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Efficient and Robust Oxide Switching

Project description

Improved thin-film structures could render memristors more reliable

The amount of digital information produced globally is exploding. A whopping 90 % of the world’s data that existed in 2016 had been created in the previous two years alone. Non-volatile memory technology is key to efficiently storing and managing this data deluge, offering high speeds and reduced power consumption. Memristors, fundamental two-terminal circuit elements, have promising applications in non-volatile memory and neuromorphic computing. However, despite a decade of intense research efforts, lack of precise control of thin-film properties prevent them from being uniform and hinder their large-scale production. The EU-funded EROS project plans to engineer new forms of nanostructured oxide thin-films with improved resistive switching behaviour. Improved thin-film structures will render oxide memristors more reliable and change the technology landscape in artificial intelligence and security.

Host institution

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
Net EU contribution
€ 1 913 521,00
Address
Trinity Lane The Old Schools
CB2 1TN Cambridge
United Kingdom

See on map

Region
East of England East Anglia Cambridgeshire CC
Activity type
Higher or Secondary Education Establishments
Other funding
€ 1 913 521,00

Beneficiaries (1)

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
United Kingdom
Net EU contribution
€ 1 913 521,00
Address
Trinity Lane The Old Schools
CB2 1TN Cambridge

See on map

Region
East of England East Anglia Cambridgeshire CC
Activity type
Higher or Secondary Education Establishments
Other funding
€ 1 913 521,00