Workshop on silicon on insulator technology, Gothenburg, Sweden

The fifth workshop of the 'Thematic network on silicon on insulator technology, devices and circuits' (EUROSOI 2009) will take place from 19 to 21 January 2009 in Gothenburg, Sweden.

The event is an international forum to promote interaction and exchanges between research groups and industrial partners involved in silicon on insulator (SOI) activities all over the world.

EUROSOI 2009 will be held at the Chalmers University of Technology and will include oral and poster sessions, keynote presentations, a tutorial and ample room for informal discussions.

The agenda covers recent progress in SOI technologies and will be of interest to materials and device scientists, as well as to process, circuits and applications-oriented engineers. Typical topics include:
- the synthesis of advanced SOI wafers;
- materials evaluation, properties of ultra-thin films and buried oxides, defects and stress, interface quality;
- SOI metal-oxide-semiconductor field-effect transistors (MOSFETs): characterisation, modelling and simulation of typical mechanisms, parameter extraction, reliability issues;
- high-performance complementary metal-oxide-semiconductors (CMOS) and bipolar devices: low power/voltage and radio frequency (RF) circuits, memories, sensors and microelectromechanical systems (MEMS);
- innovative devices: multiple-gates, tunnelling transistors.

The event is partly sponsored by the EU-funded Network of Excellence NANOSIL.For further information, please visit:
http://chalmers2009.eurosoi.org/