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Integrated Qubits Towards Future High-Temperature Silicon Quantum Computing Hardware Technologies

Objective

The objectives of the interdisciplinary project IQubits are to (i) develop and demonstrate experimentally high-temperature (high-T) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm Fully-Depleted Silicon-on-Insulator (FDSOI) CMOS foundry technology as the enabling fundamental building blocks of quantum computing technologies, (ii) verify the scalability of these qubits to 10nm dimensions through fabrication experiments and (iii) prove through atomistic simulations that, at 2nm dimensions, they are suitable for 300K operation. The proposed 22nm FDSOI qubit ICs consist of coupled quantum-dot electron and hole spin qubits, placed in the atomic-scale channel of multi-gate n- and p-MOSFETs, and of 60-240GHz spin control/readout circuits integrated on the same die in state-of-the-art FDSOI CMOS foundry technology. To assess the impact of future CMOS scaling, more aggressively scaled Si-channel SOI and nitride-channel qubit structures will also be designed and fabricated in two experimental processes with 10nm gate half pitch. The latter will be developed in this project. The plan is for the III-nitrides (III-N) qubits to be ultimately grown on a SOI wafer, to be compatible with CMOS. Because of their larger bandgap, III-N hold a better prospect than Si and SiGe for qubits with larger coupling energy and mode energy splitting, and 300K operation. As a radical breakthrough, the fabricated qubits will feature coupling energies on the order of 0.25-1 meV corresponding to control frequencies in the 60-240GHz range, suitable for operation at 3–12 degrees Kelvin, two orders of magnitude higher than today's qubits. The tuned mm-wave circuits allow for 10-20ps spin control pulses which help to filter out wideband thermal noise and largely enhance the ratio between the gating and the decoherence times. Thermal noise filtering and fast control of the spin may lead to even higher temperature operation for a given energy-level splitting.

Call for proposal

H2020-FETOPEN-2018-2020

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Sub call

H2020-FETOPEN-2018-2019-2020-01

Coordinator

AARHUS UNIVERSITET
Net EU contribution
€ 788 625,00
Address
Nordre Ringgade 1
8000 Aarhus C
Denmark

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Region
Danmark Midtjylland Østjylland
Activity type
Higher or Secondary Education Establishments
Non-EU contribution
€ 143 622,50

Participants (6)

CONSIGLIO NAZIONALE DELLE RICERCHE
Italy
Net EU contribution
€ 400 000,00
Address
Piazzale Aldo Moro 7
00185 Roma

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Region
Centro (IT) Lazio Roma
Activity type
Research Organisations
Non-EU contribution
€ 0,00
THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
Canada
Net EU contribution
€ 0,00
Address
Kings College Circle 27
M5S 1A1 Toronto

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Activity type
Higher or Secondary Education Establishments
Non-EU contribution
€ 468 332,50
IDRYMA TECHNOLOGIAS KAI EREVNAS
Greece
Net EU contribution
€ 700 000,00
Address
N Plastira Str 100
70013 Irakleio

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Region
Ηράκλειο Κρήτη Νησιά Αιγαίου
Activity type
Research Organisations
Non-EU contribution
€ 0,00
INSTITUTUL NATIONAL DE CERCETAREDEZVOLTARE PENTRU MICROTEHNOLOGIE
Romania
Net EU contribution
€ 498 250,00
Address
Erou Iancu Nicolae Street 32b
077190 Voluntari

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Region
Macroregiunea Trei Bucureşti-Ilfov Ilfov
Activity type
Research Organisations
Non-EU contribution
€ 0,00
MDLAB SRL

Participation ended

Italy
Net EU contribution
€ 0,00
Address
Via Sicilia 31
42122 Reggio Emilia

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SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Region
Nord-Est Emilia-Romagna Reggio nell’Emilia
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Non-EU contribution
€ 0,00
APPLIED MATERIALS ITALIA SRL
Italy
Net EU contribution
€ 301 500,00
Address
Via Postumia Ovest 244
31048 San Bagio Di Callalta

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Region
Nord-Est Veneto Treviso
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Non-EU contribution
€ 24 000,00