The outstanding optoelectronic and microwave properties of III-V materials coupled with highly compact and inexpensive silicon technology could constitute a powerful system for electronic breakthroughs. Nevertheless, the integration of such materials on silicon has proved to be a difficult task in terms of producing increased performance and efficiency in industrial applications. The use of recently developed, highly specialised techniques in epitaxial growth of alloys on chips has been found essential for such effective integrations. This project studied the development of novel precursor systems optimised for selective area and conformal growth epitaxy. Using specialised techniques, the project extensively explored the availability and characterisation of potential sources in terms of purity and chemical compatibility. In this way, project partners were capable of developing optimum precursors with unique capabilities of growth and combinations. Thereby, the new precursors may allow the deposition and doping of GaAs/AlGaAs and related semiconductor alloys. These precursors can be commercially produced, enabling the development of innovative, high technology solutions. As such they are expected to make possible the realisation of a broad range of new electronic and optoelectronic devices. The new devices may display advanced performances and functionalities particularly in the fields of optical communications and power applications. Furthermore, the acquired experience gained from project work is also anticipated to benefit further research activities within this field.