Periodic Reporting for period 1 - OPTOHYB (Perovskite/GaAs hybrid structures: towards enhanced optoelectronic properties)
Periodo di rendicontazione: 2021-11-01 al 2023-10-31
OPTOHYB aims to develop and analyze a novel hybrid structure combining III-V materials, specifically commercial GaAs, with halide perovskites (ABX3). The initiative seeks to understand the disorder that creates the carrier localization phenomenon in-depth, with the goal of advancing low-cost and efficient photodetection solutions based on the analysis of ABX3/GaAs hybrid junction and ABX3 conventional structures. Given the global demand for affordable and high-performance devices, OPTOHYB represents a significant stride in harnessing sunlight for eco-friendly, sensitive photodetectors, and solar cells that can detect a broad range of the solar spectrum. This hybrid structure is envisioned as a pivotal active layer in emerging photodetector designs. To achieve this, the project's objectives include refining the fabrication process for the hybrid structure by innovatively depositing perovskite polycrystalline films on GaAs, distinguishing it from conventional samples (on glass and/or single crystals). Comprehensive characterization of the fabricated samples is undertaken to understand the factors contributing to carrier localization phenomena generated by the disorder. This investigation facilitates insights into the spatial, temporal, and efficiency aspects of energy and charge transfer mechanisms. Emphasis is placed on bandgap determination, interfacial energy-level alignment optimization, and both experimental and theoretical analyses of carrier localization phenomena. Concurrently, OPTOHYB is committed to evaluating the performance of the newly developed photodetector prototype through foundational characterization processes.
The experienced researcher (ER) has developed a specific receipt in which he was able to stabilize the perovskite on the GaAs substrates. The ER focuses on the MAPbBr3 and MAPbI3 perovskites. The obtained hybrid structure was characterized deeply from morphological, structural, optical, electrical and photoelectrical point of view. He was able to understand the physical mechanisms behind the adhesion of the perovskite with the GaAs substrates and the origin of disorder inside the structure to elucidate the localization phenomenon, all compared to classical samples (ABX3/glass). The prototype shows an ultra-high stability over 10 months. We found that the spectral photo-response of MAPbBr3/GaAs shows a responsivity peak of R=4.8 mA/W at 870nm (50V, 40µW/cm2) with a rapid response time in the order of micro seconds. As expected, it shows a broadband photodetection character ranging from the visible to the near-infrared regions with an external quantum efficiency EQE of 0.68% at 870 nm. In parallel to the experimental investigations, simulations using SCAPS-1D are carried out on the most instable lead-halide perovskite (MAPbI3). The study explores the impact of different transparent back and front contacts on the detector performance, suggesting that IZO and AZO could effectively replace the gold (Au) and ITO (making the cell less expensive). The proposed solar detector structure (AZO/SnO2/MAPbI3/Spiro-OMeTAD/IZO) demonstrates an impressive efficiency of 30.09%. This particular findings helps to deposit and stabalize the MAPbI3 on GaAs toward a highly efficient AZO/SnO2/GaAs/MAPbI3/Spiro-OMeTAD/IZO photodetector. Results are continuously disseminated through the organization and the participation in the 18th International Summer School on Crystal Growth held at the UNIPR in conjunction with the 20th International Conference on Crystal Growth and Epitaxy in Naples as well as the European Researchers Night event. Such activities have been disseminated/under dissemination through a related LinkedIn page (https://www.linkedin.com/company/optohyb/(si apre in una nuova finestra)) and the website ( https://optohyb.my.canva.site/ ) dedicated to OPTOHYB. In plus, the ER is pending as a member in the Marie Curie Alumni Association (MCAA).
Results is in processing for publication in peer-reviewed/open-access journals. Currently, 4 papers are under drafting and/or submission:
- Air-stable vertical MAPbBr3 / GaAs ¬hybrid heterojunction for broad-band photodetectors: design and physical properties
- Correlation Between Experimental Results and SCAPS-1D Simulations for High-Efficiency MAPbI3 Perovskite Solar Cells Beyond 31%.
- Enhancing the Performance of MAPbI3 Perovskite Solar Cells through In-Situ Passivation by one-step process: Experimental Insights and SCAPS-1D Simulations (submitted to Journal of Materials Chemistry C, RSC)
- Image Processing insights on the morphology of MAPbBr3/GaAs heterojunction
Results is in processing for publication in peer-reviewed/open-access journals. Currently, 4 papers are under drafting and/or submission:
- Air-stable vertical MAPbBr3 / GaAs ¬hybrid heterojunction for broad-band photodetectors: design and physical properties
- Correlation Between Experimental Results and SCAPS-1D Simulations for High-Efficiency MAPbI3 Perovskite Solar Cells Beyond 31%.
