Ziel
This proposal targets the fabrication of new electronic memory devices making use of nanocrystals instead of poly-Si as charge storage elements. Such memory devices could more easily be miniaturized allowing an increase of the information storage capacity and a decrease of power consumption. The proposed processes to form nanocrystals are based on ion beam synthesis or deposition techniques. The main technical and scientific objective of the project is the Materials Science investigation of the Self-Assembly process for the formation of well defined patterns of 3-5 nm nanocrystals and the engineering of reliable memory devices based on such schemes. The proposed processes can result in the formation of 2-dimensional patterns of nanocrystals. Such structures will be optimized through a systematic feedback from characterization techniques (structural, chemical and electrical) and predictive simulations in order to find best process windows for the fabrication of demonstrator devices.
Wissenschaftliches Gebiet
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Aufforderung zur Vorschlagseinreichung
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CSC - Cost-sharing contractsKoordinator
31055 TOULOUSE
Frankreich