The objective of the project is twofold:
i) to develop and;
ii) to assess the potential for nanoimprint technology for the coming semiconductor fabrication requirements in the sub-10 nm domain. We intend to meet the objective by exploring NanoImprint Lithography (NIL) for making individual structures on the sub-10 nm level as well as explore the possibility for making imprint over large areas (up to 6'' wafers). We realize that for large areas we need to relax specifications and expand today's individual sub-100 nm level into the large area domain in order to reach results within a three-year perspective. However, the results obtained on the individual 10 nm level will then be transferable to the large area domain. A result we expect a nanofabrication technique with capabilities for mass production aiming towards the sub-10 nm domain, with a clear identification of its potential. Furthermore, nano-imprint technology will be an important contribution to ensure a strong competitive position for the EU in the key emerging technologies for information processing circuits.

OBJECTIVES
The objectives of the project are:
i) to develop and;
ii)to assess the potential for nanoimprint technology for the coming semiconductor fabrication requirements in the sub-10 nm domain.

This will be realized by exploring:
I) NIL for making individual structures on the sub-10 nm level as well as exploring;
II) the possibility for making imprint over large areas (up to 6'' wafers).

The impact of nanoimprint technology, if succesfully transferred to industry, would be huge. Application areas would include e.g. storage technologies (optical, magnetic etc), micro/nano-electronics and bio-sensor devices and would make strong impact onto every-day life.

DESCRIPTION OF WORK
Nanoimprint lithography (NIL) has the potential to revolutionize the production of nm-scale devices and integrated circuits. Future high volume data storage and high-speed data processing will require reliable large area patterning technologies for fabrication of nano-scaled structures. Present lithography for sub-100 nm structures (e-beam, X-ray, ion projection) suffers form severe drawbacks for volume production, limited throughput or expensive equipment using the same tools developed for the large area sub-100 nm NIL. This workprogramme is a direct continuation of the project NANOTECH.

It has combined aims of:
a) to explore the potential of nanoimprint and pattern transfer at the sub - 10 nm domain;
b) to address large area NIL;
c) to investigate mix&match technology;
d) to develop concepts for stamp replication;
e) to optimise NIL polymer materials;
f) to develop measures for quality control, and;
g) to investigate the influence of NIL-processing onto the substrates electrical and optical properties.