- Enhancing the Performance of MAPbI3 Perovskite Solar Cells through In-Situ Passivation by one-step process: Experimental Insights and SCAPS-1D Simulations (submitted to Journal of Materials Chemistry C, RSC)
- Image Processing insights on the morphology of MAPbBr3/GaAs heterojunction
Creating a device based on the integration of perovskite ABX3 on GaAs has the potential to significantly advance the state of the art in optoelectronic technologies. The fusion of these two materials offers a unique combination of properties that can lead to enhanced device performance, novel functionalities, and broader applicability. Let's delve into the potential impacts:
1. Beyond the State of the Art:
• Enhanced Performance: The combination of ABX₃ and GaAs can potentially lead to devices with improved efficiency, broader spectral response, and enhanced stability, surpassing the capabilities of standalone devices based on either material.
• Novel Device Architectures: The integration might pave the way for innovative device designs, such as tandem structures, multi-junction devices, or hybrid systems, offering unprecedented functionalities and capabilities.
• Synergistic Effects: Combining the unique electronic and optical properties of perovskites with the well-established semiconductor properties of GaAs can result in synergistic effects, enabling functionalities not achievable with individual components.
2. Socio-Economic Impact:
• Industry Advancements: The development and commercialization of such advanced devices can foster growth in the optoelectronic industry, driving innovations, investments, and job creation in related sectors.
• Technological Leadership: Achieving breakthroughs in ABX₃/GaAs-based devices can position organizations, research institutions, or countries at the forefront of optoelectronic research and development, bolstering their technological leadership and competitiveness.
• Energy Sector: If applied to photovoltaic devices, the enhanced efficiency and performance can contribute to lowering the cost of solar energy, promoting renewable energy adoption, and potentially reducing greenhouse gas emissions.
3. Wider Societal Implications:
• Environmental Benefits: Leveraging the potential of ABX₃/GaAs devices in energy applications can contribute to sustainable development, mitigating environmental challenges associated with conventional energy sources.
• Accessibility to Technology: Advancements in optoelectronic devices can lead to the proliferation of advanced technologies in various sectors, potentially enhancing healthcare, communication, transportation, and other aspects of daily life.
• Education and Research: Progress in such cutting-edge technologies can stimulate interest and investment in science, engineering, and technology education, fostering a skilled workforce and nurturing future innovators and researchers.
• Ethical Considerations: As with any technological advancement, it's crucial to consider the ethical implications, ensuring responsible development, deployment, and accessibility of the technology, addressing concerns related to privacy, equity, and societal impact.
1. Beyond the State of the Art:
• Enhanced Performance: The combination of ABX₃ and GaAs can potentially lead to devices with improved efficiency, broader spectral response, and enhanced stability, surpassing the capabilities of standalone devices based on either material.
• Novel Device Architectures: The integration might pave the way for innovative device designs, such as tandem structures, multi-junction devices, or hybrid systems, offering unprecedented functionalities and capabilities.
• Synergistic Effects: Combining the unique electronic and optical properties of perovskites with the well-established semiconductor properties of GaAs can result in synergistic effects, enabling functionalities not achievable with individual components.
2. Socio-Economic Impact:
• Industry Advancements: The development and commercialization of such advanced devices can foster growth in the optoelectronic industry, driving innovations, investments, and job creation in related sectors.
• Technological Leadership: Achieving breakthroughs in ABX₃/GaAs-based devices can position organizations, research institutions, or countries at the forefront of optoelectronic research and development, bolstering their technological leadership and competitiveness.
• Energy Sector: If applied to photovoltaic devices, the enhanced efficiency and performance can contribute to lowering the cost of solar energy, promoting renewable energy adoption, and potentially reducing greenhouse gas emissions.
3. Wider Societal Implications:
• Environmental Benefits: Leveraging the potential of ABX₃/GaAs devices in energy applications can contribute to sustainable development, mitigating environmental challenges associated with conventional energy sources.
• Accessibility to Technology: Advancements in optoelectronic devices can lead to the proliferation of advanced technologies in various sectors, potentially enhancing healthcare, communication, transportation, and other aspects of daily life.
• Education and Research: Progress in such cutting-edge technologies can stimulate interest and investment in science, engineering, and technology education, fostering a skilled workforce and nurturing future innovators and researchers.
• Ethical Considerations: As with any technological advancement, it's crucial to consider the ethical implications, ensuring responsible development, deployment, and accessibility of the technology, addressing concerns related to privacy, equity, and societal impact.