantin Moise, Alessandro Sitta, Marius Enachescu, Fabrizio Roccaforte
Pubblicato in: 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2020, Pagina/e 1-6, ISBN 978-8-8872-3749-8
Editore: IEEE
DOI: 10.23919/aeitautomotive50086.2020.9307385

Design of a 20-kW SiC-Based Phase-Shifted DC/DC Full Bridge Converter

Autori: P. Grzejszczak, K. Wolski, M. Szmczak, A. Czaplicki and A. Sitnik
Pubblicato in: IEEE Progress in Applied Electrical Engineering (PAEE), 2021, ISSN 1803-7232
Editore: IEEE
DOI: 10.1109/paee53366.2021.9497450

Virtual Synchronous Generator: An application to Microgrid Stability

Autori: G.Ala, A.O. Di Tommaso, R. Miceli, C. Nevoloso, G. Scaglione, G. Schettino and F. Viola
Pubblicato in: IEEE, 2022
Editore: IEEE
DOI: 10.1109/icrera55966.2022.9922782

Small-Signal Modeling and Experimental Validation of the Three-phase Quasi-Z-Source Inverter

Autori: V. Castiglia, R. Miceli, F. Blaabjerg, Y. Yang
Pubblicato in: 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), 2020, Pagina/e 1-8, ISBN 978-1-7281-7160-9
Editore: IEEE
DOI: 10.1109/compel49091.2020.9265716

Simulation and modeling of thermo-mechanical properties and reliability of power IGBT devices and modules

Autori: Franitšek Kovaľ, Aleš Chvála
Pubblicato in: ADEPT 2023, 2023
Editore: The 11th international conference on Advances in Electronic and Photonic Technologies. Podbanské (Slovakia), 12-15 Jun 2023

Three-dimensional feature characterization by inline Xe plasma FIB: delayering and deep milling implementation

Autori: Franz Niedermeier, Agnes Fros, Max Boeckl, Wolfgang Kipferl, Michaela Braun, Albert Birner, Haim Pearl, Thomas Schubert, Allen Lee
Pubblicato in: Metrology, Inspection, and Process Control for Microlithography XXXIV, 2020, Pagina/e 30, ISBN 9781510634183
Editore: SPIE
DOI: 10.1117/12.2551657

Characterization and evaluation of current transport properties of power SiC Schottky diode

Autori: Aleš Chvála, Juraj Marek, Jakub Drobný, L’ubica Stuchlíková, Angelo Alberto Messina, Vincenzo Vinciguerra, Daniel Donoval
Pubblicato in: Materials Today, 2021, ISSN 2214-7853
Editore: elsevier
DOI: 10.1016/j.matpr.2021.06.150

Field Oriented Control of IPMSM Fed by Multilevel Cascaded H-Bridges Inverter with NI-SOM sbRIO-9651 FPGA controller

Autori: A. O. D. Tommaso et al.
Pubblicato in: IEEE, 2022
Editore: IEEE
DOI: 10.1109/speedam53979.2022.9841978

Modelling, Simulation and Characterization of a Supercapacitor in Automotive Applications

Autori: V. Castiglia, N. Campagna, A.O. Di Tommaso, R. Miceli, F. Pellitteri, C. Puccio, F. Viola
Pubblicato in: 2020 Fifteenth International Conference on Ecological Vehicles and Renewable Energies (EVER), 2020, Pagina/e 1-6, ISBN 978-1-7281-5641-5
Editore: IEEE
DOI: 10.1109/ever48776.2020.9243065

A Configuration of 3-phase Traction Inverter Employing SiC Devices

Autori: F. Pellitteri, A. O. Di Tommaso, R. Miceli, R. Rizzo and G. Vassallo
Pubblicato in: IEEE, 2022
Editore: IEEE
DOI: 10.1109/cpe-powereng54966.2022.9880872

Enhanced Modelling for Extended Performance Analysis of Interior Permanent Magnet Synchronous Machine Drive fed with Cascaded H-Bridges Multilevel Inverter

