Periodic Reporting for period 1 - ENUF (Evaluation of Novel Ultra-Fast selective III-V Epitaxy)
Período documentado: 2019-01-01 hasta 2020-12-31
The aim of ENUF is to combine two different growth methods to achieve a low-cost integration of compound semiconductors on a silicon platform, and to establish this as an alternative technology for existing compound semiconductor wafer production and to enable low-cost integration of optically active material as enabling technology for silicon photonics applications. UCA works on Hydride Vapor Phase Epitaxy (HVPE), which is a near-equilibrium process capable of growing III-V epitaxial layers (both bulk and nanostructures) with high growth rates and utmost selectivity on patterned substrates. In this proposal, we are combining it with the technique Template Assisted Selective Epitaxy (TASE) developed at IBM to achieve the best of both worlds.