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Content archived on 2024-04-16

OXYGEN IN SEMICONDUCTOR SILICON

Objective



The oxygen content of silicon is an important parameter for the manufacturing of integrated circuits and other electronic devices. The measurements are based on infrared absorption spectrometry. Results of infrared absorption measurement often differ by several percent between different laboratories. Industry has therefore requested the BCR programme to produce silicon reference materials (zero specimens needed in the measurements as well as samples to check infrared spectrometers).

RESULTS

Intercomparisons have been organized to improve the measurements of the actual oxygen content and of the infrared absorption.
Two reference materials have been certified.
CRM 368: silicon with very low 0 content, to be used as "zero"
specimens: 69 +/- 19 ng/g
Certification report: EUR 12927 (1990)
CRM 369: silicon with 0 contents in the range of industrial interest, for testing the accuracy (photometry + software) or the IR Instruments:
absorption coefficients in the range 2.2 - 3.8 cm{-1}
oxygen contents in the range 8 - 13 ug/g
Certification report : EUR 12928 (1991)

Topic(s)

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Call for proposal

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Coordinator

United Kingdom Atomic Energy Authority (UKAEA)
EU contribution
No data
Address
Harwell Laboratory
OX11 0RA Didcot
United Kingdom

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Total cost
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Participants (16)