A new type of stable amorphous silicon thin film solar module with PIN / TCO / NIP structure

Informazioni relative al progetto

ID dell’accordo di sovvenzione: JOU20049

Progetto chiuso

Data di avvio 1 Novembre 1992

Data di completamento 31 Ottobre 1995

Finanziato da

• Specific research and technological development programme (EEC) in the field of non-nuclear energy, 1990-1994

Costo totale

Nessun dato

Contributo UE

Nessun dato

Coordinato da

Siemens AG
Germany

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Risultati sfruttabili

A new type of stable amorphous silicon thin film solar module with PIN/TCO/NIP structure

Existing amorphous silicon solar modules display limitations with respect to efficiency, stability relating to light-induced degradation and fabrication yield. The new, low cost amorphous silicon thin-film module developed and demonstrated during this project shows significant improvements on existing technology. Several areas of potential technological improvements for thin-film amorphous silicon solar modules have been recognised. These include stability improvements with respect to light-induced degradation and the achievement of higher efficiency and greater fabrication yields. The objective of this project was to develop a new type of low cost, amorphous silicon thin-film module which addresses each of these concepts. The project aimed to achieve these advancements through a new modelling of the pin/TCO (transparent conductive oxide)/nip solar cell internal structure. Demonstrator cells with a stabilised efficiency of 8% and related laser pattern processing technologies were developed with the aim of subsequent upscaling to 30 cm 2 modules.