Graphene Flagship 2D Experimental Pilot Line

Risultati finali

Establishment of a transparent cost structure based on the processing results and yields achieved in WP1, WP2 and WP3 in order to be able to evaluate the costs of the MPW runs. This will also address prospects, financial viability and integration of the 2D-EPL with EUROPRACTICE.

Single entry-point web portal

Develop an embedded section on the graphene-flaghsip.eu fully dedicated to the 2D-EPL. The sub-page shall be visible from the landing page and have a primary positioning to reach the industry sector.

Set-up of an Industrial advisory board

First meeting of the Industrial Advisory board. Roles, tasks and procedure agreed and validated by IAB.

Report on received requests year 2

Report on customer requests (sector, reasons for rejections, customer type [GF, GF AMs, other European, other non-European], costs), including feedback from serviced customers and rejected customers. A confidential annex will include detailed information about customers.

Evaluation and adaptation of access policy and procedures

Report on the evaluation of the access policy to the pilot line. Based on customer feedback and internal user friendliness the access procedure will be adapted and rolled out.

Fact sheet for the MPW runs

The deliverable will summarise the key parameters, boundary conditions and material stack for the planned MPW runs. It will form the basis for informing the customers on the MPW runs and for setting up the official fact sheet.

Protocol for characterisation

Protocol for chemical, electrical and structural characterization regarding residual doping, mobility, hysteresis, stability and contact resistance, to allow comparative numerical characterization and optimization of the transfer, cleaning, dielectrics and contacting methods developed in tasks 3.1 - 3.4 by all the partners

Compare wafer scale single crystalline to polycrystalline

The 2D-EPL will test the wafer-scale transferred crystalline graphene and compare its performance to large area film of transferred polycrystalline graphene. The device performance, design flexibility, reliability, scalability and total cost of ownership will be independently evaluated and assessed by a sub-contractor of the 2D-EPL as well as the 2D-EPL Industrial Advisory Board. Once this approach results in a better device performance than polycrystalline graphene on a given wafer size (200 or 300 mm), its inclusion in the 2D-EPL will be pursued, provided that it is competitive in comparison to polycrystalline graphene in terms of design flexibility, reliability and scalable at commercially justifiable costs, considering total cost of ownership.

Report on received requests year 1

Report on customer requests (sector, reasons for rejections, customer type [GF, GF AMs, other European, other non-European], costs), including feedback from serviced customers and rejected customers. A confidential annex will include detailed information about customers.

Dissemination and communication plan

CUT will prepare a dissemination and communication plan for the 2D-EPL.

Pubblicazioni

Plasma enhanced atomic layer etching of high-k layers on WS2

Autori: J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke, and S. De Gendt
Pubblicato in: Journal of Vacuum Science & Technology, Numero 15208559, 2022, ISSN 1520-8559
Editore: AIP Publishing LLC
DOI: 10.1116/6.0001726

Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Autori: R. Lukose, M. Lisker, F. Akhtar, M. Fraschke, T. Grabolla, A. Mai, M. Lukosius
Pubblicato in: Scientific Reports, Numero 11/1, 2021, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-021-92432-4

Reliable metal–graphene contact formation process flows in a CMOS-compatible environment

Autori: M. Elviretti, M. Lisker, R. Lukose, M. Lukosius, F. Akhtara, A. Maiab
Pubblicato in: Nanoscale Advances, Numero 25160230, 2022, ISSN 2516-0230
Editore: The Royal Society of Chemistry
DOI: 10.1039/d2na00351a

Graphene-Based Microwave Circuits: A Review

Autori: Mohamed Saeed,Paula Palacios,Muh-Dey Wei,Eyyub Baskent,Chun-Yu Fan,Burkay Uzlu,Kun-Ta Wang,Andreas Hemmetter,Zhenxing Wang,Daniel Neumaier,Max C. Lemme,Renato Negra
Pubblicato in: Advanced Materials, Numero 15214095, 2021, ISSN 1521-4095
Editore: Wiley
DOI: 10.1002/adma.202108473

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates

Autori: Eros Reato,Paula Palacios,Burkay Uzlu,Mohamed Saeed,Annika Grundmann,Zhenyu Wang,Daniel S. Schneider,Zhenxing Wang,Michael Heuken,Holger Kalisch,Andrei Vescan,Alexandra Radenovic,Andras Kis,Daniel Neumaier,Renato Negra,Max C. Lemme
Pubblicato in: Advanced Materials, Numero 15214095, 2022, ISSN 1521-4095
Editore: Wiley
DOI: 10.1002/adma.202108469