Autori: A. Dietz, A. O. di Tommaso, R. Miceli, C. Nevoloso and G. Schettino
Pubblicato in: IEEE, 2021
Editore: IEEE
DOI: 10.1109/ever52347.2021.9456635

SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs

Autori: P. Fiorenza, C. Bongiorno, A. Messina, M. Saggio, F. Giannazzo, F. Roccaforte,
Pubblicato in: 2022
Editore: IEEE
DOI: 10.1109/irps48227.2022.9764490

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs

Autori: M. Cioni, P. Fiorenza, F. Roccaforte, M. Saggio, S. Cascino, A. Messina, V. Vinciguerra, M. Calabretta, A. Chini
Pubblicato in: IEEE International Reliability Physics Symposium (IRPS2022), 2022
Editore: IEEE
DOI: 10.1109/irps48227.2022.9764543

Qualifying Inline Xe Plasma FIB - Returning Milled Wafers Back to Production

Autori: Franz Niedermeier, Rolf Kammerer, Wolfgang Kipferl, Stephan Henneck, Haim Pearl
Pubblicato in: 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2020, Pagina/e 1-6, ISBN 978-1-7281-5876-1
Editore: IEEE
DOI: 10.1109/asmc49169.2020.9185315

Hydrogen Supplied Wireless Charging System for Electric Vehicles

Autori: N. Campagna, A. O. Di Tommaso, V. Castiglia, F. Pellitteri, R. Miceli, G. Schettino
Pubblicato in: 2020 Fifteenth International Conference on Ecological Vehicles and Renewable Energies (EVER), 2020, Pagina/e 1-6, ISBN 978-1-7281-5641-5
Editore: IEEE
DOI: 10.1109/ever48776.2020.9242925

Practical Implementation of a Synchronous PWM Strategy for Low Switching Frequency FOC of im Drives with ATSAM3X8E Microcontroller

Autori: A. O. Di Tommaso, R. Miceli, C. Nevoloso and S. Z. Marsala
Pubblicato in: IEEE, 2021
Editore: IEEE
DOI: 10.1109/ever52347.2021.9456601

Experimental Characterization Of a Double Receiver Dynamic Wireless Charging System

Autori: Nicola Campagna, Vincenzo Castiglia, Antonino Oscar Di Tommaso, Rosario Miceli, Filippo Pellitteri, Viola Fabio
Pubblicato in: 2020 9th International Conference on Renewable Energy Research and Application (ICRERA), 2020, Pagina/e 494-498, ISBN 978-1-7281-7369-6
Editore: IEEE
DOI: 10.1109/icrera49962.2020.9242731

An integrated approach to optimize solder joint reliability

Autori: Alessandro Sitta, Sebastiano Russo, Marco Torrisi, Angelo Alberto Messina, Giuseppe D'Arrigo, Gaetano Sequenzia, Marco Renna, Michele Calabretta
Pubblicato in: 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2020, Pagina/e 1-5, ISBN 978-1-7281-6049-8
Editore: IEEE
DOI: 10.1109/eurosime48426.2020.9152688

Supercapacitor-Based Shuttle Bus Characterization for Urban Charging Infrastructure

Autori: A. Busacca, N. Campagna, V. Castiglia and R. Miceli
Pubblicato in: IEEE, 2021
Editore: IEEE
DOI: 10.1109/icrera52334.2021.9598678

Switching Capacitors Transformerless Bidirectional DC-DC Converter

Autori: Christian Puccio, Filippo Pellitteri, Massimo Caruso, Rosario Miceli
Pubblicato in: 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2020, Pagina/e 1-5, ISBN 978-8-8872-3749-8
Editore: IEEE
DOI: 10.23919/aeitautomotive50086.2020.9307427

Economy driven SiC Power Electronics Technology Development supported by the ECSEL Joint Undertaking framework program funds

