Obiettivo - Establishing a reliable European source for 4" semi-insulating GaAs substrate fabrication, optimised for ion implantation applications. Comparison of 3" and 4" state-of-the-art world market material.- Epi-ready wafers directly usable for an MBE process. Attention will be paid to the requirements on geometry and surface conditions. - Production and qualification of high performance 4" MBE-grown P-HEMT epiwafers. Tests will be performed by a device supplier (SIE) to evaluate the material quality.- Comparison of the P-HEMT structures grown by MOVPE and MBE processes. In addition, application and quality as factors in production will be addressed.- Establishing a European commercial source of GaInP/GaAs HBT epitaxial wafers. Evaluation and characterisation of materials developed by EPI and IAF by the industrial users in their standard production lines.GaAs technology for both discrete and IC components has proved to be indispensable for advanced telecommunication and automotive systems. The use of GaAs clearly starts where the silicon ends i.e. in meeting system requirements such as the RF front-end of mobile communication equipment, broadband radio links and anti-collision systems.The main interest of this project is to develop and qualify semi-insulating bulk GaAs and epitaxial material for three major microwave applications: MESFETs, pseudomorphic HEMTs and GaInP-HBTs; and to establish competitive European production facilities in those domains. Campo scientifico natural scienceschemical sciencesinorganic chemistrypost-transition metalsnatural sciencesmathematicspure mathematicsgeometrynatural scienceschemical sciencesinorganic chemistrymetalloids Programma(i) FP4-ESPRIT 4 - Specific research and technological development programme in the field of information technologies, 1994-1998 Argomento(i) 2.14 - Semiconductors-Enhancement of technology & manufacturing base Invito a presentare proposte Data not available Meccanismo di finanziamento CSC - Cost-sharing contracts Coordinatore Laboratoires D'electronique Philips Contributo UE Nessun dato Indirizzo Avenue Descartes 22 94453 Limeil Brevannes Francia Mostra sulla mappa Costo totale Nessun dato Partecipanti (13) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Daimler-Benz Germania Contributo UE Nessun dato Indirizzo Epplestrasse - P.O. Box 2360 225 70546 Stuttgart Mostra sulla mappa Costo totale Nessun dato Epitaxial Products International Ltd Regno Unito Contributo UE Nessun dato Indirizzo Cypress Drive St Mellons CF3 0EG Cardiff Mostra sulla mappa Costo totale Nessun dato Ferdinand-Braun-Institut fur Hochstfrequenztechnik Berlin (Fbh) Germania Contributo UE Nessun dato Indirizzo Rudower Chaussee 5 12489 Berlin Mostra sulla mappa Costo totale Nessun dato Foundation of Research and Technology - Hellas (Forth) Grecia Contributo UE Nessun dato Indirizzo Vassilika Vouton GR 711 10 Heraklion Mostra sulla mappa Costo totale Nessun dato Fraunhofer-Inst.Fuer Angewandte Festkorperphysik Germania Contributo UE Nessun dato Indirizzo Tullastrasse 72 79108 Freiburg Mostra sulla mappa Costo totale Nessun dato Freiberger Compound Materials Gmbh Germania Contributo UE Nessun dato Indirizzo Berthelsforder Strasse 113 09599 Freiberg Mostra sulla mappa Costo totale Nessun dato Gec - Marconi Limited Acting Through Its Management Company Gec-Marconi Materials Technology Regno Unito Contributo UE Nessun dato Indirizzo NN12 8EQ Caswell Towcester Mostra sulla mappa Costo totale Nessun dato PICOGIGA Francia Contributo UE Nessun dato Indirizzo 5 RUE DE LA REUNION 91952 LES ULIS Mostra sulla mappa Costo totale Nessun dato Siemens Ag Germania Contributo UE Nessun dato Indirizzo Wittelsbacher Platz 2 D-80333 Munich Mostra sulla mappa Costo totale Nessun dato Thomson-Csf Lcr Francia Contributo UE Nessun dato Indirizzo Domaine De Corbeville 91404 Orsay Mostra sulla mappa Costo totale Nessun dato Thomson-Csf Semiconductors Specifiques Francia Contributo UE Nessun dato Indirizzo Boulevard Haussmann 173 75415 Paris Mostra sulla mappa Costo totale Nessun dato UNITED MONOLITHIC SEMICONDUCTORS GMBH Germania Contributo UE Nessun dato Indirizzo WILHELM-RUNGE-STRASSE 11 ULM Mostra sulla mappa Costo totale Nessun dato United Monolithic Semiconductors Sas Francia Contributo UE Nessun dato Indirizzo Route Departementale 128 91400 Orsay Mostra sulla mappa Costo totale Nessun dato
