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Content archived on 2024-04-16

Plasma deposition systems for photovoltaic quality amorphous silicon and alloys: plasma diagnostic and materials characterization

Objective

The aim of the work is to deal with the main difficulties involved in the Plasma Assisted Chemical Vapour Deposition (PA-CVD) of amorphous hydro-generated silicon (a-Si:H)
Research has been carried out in order to deal with the main difficulties involved in the plasma assisted chemical vapour deposition (PA-CVD) of amorphous hydrogenerated silicon. The study involves correlating the amorphous film quality with microscopic rather than macroscopic plasma parameters while continuously developing the deposition process. Results so far have shown that poor photon absorption in very thin amorphous silicon enhances photostability but decreases conversation efficiency. This problem was solved by using multijunction cells to absorb a larger spectrum.
The idea that stands behind our approach is to correlate the amorphous film quality with microscopic, rather than macroscopic, plasma parameters while continuously developing the deposition process. Our approach is outlined in the following table:

1) Improvement required:

1.1 Enhancement of the deposition rate
1.2 Enhancement of film characteristics
- Film uniformity
- Film quality

2) Use of extensive diagnostics for the:

2.1 Elucidation of mechanism
2.2 Modelling
2.3 Effective process control

3) Modification of the process

3.1 Modification of plasma characteristics
- Geometrical effects
- Frequency effects
3.2 Modification of the feed gas
- Dilution effects
- Use of Disilane
3.3 Alternative and similar materials
- Application to a-Si:Ge
- Application to a-Si:C
- Application to a-Si:F:H

Topic(s)

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Call for proposal

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Coordinator

University of Patras
EU contribution
No data
Address
Panepistimioupolis Rion
26500 PATRAS
Greece

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Total cost
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Participants (3)