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CORDIS

GaN for Advanced Power Applications

Project description

GaN could drive next-generation power electronics

Gallium nitride (GaN) is a wide-bandgap material that could take electronic performance to the next level. The pervasive use of GaN-based devices will enable the development of power electronic systems with energy losses close to zero in addition to lower volume/weight and systems cost. The EU-funded GaN4AP project plans to make GaN-based electronics the primary technology in devices for all power conversion systems. The project targets innovative power electronic systems and materials, and a new generation of vertical power devices. It plans to develop intelligent and integrated GaN solutions both in system-in-package and monolithic variances. The development of new power supply devices and circuits using GaN-based electronics is crucial for the competitiveness of EU industries.

Objective

GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems.
GaN4AP project will…
1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99% power conversion efficiency.
2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors.
3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems.
4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state of the art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge.
The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.

Coordinator

DISTRETTO TECNOLOGICO SICILIA MICROE NANO SISTEMI SCARL
Net EU contribution
€ 157 500,00
Address
ZONA INDUSTRIALE VIII STRADA SN
95121 Catania
Italy

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Region
Isole Sicilia Catania
Activity type
Research Organisations
Links
Total cost
€ 4 300 000,00

Participants (45)