Plasma deposition systems for photovoltaic quality amorphous silicon and alloys: plasma diagnostic and materials characterization

Projektinformationen

ID Finanzhilfevereinbarung: JOUR0081

Startdatum 1 April 1990

Enddatum 31 Dezember 1992

Finanziert unter

• Specific research and technological development programme (EEC) in the field of energy - non-nuclear energies and rational use of energy - (JOULE), 1989-1992

Gesamtkosten € 0,00

EU-Beitrag Keine Daten

Koordiniert durch

University of Patras
Greece

Ziel

The aim of the work is to deal with the main difficulties involved in the Plasma Assisted Chemical Vapour Deposition (PA-CVD) of amorphous hydro-generated silicon (a-Si:H)
Research has been carried out in order to deal with the main difficulties involved in the plasma assisted chemical vapour deposition (PA-CVD) of amorphous hydrogenerated silicon. The study involves correlating the amorphous film quality with microscopic rather than macroscopic plasma parameters while continuously developing the deposition process. Results so far have shown that poor photon absorption in very thin amorphous silicon enhances photostability but decreases conversation efficiency. This problem was solved by using multijunction cells to absorb a larger spectrum.
The idea that stands behind our approach is to correlate the amorphous film quality with microscopic, rather than macroscopic, plasma parameters while continuously developing the deposition process. Our approach is outlined in the following table:

1) Improvement required:

1.1 Enhancement of the deposition rate
1.2 Enhancement of film characteristics
- Film uniformity
- Film quality

2) Use of extensive diagnostics for the:

2.1 Elucidation of mechanism
2.2 Modelling
2.3 Effective process control

3) Modification of the process

3.1 Modification of plasma characteristics
- Geometrical effects
- Frequency effects
3.2 Modification of the feed gas
- Dilution effects
- Use of Disilane
3.3 Alternative and similar materials
- Application to a-Si:Ge
- Application to a-Si:C
- Application to a-Si:F:H

Wissenschaftliches Gebiet

• natural sciences › physical sciences › plasma physics
• natural sciences › chemical sciences › inorganic chemistry › metalloids
• natural sciences › physical sciences › theoretical physics › particle physics › photons

Programm/Programme

• FP2-JOULE 1 - Specific research and technological development programme (EEC) in the field of energy - non-nuclear energies and rational use of energy - (JOULE), 1989-1992

Thema/Themen

Data not available

Aufforderung zur Vorschlagseinreichung

Data not available

Finanzierungsplan

CSC - Cost-sharing contracts

Koordinator

University of Patras

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• Adresse: Panepistimioupolis Rion ; 26500 PATRAS ; Griechenland
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Beteiligte (3)

Eniricerche SpA

Italien

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• Adresse: Via Ramasini 32 ; 00015 Monterotondo Roma
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PHILIPPS UNIVERSITAET MARBURG

Deutschland

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• Adresse: Biegenstrasse 10 ; MARBURG
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UNIVERSITA DEGLI STUDI DI BARI

Italien

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• Adresse: Via G. Orabona 4 Campus Universitario ; 70125 BARI
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