Periodic Reporting for period 2 - SiC_Scope (Scanner for Early-Stage Quality Control in Silicon Carbide Crystals)
Período documentado: 2021-07-01 hasta 2022-12-31
SiC_Scope is a cutting-edge inspection equipment designed to detect internal defects in raw, unprocessed SiC crystals. SiC is an essential material for producing green electronics, and its unique properties make it more efficient and sustainable than traditional silicon-based materials. The SiC crystal possesses higher breakdown voltage and thermal conductivity, making it perfect for high-temperature and high-voltage applications like electric vehicles.
However, ensuring that SiC crystals are free of defects is a major challenge in using SiC for electronics. SiC_Scope addresses this issue by providing an innovative 3D scanning tool that enables inspection of raw SiC crystals for revealing defects before wafer processing. The SiC_Scope employs index-matching fluids, confocal tomography, and specialized software to extract defects and automate the inspection process. The early-stage defects detection not only saves time and resources but also guarantees that only high-quality material is used in the production process, reducing costs and enhancing the efficiency of semiconductor manufacturing.
Before the SiC_Scope, traditional SiC inspection methods required slicing the crystal into wafers and then visualizing defects in each wafer using chemical etching or a wafer inspection technique. This was a costly and time-consuming process, and determining the location of defects was not feasible without pre-processing. The SiC_Scope eliminates pre-processing by detecting defects before wafering, saving time and resources while ensuring that only the highest quality material enters the costly wafering stage.
The data collected by the SiC_Scope is objective and does not require human intervention, allowing crystal growers and furnace manufacturers to establish the relationship between furnace parameters and the number, location, and type of crystal defects. This information can be used to optimize the production process and reduce the number of defective crystals.
The scanner can inspect SiC pucks from 4" to 12" in diameter, covering over 95% of the world's SiC production. The use of SiC_Scope enables the production of higher quality SiC at an affordable cost, improving the performance and efficiency of electronic devices, reducing energy consumption and carbon emissions. In addition, optimising the production process can reduce waste and lower the overall cost of green electronics, making them more accessible to a wider range of consumers.
However, ensuring that SiC crystals are free of defects is a major challenge in using SiC for electronics. SiC_Scope addresses this issue by providing an innovative 3D scanning tool that enables inspection of raw SiC crystals for revealing defects before wafer processing. The SiC_Scope employs index-matching fluids, confocal tomography, and specialized software to extract defects and automate the inspection process. The early-stage defects detection not only saves time and resources but also guarantees that only high-quality material is used in the production process, reducing costs and enhancing the efficiency of semiconductor manufacturing.
Before the SiC_Scope, traditional SiC inspection methods required slicing the crystal into wafers and then visualizing defects in each wafer using chemical etching or a wafer inspection technique. This was a costly and time-consuming process, and determining the location of defects was not feasible without pre-processing. The SiC_Scope eliminates pre-processing by detecting defects before wafering, saving time and resources while ensuring that only the highest quality material enters the costly wafering stage.
The data collected by the SiC_Scope is objective and does not require human intervention, allowing crystal growers and furnace manufacturers to establish the relationship between furnace parameters and the number, location, and type of crystal defects. This information can be used to optimize the production process and reduce the number of defective crystals.
The scanner can inspect SiC pucks from 4" to 12" in diameter, covering over 95% of the world's SiC production. The use of SiC_Scope enables the production of higher quality SiC at an affordable cost, improving the performance and efficiency of electronic devices, reducing energy consumption and carbon emissions. In addition, optimising the production process can reduce waste and lower the overall cost of green electronics, making them more accessible to a wider range of consumers.
The challenge of the project was to build a fundamentally new instrument to inspect SiC crystals with different levels of doping. This involved developing the technology and hardware, writing new software and partially adapting existing software, and carrying out extensive testing. The main achievements of the project include:
1. Method & Hardware:
• Establishing the scientific testing principle
• Identifying sensors suitable for building the imaging component
• Designing the radiation source geometry
• Designing the 500+ mechanical parts
• Obtaining samples from various production stages, including SiC pucks and SiC wafers with different doping levels (Scientific Visual now boasts the most diverse library of SiC samples in the world)
• Measuring the transmittance of different doped and un-doped SiC samples at liquid helium temperature
• Testing and improving safety protection, chemical compatibility, and immersion liquid handling
Software & Data Analysis:
• Creating the algorithms and software to identify and locate of defects in a 3D crystal volume
• Upgrading the proprietary end-user software that classifies morphology and size of crystal defects
• Predict the quality of end wafers based on the measured defect pattern and required wafer parameters
• Optimize wafering parameters for the best yield (“Smart Wafering” technology, patent pending)
Prototypes:
• Designing the operational industrial prototypes covering SiC crystals of 4” to 12” in diameter
• Testing it with 5 top tier companies, collecting feedback, upgrading the process
1. Method & Hardware:
• Establishing the scientific testing principle
• Identifying sensors suitable for building the imaging component
• Designing the radiation source geometry
• Designing the 500+ mechanical parts
• Obtaining samples from various production stages, including SiC pucks and SiC wafers with different doping levels (Scientific Visual now boasts the most diverse library of SiC samples in the world)
• Measuring the transmittance of different doped and un-doped SiC samples at liquid helium temperature
• Testing and improving safety protection, chemical compatibility, and immersion liquid handling
Software & Data Analysis:
• Creating the algorithms and software to identify and locate of defects in a 3D crystal volume
• Upgrading the proprietary end-user software that classifies morphology and size of crystal defects
• Predict the quality of end wafers based on the measured defect pattern and required wafer parameters
• Optimize wafering parameters for the best yield (“Smart Wafering” technology, patent pending)
Prototypes:
• Designing the operational industrial prototypes covering SiC crystals of 4” to 12” in diameter
• Testing it with 5 top tier companies, collecting feedback, upgrading the process
The SiC_Scope project is a ground-breaking innovation in the field of crystal inspection and has the potential to significantly impact the production and sustainability of green electronics. The use of this instrument allows the automation of the inspection process of raw SiC crystals, improving the efficiency and accuracy of quality control.
One of the unique features of the SiC_Scope is its ability to collect objective data on crystal defects, which can be used to optimise the production process and reduce the number of defective crystals in the future. This is particularly important in the context of green electronics production, where waste reduction and cost efficiency are key concerns.
In addition to its technological innovations, the SiC_Scope also has the potential to have a significant socio-economic impact. The young SiC industry is currently experiencing rapid growth and the SiC_Scope is expected to be in high demand by manufacturers and producers. By reducing the cost of producing green electronics, Scientific Visual's technology helps to make these products more accessible to a wider range of consumers. This will have a positive impact on both the environment and the economy, as the adoption of green electronics can reduce energy consumption and carbon emissions.
One of the unique features of the SiC_Scope is its ability to collect objective data on crystal defects, which can be used to optimise the production process and reduce the number of defective crystals in the future. This is particularly important in the context of green electronics production, where waste reduction and cost efficiency are key concerns.
In addition to its technological innovations, the SiC_Scope also has the potential to have a significant socio-economic impact. The young SiC industry is currently experiencing rapid growth and the SiC_Scope is expected to be in high demand by manufacturers and producers. By reducing the cost of producing green electronics, Scientific Visual's technology helps to make these products more accessible to a wider range of consumers. This will have a positive impact on both the environment and the economy, as the adoption of green electronics can reduce energy consumption and carbon emissions.