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Integrated Qubits Towards Future High-Temperature Silicon Quantum Computing Hardware Technologies

Deliverables

Nanofabrication process optimization 2

Final report on design and optimisation of the nanofabrication processes for the fabrication of the IIIN heterostructure qubits

DC-220GHz 300&4K Si/III-N qubit tests 2

Interim report on tests of the 10nm Si and IIIN qubits at the frequencies DC220GHz and temperatures 312K and 300 K

III-N structures decoherence processes 1

Report 1 on decoherence processes of 10nm III-N heteronanostructure qubits.

III-N structures decoherence processes 2

Report 2 on decoherence processes in 10nm IIIN heteronanostructure qubits

DC-220GHz 300&4K FDSOI qubit tests 1

Report on tests of FDSOI qubits and ICs version 1 at the frequencies DC220GHz and temperatures 312K and 300 K

Dissemination and exploitation plan 1

Report on dissemination and exploitation plan 1

Nanofabrication process optimization 1

Interim report on design and optimisation of the nanofabrication processes for the fabrication of the III-N heterostructure qubits.

Dissemination and exploitation plan 2

Report on dissemination and exploitation plan 2

Gate width and channel width reduction

Report on progress M30 on gate width and channel width reductions for the fabrication of the 10nm qubits

Cryogenic measurement set-up (to 110 GHz &4 K)

Arrangement of the cryogenic measurement setup for Sparameters up to the frequency of 110 GHz and down to the temperature of 4 K

Publications

Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics

Author(s): S. Pati Tripathi, S. Bonen, C. Nastase, S. Iordănescu, G. Boldeiu, M. Păşteanu, A. Müller, S. P. Voinigescu
Published in: ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021
Publisher: IEEE
DOI: 10.1109/esscirc53450.2021.9567759

A DC to 220 GHz High-Isolation SPST Switch in 22nm FDSOI CMOS

Author(s): L. Wu, H. Y. Hsu, and S.P. Voinigescu
Published in: IEEE International Microwave Symposium 2021, 2021
Publisher: IEEE

Design Considerations for Spin Readout Amplifiers in Monolithically Integrated Semiconductor Quantum Processors

Author(s): M. J. Gong, U. Alakusu, S. Bonen, M. S. Dadash, L. Lucci, H. Jia, L. E. Gutierrez, W. T. Chen, D. R. Daughton, G.C. Adam, S. Iordanescu, M. Pasteanu, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, S. P. Voinigescu
Published in: 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, Page(s) 111-114, ISBN 978-1-7281-1701-0
Publisher: IEEE
DOI: 10.1109/rfic.2019.8701847

Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)

Author(s): Michele Spasaro, Domenico Zito
Published in: 2019 International Semiconductor Conference (CAS), 2019, Page(s) 11-20, ISBN 978-1-7281-1888-8
Publisher: IEEE
DOI: 10.1109/smicnd.2019.8923669

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS.

Author(s): R.R. Severino, M. Spasaro, D. Zito
Published in: 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020
Publisher: IEEE
DOI: 10.1109/iscas45731.2020.9180790

Engineering Solid-State Qubits Structures for High-Temperature Silicon Quantum Computing Through Multi-Scale Simulations

Author(s): Matteo Bina, Andrea Padovani, Luca Larcher
Published in: Italian Quantum Information Science Conference 2019, Milan, Italy, 2020
Publisher: MDPI

A DC to 220-GHz High-Isolation SPST Switch in 22-nm FDSOI CMOS

Author(s): Lucy Wu, Hao Yun Hsu, Sorin P. Voinigescu
Published in: IEEE Microwave and Wireless Components Letters, 2021, ISSN 1558-1764
Publisher: IEEE
DOI: 10.1109/lmwc.2021.3067003

155 GHz FMCW and Stepped-Frequency Carrier OFDM Radar Sensor Transceiver IC Featuring a PLL With <30 ns Settling Time and 40 fs rms Jitter

Author(s): Alireza Zandieh, Shai Bonen, M. Sadegh Dadash, Ming Jia Gong, Juergen Hasch, Sorin P. Voinigescu
Published in: IEEE Transactions on Microwave Theory and Techniques, 2021, ISSN 1557-9670
Publisher: IEEE
DOI: 10.1109/tmtt.2021.3094189

Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture

Author(s): Andrea Secchi, Laura Bellentani, Andrea Bertoni, and Filippo Troiani
Published in: Physical Review B, 2021, ISSN 2469-9969
Publisher: American Physical Society
DOI: 10.1103/physrevb.104.035302

Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

Author(s): S. Bonen, U. Alakusu, Y. Duan, M. J. Gong, M. S. Dadash, L. Lucci, D. R. Daughton, G. C. Adam, S. Iordanescu, M. Pasteanu, I. Giangu, H. Jia, L. E. Gutierrez, W. T. Chen, N. Messaoudi, D. Harame, A. Muller, R. R. Mansour, P. Asbeck, S. P. Voinigescu
Published in: IEEE Electron Device Letters, 2019, Page(s) 1-1, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2018.2880303

Manipulation of spin cluster qubits by electric field induced modulation of exchange coupling, g -factor, and axial anisotropy

Author(s): Filippo Troiani
Published in: Physical Review B, 100/15, 2019, ISSN 2469-9950
Publisher: American Physical
DOI: 10.1103/PhysRevB.100.155424

A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain

Author(s): Utku Alakusu, M. Sadegh Dadash, Stefan Shopov, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu
Published in: IEEE Microwave and Wireless Components Letters, 30/1, 2020, Page(s) 50-53, ISSN 1531-1309
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2019.2954036

De la dispozitive semiconductoare convenționale la tranzistoare și circuite pentru quantum computing (1990-2020)

Author(s): Alexandru Müller; Alexandra Nicoloiu
Published in: Academica – Romanian Academy Journal, 2020, ISSN 1454-9069
Publisher: Academica – Romanian Academy Journal

Inter- and intra-band Coulomb interactions between holes in silicon nanostructures

Author(s): Andrea Secchi, Laura Bellentani, Andrea Bertoni, Filippo Troiani
Published in: Physical Review B, 2021, ISSN 2469-9969
Publisher: American Physical Society
DOI: 10.1103/physrevb.104.205409

High-Throughput Investigation of the Electron Transport Properties in Si₁-ₓGeₓ Alloys

Author(s): Bamidele Ibrahim Adetunji, Andrew Supka, Marco Fornari, Arrigo Calzolari
Published in: IEEE Access, 2021, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2021.3119898

Toward hole-spin qubits in Si p-MOSFETs within a planar CMOS foundry technology

Author(s): L. Bellentani, M. Bina, S. Bonen, A. Secchi, A. Bertoni, S. P. Voinigescu, A. Padovani, L. Larcher, and F. Troiani
Published in: Physical Review Applied, 2021, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/physrevapplied.16.054034