Integrated Qubits Towards Future High-Temperature Silicon Quantum Computing Hardware Technologies

Project Information

IQubits

Grant agreement ID: 829005

DOI 10.3030/829005

Project closed

EC signature date 17 December 2018

Start date 1 January 2019

End date 30 April 2024

Funded under

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Total cost € 3 180 707,50

EU contribution € 2 688 375,00

Coordinated by

AKADEMIA GORNICZO-HUTNICZA IM. STANISLAWA STASZICA W KRAKOWIE
Poland

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Deliverables

Documents, reports (17)

Nanofabrication process optimization 2

Final report on design and optimisation of the nanofabrication processes for the fabrication of the IIIN heterostructure qubits

DC-220GHz 300&4K Si/III-N qubit tests 2

Interim report on tests of the 10nm Si and IIIN qubits at the frequencies DC220GHz and temperatures 312K and 300 K

III-N structures decoherence processes 1

Report 1 on decoherence processes of 10nm III-N heteronanostructure qubits.

Dissemination and exploitation plan 3

Report on dissemination and exploitation plan 3

DC-220GHz 300&4K FDSOI qubit tests 1

Report on tests of FDSOI qubits and ICs version 1 at the frequencies DC220GHz and temperatures 312K and 300 K

Epitaxy and III-N/FDSOI integration

Report on epitaxy optimization and III-N qubits integration with FDSOI CMOS technology.

Si and III-N 10nm qubit fabrication

Report on fabrication of Si and III-N 10nm qubits.

III-N SET temperature characterisation

Report on experimental characterization of III-N SET structures versus temperature.

Qubit optimization

Report on qubit optimization, quantum gate and readout fidelity.

Dissemination and exploitation plan 1

Report on dissemination and exploitation plan 1

III-N structures decoherence processes 2

Report 2 on decoherence processes in 10nm III-N heteronanostructure qubits.

Nanofabrication process optimization 1

Interim report on design and optimisation of the nanofabrication processes for the fabrication of the III-N heterostructure qubits.

Tunneling and spin-orbit coupling

Report on tailoring spin-orbit coupling and internet tunneling (k p modelling).

DC-220GHz 300&4K Si/III-N qubit tests 4

Final report on tests of 10nm Si and III-N qubits at the frequencies DC-220GHz and temperatures 3-12K, and 300 K.

Dissemination and exploitation plan 2

Report on dissemination and exploitation plan 2

Gate width and channel width reduction

Report on progress M30 on gate width and channel width reductions for the fabrication of the 10nm qubits

DC-220GHz 300&4K FDSOI qubit tests 3

Report on tests of FDSOI qubits and ICs version 2 at the frequencies DC-220GHz and temperatures 3-12K, and 300 K.

Demonstrators, pilots, prototypes (2)

Cryogenic measurement set-up (to 140 GHz & 4 K)

Arrangement of the cryogenic measurement set-up for S-parameters up to the frequency of 140 GHz and down to the temperature of 4 K.

Cryogenic measurement set-up (to 110 GHz &4 K)

Arrangement of the cryogenic measurement setup for Sparameters up to the frequency of 110 GHz and down to the temperature of 4 K

Websites, patent fillings, videos etc. (1)

Website and logo

Report on project website and logo.

Publications

Conference proceedings (11)

A Compact TIA in 22nm FDSOI CMOS for Qubit Readout in Monolithic Quantum Processors

Author(s): D. Zito and T. D. Nhut
Published in: IEEE International Conference on Electronics, Circuits and Systems (ICECS) 2023, Issue 4-7 Dec. 2023, 2023, Page(s) pp. 1-4, ISBN 979-8-3503-2649-9
Publisher: IEEE
DOI: 10.1109/icecs58634.2023.10382853

Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics

Author(s): S. Pati Tripathi, S. Bonen, C. Nastase, S. Iordănescu, G. Boldeiu, M. Păşteanu, A. Müller, S. P. Voinigescu
Published in: ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021
Publisher: IEEE
DOI: 10.1109/esscirc53450.2021.9567759

Sub-mW 30GHz Variable-Gain LNA in 22nm FDSOI CMOS for Low-Power Tapered mm-Wave 5G/6G Phased-Array Receivers

