Project description DEENESFRITPL High-performance ferroelectric MOSFETs for future high-frequency communications Developing transistors with high switching speeds and high output powers is crucial for their operation at the millimetre-wave frequency spectrum. Traditional transistors can become much more efficient with the addition of a thin layer of a ferroelectric material. So far, researchers have studied the integration of ferroelectric films into metal–insulator–metal structures, silicon and 2D materials. The EU-funded DYNAMISM project plans to develop a III–V technology platform that includes ferroelectric materials. The high electron mobility in III–V materials causes a high transconductance in metal-oxide semiconductor field-effect transistors (MOSFETs). This enables three orders of magnitude higher cut-off frequencies and unity gain frequencies compared to those of competing silicon MOSFETs. Show the project objective Hide the project objective Objective The discovery of ferroelectric characteristics in annealed HfO2–based films opens a wide range of applications not only in memory and logic, but the results will enable new scientific directions for instance in reconfigurable electronics. So far, ferroelectric films have been investigated in metal-insulator-metal structures suitable for back-end-of-line integration. They have also been introduced onto Si and two-dimensional materials. However, there is a gap of knowledge with lack of science and technology for integration of HfO2–based ferroelectric films on III-V channel materialswhere the increased permittivity will improve electrostatics. III-V transistors hold a key position for high-performance millimetre wave electronics. The high electron mobility in III-V materials contributes to a high transconductance that enables high unity-current-gain cut-off frequency and unity-power-gain cut-off frequency, fT and fmax, more than a factor 3 higher than competing Si MOSFET technologies. The wide options for heterostructure design have enabled III-V steep-slope transistors for low-power electronics operating down to 30 mV/dec without hysteresis . To research for the first time ferroelectric films integrated on high-performance III-V devices at technology-relevant dimensions, we will use our demonstrated integration of Hf0.5Zr0.5O2 on InAs:- Establishing the best strategy to integrate ferroelectric gate-stacks on III-V materials with strong polarization and long endurance.- Characterizing the dynamic properties with non-volatile functionality of ferroelectric films integrated on III-V transistor channels.- Investigating ferroelectric III-V MOSFETs for future applications including millimeter-wave devices, cryogenic electronics, Negative Capacitance FET (NC-FET) circuitry, and Ferroelectric Tunnel Junctions (FTJs).Combined, the new science and technology will enable novel high-performance devices as well as reconfigurable millimetre-wave electronics. Fields of science engineering and technologyelectrical engineering, electronic engineering, information engineeringinformation engineeringtelecommunicationsradio technologymicrowave technology Programme(s) H2020-EU.1.1. - EXCELLENT SCIENCE - European Research Council (ERC) Main Programme Topic(s) ERC-2020-ADG - ERC ADVANCED GRANT Call for proposal ERC-2020-ADG See other projects for this call Funding Scheme ERC-ADG - Advanced Grant Host institution LUNDS UNIVERSITET Net EU contribution € 2 500 000,00 Address Paradisgatan 5c 22100 Lund Sweden See on map Region Södra Sverige Sydsverige Skåne län Activity type Higher or Secondary Education Establishments Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Total cost € 2 500 000,00 Beneficiaries (1) Sort alphabetically Sort by Net EU contribution Expand all Collapse all LUNDS UNIVERSITET Sweden Net EU contribution € 2 500 000,00 Address Paradisgatan 5c 22100 Lund See on map Region Södra Sverige Sydsverige Skåne län Activity type Higher or Secondary Education Establishments Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Total cost € 2 500 000,00
