Dynamic Properties of Ferroelectric III-V MOSFETs

Project Information

DYNAMISM

Grant agreement ID: 101019147

DOI

10.3030/101019147

Project closed

EC signature date 28 June 2021

Start date 1 September 2021

End date 31 August 2026

Funded under

• EXCELLENT SCIENCE - European Research Council (ERC)

Total cost

€ 2 500 000,00

EU contribution

€ 2 500 000,00

Coordinated by

LUNDS UNIVERSITET
Sweden

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Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

Peer reviewed articles (16)

Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor

Author(s): Zhongyunshen Zhu, Anton E. O. Persson, Lars-Erik Wernersson
Published in: ACS Nano, Issue 18, 2024, Page(s) 28977-28985, ISSN 1936-0851
Publisher: American Chemical Society
DOI: 10.1021/acsnano.4c09598

Low-Frequency Noise in Ferroelectric III–V Vertical Gate-All-Around FETs

Author(s): Zhongyunshen Zhu, Mamidala Karthik Ram, Anton E. O. Persson, Lars-Erik Wernersson
Published in: IEEE Electron Device Letters, Issue 46, 2025, Page(s) 741-744, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2025.3546165

As-deposited ferroelectric HZO on a III-V semiconductor

Author(s): A. Andersen; AEO Persson; and L.-E. Wernersson
Published in: Applied Physics Letters, 2022, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0097462

Cryogenic Ferroelectricity of HZO With an Aluminum Oxide Interlayer

Author(s): Mamidala Karthik Ram, Lars-Erik Wernersson
Published in: IEEE Transactions on Electron Devices, Issue 73, 2026, Page(s) 652-658, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2025.3629590

Memory State Dynamics in BEOL FeFETs: Impact of Area Ratio on Analog Write Mechanisms and Charging

Author(s): Hannes Dahlberg, Oscar Kaatranen, Karl-Magnus Persson, Arto Rantala, Jacek Flak, Lars-Erik Wernersson
Published in: IEEE Access, Issue 13, 2025, Page(s) 9923-9930, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2025.3527628

Interface Characterization of Plasma‐Treated InAs Electrodes for Resistive Random‐Access Memories Using Capacitance–Voltage Methods

Author(s): André Andersen, Saketh Ram Mamidala, Lars‐Erik Wernersson
Published in: physica status solidi (a), Issue 222, 2025, ISSN 1862-6300
Publisher: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202400689

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Author(s): Zhongyunshen Zhu, Anton Persson, Lars-Erik Wernersson
Published in: Nature Communication, Issue 14, 2023, Page(s) 2530, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-023-38242-w

A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing

Author(s): Zhongyunshen Zhu, Anton E. O. Persson, Lars‐Erik Wernersson
Published in: Advanced Electronic Materials, Issue 11, 2025, ISSN 2199-160X
Publisher: Wiley
DOI: 10.1002/aelm.202400335

RF Characterization of Ferroelectric MOS Capacitors

Author(s): Anton E. O. Persson, Stefan Andrić, Lars Fhager, Lars-Erik Wernersson
Published in: IEEE Electron Device Letters, Issue 45, 2024, Page(s) 1653-1656, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2024.3428971

Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors

Author(s): Gautham Rangasamy, Zhongyunshen Zhu, Lars-Erik Wernersson
Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Issue 10, 2024, Page(s) 8-12, ISSN 2329-9231
Publisher: IEEE
DOI: 10.1109/jxcdc.2024.3355949

Cryogenic Ferroelectricity of HZO Capacitors on a III–V Semiconductor

Author(s): Mamidala Karthik Ram, Hannes Dahlberg, Lars-Erik Wernersson
Published in: IEEE Electron Device Letters, Issue 45, 2024, Page(s) 1827-1830, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2024.3448378

Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon

Author(s): Anton E. O. Persson; Zhongyunshen Zhu; Robin Athle; Lars-Erik Wernersson
Published in: ISSN: 0741-3106, Issue 1, 2022, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2022.3171597

Sensing single domains and individual defects in scaled ferroelectrics

Author(s): Z. Zhu, A. Persson and L.-E. Wernersson
Published in: Science Advances, Issue 9, 2023, Page(s) 7098, ISSN 2375-2548
Publisher: AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.ade7098

Ferroelectric-Antiferroelectric Transition of Hf_1–<i>x</i>Zr_<i>x</i>O₂ on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf_0.2Zr_0.8O₂

Author(s): Lars-Erik Wernersson; Anton Persson; Hannes Dahlberg; Robin Athle
Published in: Applied Electronic Materials, Issue 1, 2022, ISSN 2637-6113
Publisher: ACS
DOI: 10.1021/acsaelm.2c01483

High Current Density Vertical Nanowire TFETs With I₆₀ &gt; 1 <i>μ</i>A/<i>μ</i>m

Author(s): Gautham Rangasamy, Zhongyunshen Zhu, Lars-Erik Wernersson
Published in: IEEE Access, Issue 11, 2024, Page(s) 95692-95696, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2023.3310253

Improved Endurance of Ferroelectric HfxZr1-xO2 Integrated on InAs Using Millisecond Annealing

Author(s): R. Athle, T. Blom, A. Irish, A. Persson, L.-E. Wernersson, R. Timm, M. Borg
Published in: Advanced materials interfaces, Issue 9, 2022, Page(s) 2201038, ISSN 2196-7350
Publisher: wiley
DOI: 10.1002/admi.202201038

Conference proceedings (1)

A 29.5 GHz Rectifier with 14.5 dB Dynamic Power Range for Energy Harvester Using Vertical Nanowire Tunnel FETs

Author(s): Ngoc-Duc Au, Marcus E. Sandberg, Gautham Rangasamy, Lars Ohlsson Fhager, Lars-Erik Wernersson
Published in: 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Issue Page415-418, 2025, Page(s) 415-418
Publisher: IEEE
DOI: 10.23919/eumic61603.2024.10732775