Author(s): M. Spasaro and D. Zito
Published in: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Issue 19-24 June 2022, 2022, Page(s) 723-726, ISBN 978-1-6654-9613-1
Publisher: IEEE
DOI: 10.1109/ims37962.2022.9865340

Cryogenic Compact Low-Power 60GHz Amplifier for Spin Qubit Control in Monolithic Silicon Quantum Processors

Author(s): M. Spasaro, S. Bonen, G. Cooke, T. Jager, T. D. Nhut, D. Sufrà, S. P. Voinigescu, and D. Zito
Published in: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Issue 19-24 June 2022, 2022, Page(s) 164-168, ISBN 978-1-6654-9613-1
Publisher: IEEE
DOI: 10.1109/ims37962.2022.9865561

A DC to 220 GHz High-Isolation SPST Switch in 22nm FDSOI CMOS

Author(s): L. Wu, H. Y. Hsu, and S.P. Voinigescu
Published in: IEEE International Microwave Symposium 2021, 2021
Publisher: IEEE

Design Considerations for Spin Readout Amplifiers in Monolithically Integrated Semiconductor Quantum Processors

Author(s): M. J. Gong, U. Alakusu, S. Bonen, M. S. Dadash, L. Lucci, H. Jia, L. E. Gutierrez, W. T. Chen, D. R. Daughton, G.C. Adam, S. Iordanescu, M. Pasteanu, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, S. P. Voinigescu
Published in: 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, Page(s) 111-114, ISBN 978-1-7281-1701-0
Publisher: IEEE
DOI: 10.1109/rfic.2019.8701847

Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)

Author(s): Michele Spasaro, Domenico Zito
Published in: 2019 International Semiconductor Conference (CAS), 2019, Page(s) 11-20, ISBN 978-1-7281-1888-8
Publisher: IEEE
DOI: 10.1109/smicnd.2019.8923669

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS.

Author(s): R.R. Severino, M. Spasaro, D. Zito
Published in: 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020
Publisher: IEEE
DOI: 10.1109/iscas45731.2020.9180790

Engineering Solid-State Qubits Structures for High-Temperature Silicon Quantum Computing Through Multi-Scale Simulations

Author(s): Matteo Bina, Andrea Padovani, Luca Larcher
Published in: Italian Quantum Information Science Conference 2019, Milan, Italy, 2020
Publisher: MDPI

IQubits: An All-in-One Integrated Qubit Platform in Commercial Ultra-Scaled Silicon Foundry Technologies for Scalable Monolithic Quantum Processors

Author(s): D. Zito, S. Voinigescu, F. Troiani, E. Molinari, A. Muller, G. Konstantinidis, E. Iliopoulos, S. Dominici
Published in: European Quantum Technology Conference 2023, Issue 16-20 October 2023, 2023
Publisher: European Quantum Flagship
DOI: 10.15488/16649

Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors

Author(s): T. D. Nhut, S. Bonen, G. Cooke, T. Jager, M. Spasaro, D. Sufrà, S. P. Voinigescu, and D. Zito
Published in: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, Issue 19-24 June 2022, 2022, Page(s) 168-171, ISBN 978-1-6654-9613-1
Publisher: IEEE
DOI: 10.1109/ims37962.2022.9865577

Peer reviewed articles (21)

Theory of multidimensional quantum capacitance and its application to spin and charge discrimination in quantum dot arrays

Author(s): A. Secchi and F. Troiani
Published in: Phys. Rev. B, Issue Vol. 107, Iss. 15 — 15 April 2023, 2023, ISSN 2469-9969
Publisher: APS
DOI: 10.1103/physrevb.107.155411

CMOS integrated circuits for quantum information sciences

Author(s): 10. J. Andres, M. Babaie, J.C Bardin, I. Bashir, G. Billiot, E. Blokhina, S. Bonen, E. Charbon, J. Chiaverini, I.L. Chuang, C. Degenhardt, D. Englund, L. Geck, L. Le Guevel, D. Ham, R. Han, M.I. Ibrahim, D. Krüger, K. M. Lei, A. Morel, D. Nielinger, G. Pillonet, J. M. Sage, F. Sebastiano, R.B. Staszewski, J. Stuart, A. Vladimirescu, P. Vliex, and S.P. Voinigescu
Published in: IEEE Transactions on Quantum Engineering, Issue vol. 4, 2023, 2023, Page(s) 1-30, ISSN 2689-1808
Publisher: IEEE
DOI: 10.1109/tqe.2023.3290593