Autori: Tomasz Bieniek, Grzegorz Janczyk, Adam Sitnik, Angelo Messina
Pubblicato in: TechConnect Briefs 2022, 2022, ISBN 979-8-218-00238-1
Editore: TechConnect World Innovation NANOTECH 2022 Conference & Expo, Washington D.C., US, June 13-15, 2022

Impact of Soft- and Hard-Switching transitions on VTH and RON Drifts in packaged SiC MOSFETs

Autori: M. Cioni and A. Chini
Pubblicato in: IEEE, 2021
Editore: IEEE
DOI: 10.1109/wipda49284.2021.9645124

Evaluation and characterisation of transport properties of SiC Schottky diodes

Autori: CHVÁLA, Aleš - MAREK, Juraj - DROBNÝ, Jakub - STUCHLÍKOVÁ, Ľubica - MESSINA, Angelo Alberto - DONOVAL, Daniel
Pubblicato in: Comenius University, 2020, S. 17-18., 2020
Editore: Comenius University, 2020, S. 17-18.

Optimization of High Frequency Magnetic Devices with Consideration of the Effects of the Magnetic Material, the Core Geometry and the Switching Frequency

Autori: Sobhi Barg, Muhammad Farhan Alam, Kent Bertilsson
Pubblicato in: 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), 2020, Pagina/e 1-8, ISBN 978-9-0758-1536-8
Editore: IEEE
DOI: 10.23919/epe20ecceeurope43536.2020.9215860

Design and Validation of an Inductive Power Transfer System with Zero Phase Angle Detection Algorithm

Autori: N. Campagna, V. Castiglia, R. Miceli and S. Valtchev
Pubblicato in: IEEE, 2022
Editore: IEEE
DOI: 10.1109/iecon49645.2022.9968408

The “first and euRopEAn siC eigTh Inches pilOt line” REACTION project as a Driver for key European SiC Technologies focused on Power Electronics Development.

Autori: T. Bieniek, G. Janczyk, A. Sitnik, A. Messina,
Pubblicato in: Journal: TechConnect Briefs, Numero Volume: TechConnect Briefs 2019, 2019, Pagina/e Pages: 256 - 259, ISBN 978-0-9988782-8-7
Editore: TechConnect Briefs 2019, TechConnect.org

Electro-thermal spice circuit model of HEMT device

Autori: Ľ. Černaj, A. Chvála, J. Marek, D. Donoval, J. Kozárik, T. Závozník, M. Donoval
Pubblicato in: Advances in Electronic and Photonic Technologies - ADEPT 2019, 2019, ISBN 978-80-554-1568-0
Editore: University of Zilina in EDIS-Publishing Centre of UZ

Reconfigurable three state dc-dc power converter for the wide output range applications

Autori: M.Abu Bakar, Farhan Alam, Moumita Das, Sobhi Barg, Kent Bertilsson
Pubblicato in: IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, 2019, Pagina/e 4911-4916, ISBN 978-1-7281-4878-6
Editore: IEEE
DOI: 10.1109/iecon.2019.8927652

Modeling of the Geometry Effect on the Core Loss and Verification with a Measurement Technique Based on the Seebeck Effect and FEA

Autori: Sobhi Barg, Farhan Alam, Kent Bertilsson
Pubblicato in: IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, 2019, Pagina/e 1832-1837, ISBN 978-1-7281-4878-6
Editore: IEEE
DOI: 10.1109/iecon.2019.8927344

A Novel Symmetrical Boost Modulation Method for qZS-based CHB Inverters

Autori: G. Schettino, R. Miceli, V. Castiglia, F. Viola, F. Blaabjerg, Y. Yang
Pubblicato in: 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), 2020, Pagina/e 1-7, ISBN 978-1-7281-7160-9
Editore: IEEE
DOI: 10.1109/compel49091.2020.9265660

3-D device electro-thermal simulation methodology for optimization of SiC power MOSFET under UIS test condition.

