Cel
The primary objective of the present proposal is to study, investigate and develop hydride vapour phase epitaxy (HVPE) of GaN to grow high quality composite strates GaN/SiC and bulk GaN crystals for a new generation of group III-Nitride based devices. The HVPE GaN will then be used for growth of lattice-matched group III-nitrides layers, structures and optoelectronic devices by Gas Source Mollar Beam Epitaxy (GSMBE) and Metal-Organic Vapour Phase Epitaxy (MOVPE).
To reach the final goal of the project, the technology of HVPE of high quality GaN layers on 6H-SiC, the HVPE technology of thick GaN layers and the technology of SiC strates removal will be studied to produce GaN-bulk material for sequent homoepitaxial growth of nitride-based structures by GSMBE and MOVPE. Various parameters of the structures will be studied by techniques including AES, SEM, STEM, X-ray diffraction , RHEED, EPMA, CL, and PL. SIMS, SNMS, XPS. And finally LED device technology will be developed.
This technology project will make available for the first time in Europe a blue LED technology using GSMBE and MOVPE growth on composite GaN/SiC strates and bulk GaN strates. This will make available to European industry a vital technology in the field of optoelectronics and display technologies. It also provides an opportunity to show the real possibility of a viable collaboration in the field of device fabrication between the NIS and EU and EEA countries.
Temat(-y)
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NG7 2RD Nottingham
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