Engineering low power tunnel transistors based on two-dimensional semiconductors

Informazioni relative al progetto

2D-LOTTO

ID dell’accordo di sovvenzione: 101019828

DOI

10.3030/101019828

Data della firma CE 20 Giugno 2021

Data di avvio 1 Settembre 2021

Data di completamento 31 Luglio 2027

Finanziato da

• EXCELLENT SCIENCE - European Research Council (ERC)

Costo totale

€ 2 499 948,00

Contributo UE

€ 2 499 948,00

Coordinato da

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
United Kingdom

Periodic Reporting for period 3 - 2D-LOTTO (Engineering low power tunnel transistors based on two-dimensional semiconductors)

Periodo di rendicontazione: 2024-09-01 al 2026-02-28

Sintesi del contesto e degli obiettivi generali del progetto

Vertical integration of atomically thin semiconductors for ultra-low power electronics

The metal-oxide semiconductor field-effect transistor (MOSFET) is the most widely used FET. The tunnel FET, an experimental type of transistor, can overcome this limitation by leveraging quantum mechanical tunnelling. The EU-funded 2D-LOTTO project addresses key challenges that limit the realisation of high-performance tunnel FETs. The project deals with integration of low-resistance p- and n-type contacts, high k-dielecric materials and 2D vertical semiconductor heterostructures with ideal interfaces that provide ultra-low power, CMOS-compatible tunnel FETs. The aim is to transform IoT, Big Data and computing.

Lavoro eseguito dall’inizio del progetto fino alla fine del periodo coperto dalla relazione e principali risultati finora ottenuti

Recent progress on the project has been to realise ultra-clean and low resistance p-type van der Waals contacts (Nature 2022), wafer scale growth of hBN (Nature 2022), ferroelectric heterostructures of MoS2/WS2 (Science 2022), vdW contacts as tunnel barriers for spin injection (Nature Electronics, under revision), and ideal high k-dielectrics for 2D semiconductors and their heterostructures (Nature, under revision). In the last phase of the project, we will integrate these discoveries to realise devices based on heterostructures (initial results are published in Nano Lett.2024).

Progressi oltre lo stato dell’arte e potenziale impatto previsto (incluso l’impatto socioeconomico e le implicazioni sociali più ampie del progetto fino ad ora)

The results outlined in the report and some of the papers are considered to be major breakthroughs in the field and therefore by definition are beyond the state-of-the-art.

untitled.jpg