Autori: CHVÁLA, Aleš - MAREK, Juraj - KOZÁRIK, Jozef - MESSINA, Angelo Alberto - VINCIGUERRA, Vincenzo - DONOVAL, Daniel
Pubblicato in: ICSCRM 2022, 2022
Editore: ICSCRM 2022

Modelling, simulation and characterization of a supercapacitor

Autori: Vincenzo Castiglia, Nicola Campagna, Ciro Spataro, Claudio Nevoloso, Fabio Viola, Rosario Miceli
Pubblicato in: 2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON), 2020, Pagina/e 46-51, ISBN 978-1-7281-5200-4
Editore: IEEE
DOI: 10.1109/melecon48756.2020.9140474

Improved High-Fidelity IPMSM mathematical model Including Saturation, Cross-Coupling, Torque Ripple and Iron Loss effects

Autori: A. O. Di Tommaso, R. Miceli, C. Nevoloso, G. Scaglione and G. Schettino
Pubblicato in: IEEE, 2022
Editore: IEEE
DOI: 10.1109/icem51905.2022.9910812

Thermal measurement and numerical analysis for automotive power modules

Autori: Alessandro Sitta, Marco Renna, Angelo Alberto Messina, Gaetano Sequenzia, Giuseppe D'Arrigo, Michele Calabretta
Pubblicato in: 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2020, Pagina/e 1-3, ISBN 978-1-7281-6049-8
Editore: IEEE
DOI: 10.1109/eurosime48426.2020.9152204

CPLD and dsPIC Hybrid-Controller for Converter Prototypingdriving a Reconfigurable Transformer Phase-Shifted Full-Bridge

Autori: S. Haller, M. A. Bakar, K. Bertilsson
Pubblicato in: 2020
Editore: VDE VERLAG GMBH · Berlin · Offenbach

Preliminary test on a cascode switch for high-frequency applications

Autori: Filippo Pellitteri, Vincenzo Castiglia, Antonino Oscar Di Tommaso, Rosario Miceli, Giorgio Vassallo, Luigi Schirone
Pubblicato in: 2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES), 2020, Pagina/e 377-382, ISBN 978-1-7281-4017-9
Editore: IEEE
DOI: 10.1109/ieses45645.2020.9210672

An anti-islanding protection based on RoCoF compliant with ENTSO-E and IEC 62116

Autori: D. Cañete, S. Martín-Arroyo, M. García-Gracia, A. Llamazares, I. Sáez
Pubblicato in: Renewable Energy and Power Quality Journal, Numero 20, 2022, Pagina/e 348-352, ISSN 2172-038X
Editore: Renewable Energy and Power Quality Journal
DOI: 10.24084/repqj20.307

Design, implementation and experimental results of an inductive power transfer system for electric bicycle wireless charging

Autori: Filippo Pellitteri, Nicola Campagna, Vincenzo Castiglia, Alfonso Damiano, Rosario Miceli
Pubblicato in: IET Renewable Power Generation, 2020
Editore: IET Renewable Power Generation
DOI: 10.1049/iet-rpg.2020.0056

A Quasi-Z-Source based Hybrid Energy Storage System with Battery and Ultracapacitor Integration

Autori: V. Castiglia, R. Miceli, F. Blaabjerg and Y. Yang
Pubblicato in: IEEE, 2020
Editore: IEEE
DOI: 10.1109/ipemc-ecceasia48364.2020.9367629

Electrically active defects in power SiC-MOSFET before and after applied electrical stress

Autori: V. Malik, M. Matus, A. Chvala, J. Marek, V. Vinciguerra, A. A. Messina, L.Stuchlikova
Pubblicato in: ADEPT 2023, 2023
Editore: The 11th international conference on Advances in Electronic and Photonic Technologies. Podbanské (Slovakia), 12-15 Jun 2023

Electro-thermo-mechanical simulation analysis and optimization of SiC power MOSFET under UIS test condition.

