Evaluation of Novel Ultra-Fast selective III-V Epitaxy

Informacje na temat projektu

ENUF

Identyfikator umowy o grant: 813021

DOI

10.3030/813021

Projekt został zamknięty

Data podpisania przez KE 7 Grudnia 2018

Data rozpoczęcia 1 Stycznia 2019

Data zakończenia 31 Grudnia 2020

Finansowanie w ramach

• EXCELLENT SCIENCE - European Research Council (ERC)

Koszt całkowity

€ 150 000,00

Wkład UE

€ 150 000,00

Koordynowany przez

IBM RESEARCH GMBH
Switzerland

Periodic Reporting for period 1 - ENUF (Evaluation of Novel Ultra-Fast selective III-V Epitaxy)

Okres sprawozdawczy: 2019-01-01 do 2020-12-31

Podsumowanie kontekstu i ogólnych celów projektu

The aim of ENUF is to combine two different growth methods to achieve a low-cost integration of compound semiconductors on a silicon platform, and to establish this as an alternative technology for existing compound semiconductor wafer production and to enable low-cost integration of optically active material as enabling technology for silicon photonics applications. UCA works on Hydride Vapor Phase Epitaxy (HVPE), which is a near-equilibrium process capable of growing III-V epitaxial layers (both bulk and nanostructures) with high growth rates and utmost selectivity on patterned substrates. In this proposal, we are combining it with the technique Template Assisted Selective Epitaxy (TASE) developed at IBM to achieve the best of both worlds.