Engineering low power tunnel transistors based on two-dimensional semiconductors

Project Information

2D-LOTTO

Grant agreement ID: 101019828

DOI

10.3030/101019828

EC signature date 20 June 2021

Start date 1 September 2021

End date 31 July 2027

Funded under

• EXCELLENT SCIENCE - European Research Council (ERC)

Total cost

€ 2 499 948,00

EU contribution

€ 2 499 948,00

Coordinated by

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
United Kingdom

Periodic Reporting for period 3 - 2D-LOTTO (Engineering low power tunnel transistors based on two-dimensional semiconductors)

Reporting period: 2024-09-01 to 2026-02-28

Summary of the context and overall objectives of the project

Vertical integration of atomically thin semiconductors for ultra-low power electronics

The metal-oxide semiconductor field-effect transistor (MOSFET) is the most widely used FET. The tunnel FET, an experimental type of transistor, can overcome this limitation by leveraging quantum mechanical tunnelling. The EU-funded 2D-LOTTO project addresses key challenges that limit the realisation of high-performance tunnel FETs. The project deals with integration of low-resistance p- and n-type contacts, high k-dielecric materials and 2D vertical semiconductor heterostructures with ideal interfaces that provide ultra-low power, CMOS-compatible tunnel FETs. The aim is to transform IoT, Big Data and computing.

Work performed from the beginning of the project to the end of the period covered by the report and main results achieved so far

Recent progress on the project has been to realise ultra-clean and low resistance p-type van der Waals contacts (Nature 2022), wafer scale growth of hBN (Nature 2022), ferroelectric heterostructures of MoS2/WS2 (Science 2022), vdW contacts as tunnel barriers for spin injection (Nature Electronics, under revision), and ideal high k-dielectrics for 2D semiconductors and their heterostructures (Nature, under revision). In the last phase of the project, we will integrate these discoveries to realise devices based on heterostructures (initial results are published in Nano Lett.2024).

Progress beyond the state of the art and expected potential impact (including the socio-economic impact and the wider societal implications of the project so far)

The results outlined in the report and some of the papers are considered to be major breakthroughs in the field and therefore by definition are beyond the state-of-the-art.

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