Autori: CHVÁLA, Aleš - MAREK, Juraj - KOZÁRIK, Jozef - MESSINA, Angelo Alberto - VINCIGUERRA, Vincenzo - DONOVAL, Daniel.
Pubblicato in: 2022, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/asdam55965.2022.9966742

Simulation of parasitic effects on Silicon Carbide devices for automotive electric traction

Autori: Filippo Pellitteri, Massimo Caruso, Rosario Miceli, Dario Benigno, Salvatore Stivala, Alessandro Busacca, Vincenzo Vinciguerra, Angelo Alberto Messina, Alessandra Raffa
Pubblicato in: 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2020, Pagina/e 1-6, ISBN 978-8-8872-3749-8
Editore: IEEE
DOI: 10.23919/aeitautomotive50086.2020.9307394

A prototypal PCB board for the EMI characterization of SiC-based innovative switching devices

Autori: Filippo Pellitteri, Massimo Caruso, Salvatore Stivala, Antonino Parisi, Vincenzo Vinciguerra, Angelo Messina, Guido Ala, Fabio Viola, Rosario Miceli, Alessandro Busacca
Pubblicato in: 2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON), 2020, Pagina/e 52-56, ISBN 978-1-7281-5200-4
Editore: IEEE
DOI: 10.1109/melecon48756.2020.9140633

Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter

Autori: F. Pellitteri et al.,
Pubblicato in: IEEE, 2021
Editore: IEEE
DOI: 10.1109/cpe-powereng50821.2021.9501191

An Iterative Method for Bifurcation-Free Resonant Inductive Power Transfer System Design

Autori: N. Campagna, V. Castiglia, R. Miceli and F. Pellitteri,
Pubblicato in: IEEE, 2021
Editore: IEEE
DOI: 10.1109/icrera52334.2021.9598544

Power Module Ceramic Substrates: mechanical characterization and modeling

Autori: Alessandro Sitta, Marco Renna, Angelo Alberto Messina, Giuseppe Mirone, Giuseppe D'Arrigo, Michele Calabretta
Pubblicato in: 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2020, Pagina/e 1-5, ISBN 978-1-7281-6049-8
Editore: IEEE
DOI: 10.1109/eurosime48426.2020.9152670

Electrically active defects in SiC planar power MOSFET

Autori: DROBNÝ, Jakub - MAREK, Juraj - MATUŠ, Matej - CHVÁLA, Aleš - MESSINA, Angelo Alberto - VINCIGUERRA, Vincenzo - STUCHLÍKOVÁ, Ľubica
Pubblicato in: SURFINT - SREN VII, 2021, ISBN 978-80-223-5296-3
Editore: Cornenius University

“Educational synthesis for LCL Filter Design and Performance Analysis for a 20-kW, 25-kHz SiC inverter”

Autori: S. Martín-Arroyo, M. García-Gracia, A. Llamazares D. Cañete, J. Herrero Ciudad
Pubblicato in: IEEE, Numero 20, 2022, Pagina/e 1-6, ISBN 978-1-6654-2161-4
Editore: XV edición del Congreso Tecnología, Aprendizaje y Enseñanza de la Electrónica (TAEE’22)
DOI: 10.1109/taee54169.2022.9840623

Characterization of Electrical Properties of Power SiC Schottky Diodes

Autori: Aleš Chvála, Juraj Marek, Lubica Stuchliková, Matej Matus, Vincenzo Vinciguerra and Angelo Alberto Messina
Pubblicato in: WOCSDICE‐EXMATEC 2023, 2023
Editore: WOCSDICE‐EXMATEC 2023

TCAD modeling of bias temperature instabilities in SiC MOSFETs

Autori: G. Carangelo, S. Reggiani, G. Consentino, F. Crupi, G. Meneghesso
Pubblicato in: Solid-State Electronics, Numero 18, 2021, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108067

A 2×3 Reconfigurable Modes Wide Input Wide Output Range DC-DC Power Converter

Autori: M. Abu Bakar, M. Farhan Alam, Mats Wardemark, Kent Bertilsson
Pubblicato in: IEEE Access, Numero 9, 2021, Pagina/e 44292-44303, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2021.3066525

Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

Autori: Paolo Badalà, Simone Rascunà, Brunella Cafra, Anna Bassi, Emanuele Smecca, Massimo Zimbone, Corrado Bongiorno, Cristiano Calabretta, Francesco La Via, Fabrizio Roccaforte, Mario Saggio, Giovanni Franco, Angelo Messina, Antonino La Magna, Alessandra Alberti
Pubblicato in: Materialia, Numero 9, 2020, Pagina/e 100528, ISSN 2589-1529
Editore: Elsevier
DOI: 10.1016/j.mtla.2019.100528

Characterization of Parasitic Impedance in PCB Using a Flexible Test Probe Based on a Curve-Fitting Method

Autori: A. Llamazares, M. Garcia-Gracia, S. Martin-Arroyo
Pubblicato in: IEEE Access, Numero 9, 2021, Pagina/e 40695-40705, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2021.3064190

Selective Doping in Silicon Carbide Power Devices

Autori: F. Roccaforte, P. Fiorenza, M. Vivona, G. Greco, F. Giannazzo
Pubblicato in: Materials, Numero 14, 2021, ISSN 1996-1944
Editore: MDPI Open Access Publishing
DOI: 10.3390/ma14143923

A quasi-Z-source-based inductive power transfer system for constant current/constant voltage charging applications

Autori: Castiglia, V.; Campagna, N.; Miceli, R.; Viola, F.; Blaabjerg, F. A
Pubblicato in: Electronics, 2021, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics10232900

Materials and Processes for Schottky Contacts on Silicon Carbide

Autori: M. Vivona, F. Giananzzo, F. Roccaforte
Pubblicato in: Materials, 2021, ISSN 1996-1944
Editore: MDPI Open Access Publishing
DOI: 10.3390/ma15010298

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Autori: M. Vivona, G. Greco, M. Spera, P. Fiorenza, F. Giannazzo, A. La Magna, F. Roccaforte,
Pubblicato in: J. Phys. D: Appl. Phys., Numero 54, 2021, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ac13f3

Core Loss Modeling and Calculation for Trapezoidal Magnetic Flux Density Waveform

Autori: sobhi Barg, Kent Bertilsson
Pubblicato in: IEEE Transactions on Industrial Electronics, 2020, Pagina/e 1-1, ISSN 0278-0046
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tie.2020.3013750

Design and Realization of a Bidirectional Full Bridge Converter with Improved Modulation Strategies

Autori: Filippo Pellitteri, Rosario Miceli, Giuseppe Schettino, Fabio Viola, Luigi Schirone
Pubblicato in: Electronics, Numero 9/5, 2020, Pagina/e 724, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics9050724

Uncertainty evaluation in the differential measurements of power losses in a power drive system

Autori: M. Caruso, A.O. Di Tommaso, R. Miceli, C. Nevoloso, C. Spataro
Pubblicato in: Measurement, Numero 183, 2021, ISSN 0263-2241
Editore: Elsevier BV
DOI: 10.1016/j.measurement.2021.109795

Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices

Autori: F. Roccaforte, F. Giannazzo, Giuseppe Greco
Pubblicato in: Micro, 2022, ISSN 2673-8023
Editore: MDPI
DOI: 10.3390/micro2010002

Modelling the Elastic Energy of a Bifurcated Wafer: a Benchmark of the Analytical Solution vs. The ANSYS Finite Element Analysis

Autori: Vincenzo Vinciguerra, Giuseppe Luigi Malgioglio, Antonio Landi
Pubblicato in: Composite Structures, Numero 281, 2022, ISSN 0263-8223
Editore: Elsevier BV
DOI: 10.1016/j.compstruct.2021.114996

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Autori: M Vivona, G Greco, G Bellocchi, L Zumbo, S Di Franco, M Saggio, S Rascunà, F Roccaforte
Pubblicato in: Journal of Physics D: Applied Physics, Numero 54/5, 2021, Pagina/e 055101, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6463/abbd65

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Autori: P. Fiorenza, C. Bongiorno, F. Giannazzo, M.S. Alessandrino, A. Messina, M. Saggio, F. Roccaforte
Pubblicato in: Applied Surface Science, Numero 557, 2021, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2021.149752

Hybrid modelling and control of a class of power converters with triangular-carrier PWM inputs

Autori: C. Albea, A. Sferlazza, F. Gómez-Estern and F. Gordillo
Pubblicato in: IEEE, 2021, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2021.3126433

Control of power converters with hybrid affine models and pulse-width modulated inputs.

