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Synthesis of group iv based semiconducting nanoparticles and layers

Ziel



Research objectives and content
This Research Project is aimed at defining the best elaboration conditions for the obtention of (Si, Ge, C) based nanoparticles and layers by implanting these elements into Si and Si02 and annealing of the structures. The link between elaboration conditions, size distributions of the particles or chemical composition of the layers and the resulting optical properties will be systematically studied through a variety of techniques.
Training content (objective, benefit and expected impact)
For the applicant, this post-doctoral position will be a unique opportunity to broaden her expertise in the field of ion implantation in semiconducting materials and to access to new experimental techniques and expertises which will help her in view of applying for a permanent position in Europe either in a public or private laboratory. For the host institution, the expected benefits will come from the expertise in ion implantation and diffusion, and from the TEM "savoir-faire" of the applicant.
Lines with industry / industrial relevance (22)
The applicant and both laboratories have a long lasting experience of collaboration with european industries through direct contracts (LETI-SOITEC, Motorola, GEC Marconi) and within European programs (Philips, ST Thomson). The realization of Si- -A r Ova mstPri:alR Sand Si based light Miters is of interest to most of them.

Wissenschaftliches Gebiet (EuroSciVoc)

Programm/Programme

Thema/Themen

Aufforderung zur Vorschlagseinreichung

Daten nicht verfügbar

Finanzierungsplan

RGI - Research grants (individual fellowships)

Koordinator

UNIVERSITAT DE BARCELONA
EU-Beitrag
Keine Daten
Adresse
Marti I Franques 1
08028 BARCELONA
Spanien
Gesamtkosten
Keine Daten

Beteiligte (1)