Deliverables Websites, patent fillings, videos etc. (3) Transparent cost structure Establishment of a transparent cost structure based on the processing results and yields achieved in WP1 WP2 and WP3 in order to be able to evaluate the costs of the MPW runs This will also address prospects financial viability and integration of the 2DEPL with EUROPRACTICE Single entry-point web portal Develop an embedded section on the grapheneflaghsipeu fully dedicated to the 2DEPL The subpage shall be visible from the landing page and have a primary positioning to reach the industry sector Set-up of an Industrial advisory board First meeting of the Industrial Advisory board Roles tasks and procedure agreed and validated by IAB Documents, reports (7) Report on received requests year 2 Report on customer requests sector reasons for rejections customer type GF GF AMs other European other nonEuropean costs including feedback from serviced customers and rejected customers A confidential annex will include detailed information about customers Evaluation and adaptation of access policy and procedures Report on the evaluation of the access policy to the pilot line Based on customer feedback and internal user friendliness the access procedure will be adapted and rolled out Fact sheet for the MPW runs The deliverable will summarise the key parameters boundary conditions and material stack for the planned MPW runs It will form the basis for informing the customers on the MPW runs and for setting up the official fact sheet Protocol for characterisation Protocol for chemical electrical and structural characterization regarding residual doping mobility hysteresis stability and contact resistance to allow comparative numerical characterization and optimization of the transfer cleaning dielectrics and contacting methods developed in tasks 31 34 by all the partners Compare wafer scale single crystalline to polycrystalline The 2DEPL will test the waferscale transferred crystalline graphene and compare its performance to large area film of transferred polycrystalline graphene The device performance design flexibility reliability scalability and total cost of ownership will be independently evaluated and assessed by a subcontractor of the 2DEPL as well as the 2DEPL Industrial Advisory Board Once this approach results in a better device performance than polycrystalline graphene on a given wafer size 200 or 300 mm its inclusion in the 2DEPL will be pursued provided that it is competitive in comparison to polycrystalline graphene in terms of design flexibility reliability and scalable at commercially justifiable costs considering total cost of ownership Report on received requests year 1 Report on customer requests sector reasons for rejections customer type GF GF AMs other European other nonEuropean costs including feedback from serviced customers and rejected customers A confidential annex will include detailed information about customers Dissemination and communication plan CUT will prepare a dissemination and communication plan for the 2DEPL Publications Peer reviewed articles (12) Plasma enhanced atomic layer etching of high-k layers on WS2 Author(s): J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke, and S. De Gendt Published in: Journal of Vacuum Science & Technology, Issue 15208559, 2022, ISSN 1520-8559 Publisher: AIP Publishing LLC DOI: 10.1116/6.0001726 Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene Author(s): R. Lukose, M. Lisker, F. Akhtar, M. Fraschke, T. Grabolla, A. Mai, M. Lukosius Published in: Scientific Reports, Issue 11/1, 2021, ISSN 2045-2322 Publisher: Nature Publishing Group DOI: 10.1038/s41598-021-92432-4 Reliable metal–graphene contact formation process flows in a CMOS-compatible environment Author(s): M. Elviretti, M. Lisker, R. Lukose, M. Lukosius, F. Akhtara, A. Maiab Published in: Nanoscale Advances, Issue 25160230, 2022, ISSN 2516-0230 Publisher: The Royal Society of Chemistry DOI: 10.1039/d2na00351a Graphene-Based Microwave Circuits: A Review Author(s): Mohamed Saeed,Paula Palacios,Muh-Dey Wei,Eyyub Baskent,Chun-Yu Fan,Burkay Uzlu,Kun-Ta Wang,Andreas Hemmetter,Zhenxing Wang,Daniel Neumaier,Max C. Lemme,Renato Negra Published in: Advanced Materials, Issue 15214095, 2021, ISSN 1521-4095 Publisher: Wiley DOI: 10.1002/adma.202108473 Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates Author(s): Eros Reato,Paula Palacios,Burkay Uzlu,Mohamed Saeed,Annika Grundmann,Zhenyu Wang,Daniel S. Schneider,Zhenxing Wang,Michael Heuken,Holger Kalisch,Andrei Vescan,Alexandra Radenovic,Andras Kis,Daniel Neumaier,Renato Negra,Max C. Lemme Published in: Advanced Materials, Issue 15214095, 2022, ISSN 1521-4095 Publisher: Wiley DOI: 10.1002/adma.202108469 Plasma‐Enhanced Atomic Layer Deposition of Al 2 O 3 on Graphene Using Monolayer hBN as Interfacial Layer Author(s): Bárbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O'Mahony, Harm C. M. Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme, Daniel Neumaier Published in: Advanced Materials Technologies, Issue 6/11, 2021, Page(s) 2100489, ISSN 2365-709X Publisher: Wiley DOI: 10.1002/admt.202100489 Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics Author(s): Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu, Mohamed Saeed, Ahmed Hamed, Satender Kataria, Renato Negra, Daniel Neumaier, Max C. Lemme Published in: Advanced Electronic Materials, Issue 7/7, 2021, Page(s) 2001210, ISSN 2199-160X Publisher: Wiley DOI: 10.1002/aelm.202001210 Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN Author(s): Agata Piacentini,Damiano Marian,Daniel S. Schneider,Enrique González Marín,Zhenyu Wang,Martin Otto,Bárbara Canto,Aleksandra Radenovic,Andras Kis,Gianluca Fiori,Max C. Lemme,Daniel Neumaier Published in: Advanced Electronic Materials, Issue 2199160X, 2022, ISSN 2199-160X Publisher: Wiley DOI: 10.1002/aelm.202200123 AFM-Based Hamaker Constant Determination with Blind Tip Reconstruction Author(s): Benny Ku,Ferdinandus van de Wetering,Jens Bolten,Bart Stel,Mark A. van de Kerkhof,Max C. Lemme Published in: Advanced Materials Technologies, Issue 2365709X, 2022, ISSN 2365-709X Publisher: Wiley DOI: 10.1002/admt.202200411 Large-area integration of two-dimensional materials and their heterostructures by wafer bonding Author(s): Arne Quellmalz, Xiaojing Wang, Simon Sawallich, Burkay Uzlu, Martin Otto, Stefan Wagner, Zhenxing Wang, Maximilian Prechtl, Oliver Hartwig, Siwei Luo, Georg S. Duesberg, Max C. Lemme, Kristinn B. Gylfason, Niclas Roxhed, Göran Stemme, Frank Niklaus Published in: Nature Communications, Issue 12/1, 2021, ISSN 2041-1723 Publisher: Nature Publishing Group DOI: 10.1038/s41467-021-21136-0 2D materials for future heterogeneous electronics Author(s): Max C. Lemme, Deji Akinwande, Cedric Huyghebaert & Christoph Stampfer Published in: Nature Communications, Issue 20411723, 2022, ISSN 2041-1723 Publisher: Nature Publishing Group DOI: 10.1038/s41467-022-29001-4 How to report and benchmark emerging field-effect transistors Author(s): Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin & Curt A. Richter Published in: Nature Electronics, Issue 25201131, 2022, ISSN 2520-1131 Publisher: Nature Publishing Group DOI: 10.1038/s41928-022-00798-8 Conference proceedings (4) High yield and process uniformity for 300 mm integrated WS2 FETs Author(s): T.Schram, Q.Smets, D.Radisic, B.Groven, A.Thiam, W.Li, E.Dupuy,K.Vandersmissen, T.Maurice, I.Asselberghs & I.Radu Published in: 2021 Symposium on VLSI Technology, 2021 Publisher: IEEE Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB Author(s): Quentin Smets; Tom Schram; Devin Verreck; Daire Cott; Benjamin Groven; Zubair Ahmed; Ben Kaczer; Jerome Mitard; Xiangyu Wu; Souvik Kundu; Hans Mertens; Dunja Radisic; Arame Thiam; Waikin Li; Emmanuel Dupuy; Zheng Tao; Kevin Vandersmissen; Thibaut Maurice; Dennis Lin; Pierre Morin; Inge Asselberghs; Iuliana Radu Published in: 2021 IEEE International Electron Devices Meeting, 2021 Publisher: IEEE DOI: 10.1109/iedm19574.2021.9720517 Wafer scale integration of MX2 based NMOS only ring oscillators on 300 mm wafers Author(s): Tom Schram; Hikmet. Celiker; Quentin Smets; Inge Asselbergs; G. S. Kar, Kris Myny Published in: 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 2022 Publisher: IEEE DOI: 10.1109/snw56633.2022.9889048 Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening Author(s): Yuanyuan Shi; Benjamin Groven; Quentin Smets; Surajit Sutar; Sreetama Banerjee; Henry Medina; Xiangyu Wu; Cedric Huyghebaert; Steven Brems; Dennis Lin; Pierre Morin; Matty Caymax; Inge Asselberghs; Iuliana Radu Published in: 2021 IEEE International Electron Devices Meeting, 2021 Publisher: IEEE DOI: 10.1109/iedm19574.2021.9720676 Searching for OpenAIRE data... There was an error trying to search data from OpenAIRE No results available
