Electronic transport in semiconductor structures with quantum dots

Project Information

Grant agreement ID: INTAS-RFBR95-0618

Start date

End date

Funded under

• International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Total cost No data

EU contribution No data

Coordinated by

University of Nottingham
United Kingdom

Objective

Fundamental properties of zero-dimensional structures will be gained by this project. Investigations will be carried out of temperature dependent capacitance-voltage (C-V), current-voltage (I-V) and capacitance transient spectroscopy (DLTS) experiments of semiconductor matrices containing sheets with ordered quantum dots (QDs) or arrays of vertically-coupled QDs via tunneling (VECQDs) with the lateral size lower than 20 nm.

For growth of self-organized arrays of uniform QDs based on both I type (InAs-GaAs) and II type (GaSb-GaAs) heterostructures we will use molecular beam epitaxy and MOCVD.

A physical model will be developed to describe C-V and DLTS characteristics of semiconductor heterostructures containing a sheet with QDs. It will be possible to determine the following parameters : (i) the distance from the surface to the plane with quantum QDs, (ii) the sheet concentration of QDs, (iii) electron (hole) energy levels in QDs, and (iv) occupation of QDs as a function of temperature, and (v) electron and hole capture and emission cross sections.

Using static and dynamic capacitance spectroscopy in p- and n-type doped matrices it is possible to study electron and hole states in QDs separately. Investigations of the electric field influence on the recharging of QDs will be carried out. The influence of charge located in the plane with QDs on the distribution of the electric field through all the structure will be studied. Experiments will be conducted on structures with degenerate electron occupation of QDs to determine the influence of electron-electron interaction on the spectrum of energy levels in Qds.

The data on properties of QDs obtained from C-V and DLTS characteristics will be exploited to create a resonant tunneling diode structure and zero-dimensional Esaki-Tsu superlattice, where the tunneling process goes through energy levels in QDs. The properties of these structures will be investigated.

The results of the project will be published in scientific press and presented on conferences.

Programme(s)

• IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Topic(s)

• 1 - Physics, Astronomy, Astrophysics

Call for proposal

Data not available

Funding Scheme

Data not available

Coordinator

University of Nottingham

• EU contribution: No data
• Address: University Park ; NG7 2RD Nottingham ; United Kingdom
• Total cost: No data

Participants (1)

A.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences

Russia

• EU contribution: No data
• Address: 194021 St. Petersburg
• Total cost: No data