Cryogenic III-V electronics for improved quantum computers

Informazioni relative al progetto

CELESTE

ID dell’accordo di sovvenzione: 898125

DOI

10.3030/898125

Progetto chiuso

Data della firma CE 24 Aprile 2020

Data di avvio 1 Febbraio 2021

Data di completamento 19 Luglio 2023

Finanziato da

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Costo totale

€ 203 149,44

Contributo UE

€ 203 149,44

Coordinato da

IBM RESEARCH GMBH
Switzerland

Periodic Reporting for period 1 - CELESTE (Cryogenic III-V electronics for improved quantum computers)

Periodo di rendicontazione: 2021-02-01 al 2023-01-31

Sintesi del contesto e degli obiettivi generali del progetto

The project aims to improve the scalability of quantum computers by developing quantum-tailored cryogenic RF electronics. The overall objectives target the needs of quantum computers in the qubit readout which requires low noise at microwave frequencies and sub-mW ultra-low power consumption. To address this, we performed the design and fabrication of cryogenic quantum-well transistors and RF switches and multiplexers based on III-V transistor technology which leverages unique cryogenic effects to surpass the performance of traditional technologies.

Lavoro eseguito dall’inizio del progetto fino alla fine del periodo coperto dalla relazione e principali risultati finora ottenuti

1. Cryogenic InGaAs HEMT with tensile Ohmic contacts - In this work, we have investigated the tensile Ohmic contact in terms of reducing the parasitic source and drain resistances. The results will be published at IEDM 2023 conference proceeding.
2. Self-heating effects - We have investigated the self-heating in the active region with a gate thermometry. In addition, the heat spread adjacent to the active transistors was also investigated with sensing devices.
3. Cryogenic multiplexer and switches - We demonstrated cryogenic switching devices based on III-V HEMT technology for scalable quantum computer control and readout signal routing. This work showed advantages of HEMT-based switching circuits over Si CMOS at cryogenic temperatures for future high-density ultra-low power quantum computer signal routing.

Progressi oltre lo stato dell’arte e potenziale impatto previsto (incluso l’impatto socioeconomico e le implicazioni sociali più ampie del progetto fino ad ora)

The impact of a mature quantum computing technology on society is expected to be tremendous, but there are many hurdles to overcome for up-scaling systems. To control and readout large numbers of physical qubits, cryogenic electronics may be necessary to reduce system cost and cabling as well as increase speed. One of the limitations of the design and integration of cryogenic electronics is the power consumption due to the limited cooling power available in the cryostat.
III-V HEMTs are already used in qubit readout LNAs due to their low power and low noise due to high electron mobilities at cryogenic temperatures. This project further demonstrated the scalability of quantum computers by cryogenic RF III-V electronics by a reduction of parasitic resistances with tensile strain Ohmic contacts which would impact future ultra-low power LNAs. In addition, we achieved multiplexing and switches based on the InGaAs HEMT platform which would enable dense and close integration with qubits since the circuits exhibited extremely low power, low charge injection, and fast switching.

IEDM 2023 presentation- benchmarking of the results with other cryogenic low-noise InGaAs HEMETs.