Plasma‐Enhanced Atomic Layer Deposition of Al 2 O 3 on Graphene Using Monolayer hBN as Interfacial Layer

Autori: Bárbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O'Mahony, Harm C. M. Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme, Daniel Neumaier
Pubblicato in: Advanced Materials Technologies, Numero 6/11, 2021, Pagina/e 2100489, ISSN 2365-709X
Editore: Wiley
DOI: 10.1002/admt.202100489

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Autori: Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu, Mohamed Saeed, Ahmed Hamed, Satender Kataria, Renato Negra, Daniel Neumaier, Max C. Lemme
Pubblicato in: Advanced Electronic Materials, Numero 7/7, 2021, Pagina/e 2001210, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/aelm.202001210

Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN

Autori: Agata Piacentini,Damiano Marian,Daniel S. Schneider,Enrique González Marín,Zhenyu Wang,Martin Otto,Bárbara Canto,Aleksandra Radenovic,Andras Kis,Gianluca Fiori,Max C. Lemme,Daniel Neumaier
Pubblicato in: Advanced Electronic Materials, Numero 2199160X, 2022, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/aelm.202200123

AFM-Based Hamaker Constant Determination with Blind Tip Reconstruction

Autori: Benny Ku,Ferdinandus van de Wetering,Jens Bolten,Bart Stel,Mark A. van de Kerkhof,Max C. Lemme
Pubblicato in: Advanced Materials Technologies, Numero 2365709X, 2022, ISSN 2365-709X
Editore: Wiley
DOI: 10.1002/admt.202200411

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

Autori: Arne Quellmalz, Xiaojing Wang, Simon Sawallich, Burkay Uzlu, Martin Otto, Stefan Wagner, Zhenxing Wang, Maximilian Prechtl, Oliver Hartwig, Siwei Luo, Georg S. Duesberg, Max C. Lemme, Kristinn B. Gylfason, Niclas Roxhed, Göran Stemme, Frank Niklaus
Pubblicato in: Nature Communications, Numero 12/1, 2021, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-021-21136-0

2D materials for future heterogeneous electronics

Autori: Max C. Lemme, Deji Akinwande, Cedric Huyghebaert & Christoph Stampfer
Pubblicato in: Nature Communications, Numero 20411723, 2022, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-022-29001-4

How to report and benchmark emerging field-effect transistors

Autori: Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin & Curt A. Richter
Pubblicato in: Nature Electronics, Numero 25201131, 2022, ISSN 2520-1131
Editore: Nature Publishing Group
DOI: 10.1038/s41928-022-00798-8

High yield and process uniformity for 300 mm integrated WS2 FETs

Autori: T.Schram, Q.Smets, D.Radisic, B.Groven, A.Thiam, W.Li, E.Dupuy,K.Vandersmissen, T.Maurice, I.Asselberghs & I.Radu
Pubblicato in: 2021 Symposium on VLSI Technology, 2021
Editore: IEEE

Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

Autori: Quentin Smets; Tom Schram; Devin Verreck; Daire Cott; Benjamin Groven; Zubair Ahmed; Ben Kaczer; Jerome Mitard; Xiangyu Wu; Souvik Kundu; Hans Mertens; Dunja Radisic; Arame Thiam; Waikin Li; Emmanuel Dupuy; Zheng Tao; Kevin Vandersmissen; Thibaut Maurice; Dennis Lin; Pierre Morin; Inge Asselberghs; Iuliana Radu
Pubblicato in: 2021 IEEE International Electron Devices Meeting, 2021
Editore: IEEE
DOI: 10.1109/iedm19574.2021.9720517

Wafer scale integration of MX2 based NMOS only ring oscillators on 300 mm wafers

Autori: Tom Schram; Hikmet. Celiker; Quentin Smets; Inge Asselbergs; G. S. Kar, Kris Myny
Pubblicato in: 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 2022
Editore: IEEE
DOI: 10.1109/snw56633.2022.9889048

Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

Autori: Yuanyuan Shi; Benjamin Groven; Quentin Smets; Surajit Sutar; Sreetama Banerjee; Henry Medina; Xiangyu Wu; Cedric Huyghebaert; Steven Brems; Dennis Lin; Pierre Morin; Matty Caymax; Inge Asselberghs; Iuliana Radu
Pubblicato in: 2021 IEEE International Electron Devices Meeting, 2021
Editore: IEEE
DOI: 10.1109/iedm19574.2021.9720676

Risultati finali

Pubblicazioni

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