Objective
The primary objective of the present proposal is to study, investigate and develop hydride vapour phase epitaxy (HVPE) of GaN to grow high quality composite strates GaN/SiC and bulk GaN crystals for a new generation of group III-Nitride based devices. The HVPE GaN will then be used for growth of lattice-matched group III-nitrides layers, structures and optoelectronic devices by Gas Source Mollar Beam Epitaxy (GSMBE) and Metal-Organic Vapour Phase Epitaxy (MOVPE).
To reach the final goal of the project, the technology of HVPE of high quality GaN layers on 6H-SiC, the HVPE technology of thick GaN layers and the technology of SiC strates removal will be studied to produce GaN-bulk material for sequent homoepitaxial growth of nitride-based structures by GSMBE and MOVPE. Various parameters of the structures will be studied by techniques including AES, SEM, STEM, X-ray diffraction , RHEED, EPMA, CL, and PL. SIMS, SNMS, XPS. And finally LED device technology will be developed.
This technology project will make available for the first time in Europe a blue LED technology using GSMBE and MOVPE growth on composite GaN/SiC strates and bulk GaN strates. This will make available to European industry a vital technology in the field of optoelectronics and display technologies. It also provides an opportunity to show the real possibility of a viable collaboration in the field of device fabrication between the NIS and EU and EEA countries.
Topic(s)
Data not availableCall for proposal
Data not availableFunding Scheme
Data not availableCoordinator
NG7 2RD Nottingham
United Kingdom