Obiettivo Insight into the fundamental physical properties of the novel semiconductor structures quantum dots, as well as in physical processes during their formation, will be gained by this project. One of the most promising methods of creating quantum dot structures - the strain induced self-organized growth process, will be used in the work. A uniform array of quantum dots may be formed by molecular beam epitaxy by depositing a critical amount of lattice mismatched material on the substrate surface. Using this approach for InAs/GaAs the St. Petersburg team has increased recently the quality of the structures up to a level where laser emission becomes possible. This experience and achievement will be followed and combined with complementary extensive experience in the investigation of quantum size effect structures and the unique techniques of the other participating groups: the local cathodoluminescence technique with an unmatched combination of high lateral and time resolution in a wide temperature range will enable the investigation of the electron spectra and relaxation processes in a single quantum dot and directly connect them with structural properties (Berlin group); photoluminescence and photoluminescence excitation spectra investigations in high magnetic fields will enable the evaluation of the degree of carrier localization and the role of inhomogeneous broadening (Sheffield group); and a structural investigation by highly developed TEM and HREM techniques will enable detailed examination of the structural properties and strain redistribution and relaxation processes (Halle group); investigation of self-organized formation of quantum dots by means of scanning tunnelling microscopy (St. Petersburg).This combination of highly qualified groups and unique techniques make it quite likely that the following goals will be achieved: the clarification of mechanisms of strain redistribution and relaxation during formation of dots in strained systems; the characterisation of electronic spectra and carrier relaxation and recombination mechanisms; and the finding of interconnections between structural and electronic properties of quantum dot structures and methods to control via growth parameters their characteristics. Programma(i) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Argomento(i) 15 - Condensed Matter Physics Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore Technische Universität Berlin Contributo UE Nessun dato Indirizzo Hardenbergstraße 36 10623 Berlin Germania Mostra sulla mappa Costo totale Nessun dato Partecipanti (4) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Institute for Analytical Instrumentation Russia Contributo UE Nessun dato Indirizzo 198103 St. Petersburg Mostra sulla mappa Costo totale Nessun dato Max-Planck Gesellschaft zur Förderung der Wissenschaften e.V. Germania Contributo UE Nessun dato Indirizzo 06120 Halle - Saale Mostra sulla mappa Costo totale Nessun dato Russian Academy of Sciences Russia Contributo UE Nessun dato Indirizzo 194021 St. Petersburg Mostra sulla mappa Costo totale Nessun dato UNIVERSITY OF SHEFFIELD Regno Unito Contributo UE Nessun dato Indirizzo Hounsfield Road, Hicks Building S3 7RH SHEFFIELD Mostra sulla mappa Costo totale Nessun dato