Autori: Carolina Albea; Antonino Sferlazza; Francisco Gordillo; Fabio Gómez-Estern
Pubblicato in: IEEE, 2021, ISSN 1549-8328
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tcsi.2021.3083900

Charge Trapping Mechanisms in Nitridated SiO2/4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry

Autori: P. Fiorenza, C. Bongiorno, A. Messina, M. Saggio, F. Giannazzo, F. Roccaforte
Pubblicato in: Materials Science Forum, 2022, ISSN 0255-5476
Editore: Trans Tech Publications Ltd
DOI: 10.4028/p-u08hm8

A general investigation on the differential leakage factor for symmetrical and asymmetrical multiphase winding design

Autori: Caruso, M.; Di Tommaso, A.O.; Marignetti, F.; Miceli, R. A
Pubblicato in: Energies, 2020, ISSN 1996-1073
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en13205414

Nonlinear Robust Control of a Quadratic Boost Converter in a Wide Operation Range, Based on Extended Linearization Method

Autori: Scirè, D.; Lullo, G.; Vitale, G.
Pubblicato in: Electronics, 2023, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics12030579

Impact Evaluation of Innovative Selective Harmonic Mitigation Algorithm for Cascaded H-Bridge Inverter on IPMSM Drive Application

Autori: G. Schettino, C. Nevoloso, R. Miceli, A. O. D. Tommaso and F. Viola,
Pubblicato in: IEEE, 2021, ISSN 2644-1241
Editore: IEEE
DOI: 10.1109/ojia.2021.3130288

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO 2 /4H-SiC MOSFETs

Autori: Patrick Fiorenza, Filippo Giannazzo, Salvatore Cascino, Mario Saggio, Fabrizio Roccaforte
Pubblicato in: Applied Physics Letters, Numero 117/10, 2020, Pagina/e 103502, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0012399

Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

Autori: Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Nicolò Zagni, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini
Pubblicato in: Electronics, Numero 10/4, 2021, Pagina/e 441, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics10040441

Stand-Alone Hybrid Power Plant Based on SiC Solar PV and Wind Inverters with Smart Spinning Reserve Management

Autori: Susana Martín-Arroyo, José Antonio Cebollero, Miguel García-Gracia, Álvaro Llamazares
Pubblicato in: Electronics, Numero 10/7, 2021, Pagina/e 796, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics10070796

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

Autori: P. Fiorenza, M.S. Alessandrino, B. Carbone, A. Russo, F. Roccaforte, F. Giannazzo
Pubblicato in: Nanomaterials, Numero 11, 2021, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano11061626

Multi-Objective Comparative Analysis of Active Modular Rectifier Architectures for a More Electric Aircraft

Autori: Unai Atutxa,Igor Baraia-Etxaburu,Víctor Manuel López,Fernando González-Hernando, Alejandro Rujas
Pubblicato in: AEROSPACE, 2021, ISSN 2226-4310
Editore: MDPI
DOI: 10.3390/aerospace9020098

Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Autori: M. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte
Pubblicato in: Materials Science in Semiconductor Processing, Numero 93, 2019, Pagina/e 274-279, ISSN 1369-8001
Editore: Pergamon Press
DOI: 10.1016/j.mssp.2019.01.019

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Autori: Monia Spera, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo, Fabrizio Roccaforte
Pubblicato in: Materials, Numero 12/21, 2019, Pagina/e 3468, ISSN 1996-1944
Editore: MDPI Open Access Publishing
DOI: 10.3390/ma12213468

Nonlinear Robust Control of a Quadratic Boost Converter in a Wide Operation Range, Based on Extended Linearization Method

