Improved thin-film structures could render memristors more reliable
The amount of digital information produced globally is exploding. A whopping 90 % of the world’s data that existed in 2016 had been created in the previous two years alone. Non-volatile memory technology is key to efficiently storing and managing this data deluge, offering high speeds and reduced power consumption. Memristors, fundamental two-terminal circuit elements, have promising applications in non-volatile memory and neuromorphic computing. However, despite a decade of intense research efforts, lack of precise control of thin-film properties prevent them from being uniform and hinder their large-scale production. The EU-funded EROS project plans to engineer new forms of nanostructured oxide thin-films with improved resistive switching behaviour. Improved thin-film structures will render oxide memristors more reliable and change the technology landscape in artificial intelligence and security.
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