Envelope-function theory of inhomogeneous strain in semiconductor nanostructures

Author(s): A. Secchi and F. Troiani
Published in: Mesoscale and Nanoscale Physics, Issue Vol. 110, Is. 4, 15 July 2024, 2023, ISSN 2331-8422
Publisher: AxXiv
DOI: 10.48550/arxiv.2312.15967

A DC to 220-GHz High-Isolation SPST Switch in 22-nm FDSOI CMOS

Author(s): Lucy Wu, Hao Yun Hsu, Sorin P. Voinigescu
Published in: IEEE Microwave and Wireless Components Letters, 2021, ISSN 1558-1764
Publisher: IEEE
DOI: 10.1109/lmwc.2021.3067003

Quantum estimation and remote charge sensing with a hole-spin qubit in silicon

Author(s): G. Forghieri, A. Secchi, A. Bertoni, P. Bordone, and F. Troiani
Published in: Phys. Rev. Research, Issue Vol. 5, Is. 4, November - December 2023, 2023, ISSN 2643-1564
Publisher: APS
DOI: 10.1103/physrevresearch.5.043159

0.52-mW 30-GHz LNA in 22-nm FDSOI CMOS

Author(s): M. Spasaro and D. Zito
Published in: IEEE Transactions on Circuits and Systems II: Express Briefs, Issue vol. 70, no. 10, Oct. 2023, 2023, Page(s) 3752-3756, ISSN 1558-3791
Publisher: IEEE
DOI: 10.1109/tcsii.2023.3288354

155 GHz FMCW and Stepped-Frequency Carrier OFDM Radar Sensor Transceiver IC Featuring a PLL With <30 ns Settling Time and 40 fs rms Jitter

Author(s): Alireza Zandieh, Shai Bonen, M. Sadegh Dadash, Ming Jia Gong, Juergen Hasch, Sorin P. Voinigescu
Published in: IEEE Transactions on Microwave Theory and Techniques, 2021, ISSN 1557-9670
Publisher: IEEE
DOI: 10.1109/tmtt.2021.3094189

Cryogenic Characterization of the High-Frequency and Noise Performance of SiGe HBTs from DC to 70 GHz and Down to 2 K

Author(s): S. Bonen, G. Cooke, T. Jager, A. Bharadwaj, S. Pati Tripathi, D. Céli, P. Chevalier, P. Schvan, and S. P. Voinigescu
Published in: IEEE Microwave and Wireless Components Letters, Issue Vol. 32, N.6, 2022, Page(s) pp. 666-669, ISSN 1558-1764
Publisher: IEEE
DOI: 10.1109/lmwc.2022.3160716

Characterization and Modelling of Quantum Dot Behaviour in FDSOI Devices

Author(s): S. Pati Tripathi, S. Bonen, A. Bharadwaj, T. Jager, C. Nastase, S. Iordanescu, G. Boldeiu, A. Nicoloiu, M. Plateanu, A. Muller, and S. P. Voinigescu
Published in: IEEE Journal of the Electron Devices Society, Issue 18 May 2022, 2022, Page(s) 600 - 610, ISSN 2168-6734
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2022.3176205

Magnetic tuning of the tunnel coupling in an optically active quantum dot molecule

Author(s): F. Bopp, C.Cullip, C. Thalacker, M. Lienhart, J. Schall, N. Bart, F. Sbresny, K. Boos, S.Rodt, D. Reuter, A. Ludwig, A. D. Wieck, S. Reitzenstein, F.Troiani, G. Goldoni, E. Molinari, K. Müller, J. J. Finley,
Published in: Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Issue 2023, 2023, ISSN 2331-8422
Publisher: ArXiv
DOI: 10.48550/arxiv.2303.12552

A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS

Author(s): T. Doan Nhut and D. Zito
Published in: IEEE Transactions on Circuits and Systems II: Express Briefs, Issue vol. 70, no. 10, Oct. 2023, 2023, Page(s) 3812-3816, ISSN 1558-3791
Publisher: IEEE
DOI: 10.1109/tcsii.2023.3291081

Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture

Author(s): Andrea Secchi, Laura Bellentani, Andrea Bertoni, and Filippo Troiani
Published in: Physical Review B, 2021, ISSN 2469-9969
Publisher: American Physical Society
DOI: 10.1103/physrevb.104.035302

Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

Author(s): S. Bonen, U. Alakusu, Y. Duan, M. J. Gong, M. S. Dadash, L. Lucci, D. R. Daughton, G. C. Adam, S. Iordanescu, M. Pasteanu, I. Giangu, H. Jia, L. E. Gutierrez, W. T. Chen, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, P. Asbeck, S. P. Voinigescu
Published in: IEEE Electron Device Letters, 2019, Page(s) 1-1, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2880303

Manipulation of spin cluster qubits by electric field induced modulation of exchange coupling, g -factor, and axial anisotropy

Author(s): Filippo Troiani
Published in: Physical Review B, Issue 100/15, 2019, ISSN 2469-9950
Publisher: American Physical
DOI: 10.1103/PhysRevB.100.155424

A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain

Author(s): Utku Alakusu, M. Sadegh Dadash, Stefan Shopov, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu
Published in: IEEE Microwave and Wireless Components Letters, Issue 30/1, 2020, Page(s) 50-53, ISSN 1531-1309
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2019.2954036

De la dispozitive semiconductoare convenționale la tranzistoare și circuite pentru quantum computing (1990-2020)

Author(s): Alexandru Müller; Alexandra Nicoloiu
Published in: Academica – Romanian Academy Journal, 2020, ISSN 1454-9069
Publisher: Academica – Romanian Academy Journal

Investigation of <i>p</i>- and <i>n</i>-Type Quantum Dot Arrays Manufactured in 22nm FDSOI CMOS at 2-4 K and 300 K

Author(s): Shai Bonen, Suyash Pati Tripathi, Julie McIntosh, Thomas Jager, Sorin P. Voinigescu
Published in: IEEE Electron Device Letters, Issue IEEE Electron Device Letters,, 2024, Page(s) 1-1, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2024.3435380

Inter- and intra-band Coulomb interactions between holes in silicon nanostructures

Author(s): Andrea Secchi, Laura Bellentani, Andrea Bertoni, Filippo Troiani
Published in: Physical Review B, 2021, ISSN 2469-9969
Publisher: American Physical Society
DOI: 10.1103/physrevb.104.205409

High-Throughput Investigation of the Electron Transport Properties in Si₁-ₓGeₓ Alloys

Author(s): Bamidele Ibrahim Adetunji, Andrew Supka, Marco Fornari, Arrigo Calzolari
Published in: IEEE Access, 2021, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2021.3119898

Toward hole-spin qubits in Si p-MOSFETs within a planar CMOS foundry technology

Author(s): L. Bellentani, M. Bina, S. Bonen, A. Secchi, A. Bertoni, S. P. Voinigescu, A. Padovani, L. Larcher, and F. Troiani
Published in: Physical Review Applied, 2021, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/physrevapplied.16.054034

Multi-Dimensional Quantum Capacitance of the Two-Site Hubbard Model: The Role of Tunable Interdot Tunnelin

Author(s): A. Secchi and F. Troiani
Published in: Entropy, Issue Vol. 82, 2023, ISSN 1099-4300
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/e25010082

Other Research Products

Other Research Products via OpenAire (2)

Book of Abstracts for the European Quantum Technologies Conference (EQTC) 2023

Author(s): Quantum Valley Lower Saxony; Liebisch, Tara; Schnitger, Axel; Husemann, Rebecca
Published in: Hannover : Institutionelles Repositorium der Leibniz Universität Hannover

Magnetic tuning of the tunnel coupling in an optically active quantum dot molecule

Author(s): Bopp, Frederik; Cullip, Charlotte; Thalacker, Christopher; Lienhart, Michelle; Schall, Johannes; Bart, Nikolai; Sbresny, Friedrich; Boos, Katarina; Rodt, Sven; Reuter, Dirk; Ludwig, Arne; Wieck, Andreas D.; Reitzenstein, Stephan; Troiani, Filippo; Goldoni, Guido; Molinari, Elisa; Müller, Kai; Finley, Jonathan J.
Published in: arXiv