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OXYGEN IN SEMICONDUCTOR SILICON

Objective



The oxygen content of silicon is an important parameter for the manufacturing of integrated circuits and other electronic devices. The measurements are based on infrared absorption spectrometry. Results of infrared absorption measurement often differ by several percent between different laboratories. Industry has therefore requested the BCR programme to produce silicon reference materials (zero specimens needed in the measurements as well as samples to check infrared spectrometers).

RESULTS

Intercomparisons have been organized to improve the measurements of the actual oxygen content and of the infrared absorption.
Two reference materials have been certified.
CRM 368: silicon with very low 0 content, to be used as "zero"
specimens: 69 +/- 19 ng/g
Certification report: EUR 12927 (1990)
CRM 369: silicon with 0 contents in the range of industrial interest, for testing the accuracy (photometry + software) or the IR Instruments:
absorption coefficients in the range 2.2 - 3.8 cm{-1}
oxygen contents in the range 8 - 13 ug/g
Certification report : EUR 12928 (1991)

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

United Kingdom Atomic Energy Authority (UKAEA)
Address
Harwell Laboratory
OX11 0RA Didcot
United Kingdom

Participants (16)

Centre d'Etudes et de Recherches par Irradiation
France
Address

Orleans
Dynamit Nobel Silicon
Italy
Address

28100 Novara
ECOLE NORMALE SUPÉRIEURE
France
FEDERAL INSTITUTE FOR MATERIAL RESEARCH AND TESTING
Germany
Address
87,Unter Der Eichen 87
12205 Berlin
Imperial College of Science, Technology and Medicine
United Kingdom
Address

SW7 2AZ London
Instituut voor Nucleaire Wetenschappen (RUG)
Belgium
Address

Gent
Johann-Wolfgang-Goethe-Universität Frankfurt
Germany
Address
August Euler Straße 6
60486 Frankfurt Am Main
Joint Research Centre
Belgium
Address

Geel
Laboratorium voor Kristallografie en Studie van de Vaste Stof (RUG)
Belgium
Address

Gent
Max-Planck-Gesellschaft zur Förderung der Wissenschaften eV
Germany
Address
Bunsen-kirchhoff-straße 13
44139 Dortmund
Philips Components
United Kingdom
Address

SO Southampton
Royal Signals and Radar Establishment
United Kingdom
Address

Great Malvern
Siemens AG
Germany
Address
Otto-hahn-ring 6
81739 München
Telefunken Microelectronic GmbH
Germany
Address
Theresienstraße 2
74072 Heilbronn
UNIVERSITY OF READING
United Kingdom
Address
Whiteknigts
RG6 6AF Reading / Silchester
Wacker Chemitronic
Germany
Address
Johannes-hess-straße 24
84489 Burghausen