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Efficient and Robust Oxide Switching

Project description

Improved thin-film structures could render memristors more reliable

The amount of digital information produced globally is exploding. A whopping 90 % of the world’s data that existed in 2016 had been created in the previous two years alone. Non-volatile memory technology is key to efficiently storing and managing this data deluge, offering high speeds and reduced power consumption. Memristors, fundamental two-terminal circuit elements, have promising applications in non-volatile memory and neuromorphic computing. However, despite a decade of intense research efforts, lack of precise control of thin-film properties prevent them from being uniform and hinder their large-scale production. The EU-funded EROS project plans to engineer new forms of nanostructured oxide thin-films with improved resistive switching behaviour. Improved thin-film structures will render oxide memristors more reliable and change the technology landscape in artificial intelligence and security.

Call for proposal

ERC-2019-ADG
See other projects for this call

Funding Scheme

ERC-ADG - Advanced Grant

Host institution

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
Address
Trinity Lane The Old Schools
CB2 1TN Cambridge
United Kingdom
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 1 913 521

Beneficiaries (1)

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
United Kingdom
EU contribution
€ 1 913 521
Address
Trinity Lane The Old Schools
CB2 1TN Cambridge
Activity type
Higher or Secondary Education Establishments