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Automated inspection tool to unveil defects in raw Silicon Carbide crystals.

Project description

New tool to assess crystal defects in silicon carbide

Silicon carbide is a semiconductor base material that consists of pure silicon and pure carbon. Its properties are particularly well-suited for a variety of power components and devices used in electric vehicles, renewable energy and various industrial applications. It can withstand substantially higher voltages, frequencies and temperatures than typical silicon. However, the commercialisation of many electronic devices based on silicon carbide has been challenging due to the presence of a wide variety of defects. The EU-funded SiC_Scope project plans to develop an automated inspection tool to enable manufacturers to assess the defects of silicon carbide crystals before they enter the costly processing phase. The new tool will help semiconductor manufacturers improve the crystals' growth process and quality.

Field of science

  • /natural sciences/physical sciences/electromagnetism and electronics/electrical conductivity/semiconductor
  • /engineering and technology/electrical engineering, electronic engineering, information engineering/electrical engineering/electric energy
  • /engineering and technology/materials engineering/crystals
  • /social sciences/social and economic geography/transport/electric vehicles
  • /natural sciences/chemical sciences/inorganic chemistry/inorganic compounds

Call for proposal

See other projects for this call

Funding Scheme

MSCA-IF-EF-SE - Society and Enterprise panel


8, Chemin Des Allinges
1006 Lausanne
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
EU contribution
€ 203 149,44