Autori: Alonge, F.; Busacca, A.; Calabretta, M.; D’Ippolito, F.; Fagiolini, A.; Garraffa, G.; Messina, A.A.; Sferlazza, A.; Stivala, S.
Pubblicato in: Electronics, 2022, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics11152336

Dual-Mode Stable Performance Phase-Shifted Full-Bridge Converter for Wide-Input and Medium-Power Applications

Autori: M. Abu Bakar, M. Farhan Alam, Abdul Majid, Kent Bertilsson
Pubblicato in: IEEE Transactions on Power Electronics, Numero 36/6, 2021, Pagina/e 6375-6388, ISSN 0885-8993
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tpel.2020.3033386

Switching Frequency Effects on the Efficiency and Harmonic Distortion in a Three-Phase Five-Level CHBMI Prototype with Multicarrier PWM Schemes: Experimental Analysis

Autori: Busacca, A.; Di Tommaso, A.O.; Miceli, R.; Nevoloso, C.; Schettino, G.; Scaglione, G.; Viola, F.; Colak, I.
Pubblicato in: Energies, 2022, ISSN 1996-1073
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en15020586

A Modified Higher Operational Duty Phase Shifted Full Bridge Converter for Reduced Circulation Current

Autori: Muhammad Abu Bakar, Kent Bertilsson
Pubblicato in: IEEE Open Journal of the Industrial Electronics Society, Numero 1, 2020, Pagina/e 82-96, ISSN 2644-1284
Editore: IEEE
DOI: 10.1109/ojies.2020.2994142

Magnetic Design of a 3-Phase SiC-Based PV Inverter With DC-Link Referenced Output Filter

Autori: A. Rujas, I. Landaburu, V. M. Lopez-Martin and O. Barambones
Pubblicato in: IEEE, 2023, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2023.3254887

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Autori: P Fiorenza, M S Alessandrino, B Carbone, C Di Martino, A Russo, M Saggio, C Venuto, E Zanetti, F Giannazzo, F Roccaforte
Pubblicato in: Nanotechnology, Numero 31/12, 2020, Pagina/e 125203, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/ab5ff6

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

Autori: Patrick Fiorenza, Mario Alessandrino, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Edoardo Zanetti, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte
Pubblicato in: Materials Science Forum, Numero 1004, 2020, Pagina/e 433-438, ISSN 1662-9752
Editore: Scientific.Net
DOI: 10.4028/www.scientific.net/msf.1004.433

Battery Models for Battery Powered Applications: A Comparative Study

Autori: Nicola Campagna, Vincenzo Castiglia, Rosario Miceli, Rosa Anna Mastromauro, Ciro Spataro, Marco Trapanese, Fabio Viola
Pubblicato in: Energies, Numero 13/16, 2020, Pagina/e 4085, ISSN 1996-1073
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/en13164085

Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures

Autori: M. Vivona, G. Bellocchi, R. Lo Nigro, S. Rascunà, F. Roccaforte
Pubblicato in: Semicond. Sci. Technol., 2022, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6641/ac3375

Ni/Heavily-Doped 4H-SiC Schottky Contacts

Autori: M. Vivona, G. Greco, S. Di Franco, P. Fiorenza, F. Giannazzo, A. La Magna, F. Roccaforte
Pubblicato in: Materials Science Forum, 2022, ISSN 0255-5476
Editore: Trans Tech Publications Ltd
DOI: 10.4028/p-ia5ez8

The influence of the rapid thermal annealing process on defect distribution in GaAsN Schottky diodes.

Autori: KÓSA, Arpád - DAWIDOWSKI, Wojciech - SCIANA, Beata - CHVÁLA, Aleš - STUCHLÍKOVÁ, Ľubica
Pubblicato in: SURFINT - SREN VII, 2021
Editore: Comenius University

Educational Game About Power MOS Transistors

Autori: Bachelor Thesis
Pubblicato in: 2020
Editore: Slovak University of Technology in Bratislava

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