High Frequency FET employing 2D materials for gas sensing

Informazioni relative al progetto

HF2ET2D

ID dell’accordo di sovvenzione: 101025770

DOI

10.3030/101025770

Progetto chiuso

Data della firma CE 1 Marzo 2021

Data di avvio 15 Marzo 2021

Data di completamento 14 Marzo 2024

Finanziato da

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Costo totale

€ 259 398,72

Contributo UE

€ 259 398,72

Coordinato da

UNIVERSITAT ROVIRA I VIRGILI
Spain

Periodic Reporting for period 1 - HF2ET2D (High Frequency FET employing 2D materials for gas sensing)

Periodo di rendicontazione: 2021-03-15 al 2024-03-14

Sintesi del contesto e degli obiettivi generali del progetto

The global gas sensor market is expected to expand at a compound annual growth rate of 8.3% from 2020 to 2027, as reported by Grand View Research in its market analysis report. This expansion is sustained by the extremely wide spectrum of current and future applications of gas sensor devices such as indoor or outdoor air quality monitoring -CO2, CH2O, NOx, SO2, volatile organic compounds (VOCs)-, safety at homes (e, g, CO detectors) or in the chemical and petrochemical industry (flammables, toxic gases, VOCs), public security (detection of chemical threats such a warfare agents) or in medical diagnosis via breath analysis (e,g, assessing lung function or early cancer detection by detecting exhaled biomarkers).
While most gas sensor systems used nowadays in the industry and for air quality monitoring (outdoors) are bulky, costly and energy demanding, the next years will see an increasing demand for affordable, miniaturized, low-power, yet durable, reliable, highly sensitive, selective and stable gas sensors. This demand is to be fuelled by the deployment of the 5G technology and the resulting consistent improvement in the functionality and reliability of the IoT in complex environments.
The HF2ET2D aims to support the advance of research in nanotechnology, achieving highly sensitive and selective miniaturized gas sensors, paving the way for their integration in wireless systems in the future. The aim of this project is to develop, fabricate, fully characterise and test high frequency field effect transistors (HF-FETs) able to work as gas sensors. The first challenge is to achieve high quality 2D nanomaterials, reach a desired (low) number of layers and succeed on their functionalization. Moreover, it aims at obtaining the best process of fabrication for each material. The project is centered on novel two-dimensional materials like InSe and PtSe2 because of their interesting electrical and optical properties. Our objective is primary to prepare layered nanosheets by mechanical or liquid-phase exfoliation for resistive gas sensors, then use these results to select the best material for HF-FET gas sensors.
Finally, in order to enhance the performance of the gas sensors, the HF2ET2D project explores hybridization for achieving high selectivity and light excitation as a way to both further improve selectivity and enhance response reversibility and overall sensor stability at room temperature operation (i.e. low-power operation).

Lavoro eseguito dall’inizio del progetto fino alla fine del periodo coperto dalla relazione e principali risultati finora ottenuti

The work conducted throughout the inception to the culmination of the HF2ET2D project, spanning the duration addressed by this report, has yielded significant achievements. Notably, we successfully synthesized two-dimensional materials through exfoliation techniques, encompassing well-known materials like graphene and MoS2, alongside the exploration of PtSe2 and InSe as emerging materials. Leveraging these materials, we undertook comprehensive investigations into their viability for gas sensing applications. Our investigation included the mechanical exfoliation of transition metal dichalcogenide (TMD) heterostructure, hybrid chalcogen nanomaterials by liquid phase exfoliation, demonstrating their potential application as optoelectronic gas sensing at ambient temperatures.
Prior to embarking on the synthesis and fabrication of high-frequency field-effect transistor gas sensors, our preliminary investigations involved the synthesis of 2D materials tailored for chemoresistive gas sensors. Our investigation was conducted on two different substrates: alumina substrates and silicon substrates. We studied the gas sensor performance based on exfoliated MoS2 and InSe on Alumina substrate besides printed graphene on Si substrate, printed MoS2 on Alumina substrate. Additionally, we developed through mechanical exfoliation heterostructures of PtSe2 and MoS2 on silicon substrates, as well as hybrid configurations like InSe and graphene via liquid phase exfoliation, scrutinizing their gas sensing capabilities.
Noteworthy outcomes include the attainment of highly sensitive, selective, and fast-responding optoelectronic gas sensors utilizing exfoliated MoS2 and PtSe2, functioning efficiently at room temperature. Furthermore, we achieved dual selectivity with a low-temperature-operating MoS2 as chemoresistive gas sensor.
As we proceed, efforts are underway to fabricate prototypes of packaging high-frequency field-effect transistors with wire bonding, marking significant progress towards realizing advanced gas sensing technologies.

Progressi oltre lo stato dell’arte e potenziale impatto previsto (incluso l’impatto socioeconomico e le implicazioni sociali più ampie del progetto fino ad ora)

HF2ET2D project achieved progress beyond the current state of the art in gas sensor technology by pioneering the utilization of novel 2D materials. HF2ET2D has not only advanced the frontiers of research in nanotechnology but also achieved groundbreaking synthesis, resulting in highly sensitive and selective miniaturized gas sensors. These advancements will participate in their integration into wireless systems of the future.
In particular, HF2ET2D project has leveraged surface functionalization and hybridization techniques to enhance the performance of gas sensors. This has led to remarkable improvements in selectivity, dynamic response in presence of light excitation, and overall sensor stability under room temperature, thereby facilitating low-power operation.
The socio-economic impact of HF2ET2D project is profound. The research outcomes have showed considerable potential for collaboration across academic and industrial sectors. Notably, the project’s intellectual property is undergoing submission for protection by URV, signalling its potential for commercial exploitation.
Furthermore, the HF2ET2D project has garnered interest from investors after developing the prototype. Additionally, researchers have expressed enthusiasm about leveraging this technology to establish new start-ups, particularly for the development of wireless sensor networks tailored for drone applications.
In summary, the HF2ET2D project stands as testament to innovation, promising significant societal and economic benefits through its pioneering advancements in gas sensor technology and its potential for widespread benefits though its pioneering advancements in gas sensor technology and its potential for widespread commercialization and application in various sectors.

HF2ET2D project is participating to make research more responsible for environment and human safety