Project description
New inspection tool could help spot defects during crystal growth
Gallium nitride (GaN) is a versatile semiconductor used in various applications, including high-brightness light-emitting diodes, solar cells and high-frequency, high-power devices. Its high power density and breakdown voltage limits render the material suitable also for 5G phone base chargers. Funded by the Marie Skłodowska-Curie Actions programme, the GaNSpector project plans to develop an automated, non-destructive inspection tool to help semiconductor manufacturers assess GaN crystal quality. Such a scanner should help identify defects during the growth process, before crystals are further processed. Moreover, it should save resources on slicing and polishing initially defective crystals, thereby reducing time and costs of fabricating epitaxy-ready wafers.
Objective
Gallium Nitride (GaN) and Silicon Carbide (SiC), in particular the 4H hexagonal polytype of SiC (4H-SiC), are wide bandgap semiconductors with significantly superior electrical and thermal characteristics compared to Silicon. Both materials are key enablers for ongoing changes in electric utility and transportation infrastructures. Commercial products that significantly benefit from GaN and SiC semiconductors include solid-state energy converters, power management electronics, power amplifiers, light-emitting diodes, displays, solar cells, lasers, and environmental sensors. Recently, the development of GaN and SiC-based devices has highly accelerated because of their potential for 5G technology. The high defectiveness of produced crystals is one of the principal obstacles to expanding GaN and 4H-SiC use. Therefore, tools for more efficient GaN and 4H-SiC production are highly requested.
The Swiss company Scientific Visual has already developed quality inspection tools for raw Sapphire industrial crystals and is expanding its technology to GaN and 4H-SiC. This project aims to develop an automated non-destructive inspection tool to help semiconductor manufacturers to get insight into raw GaN and 4H-SiC crystal quality. Such a scanner will help improving the growth process and assessing the defectiveness of GaN and 4H-SiC crystals before processing. It will save resources on slicing and polishing initially defective crystals, and thereby time and costs to fabricate epi-ready wafers.
Fields of science (EuroSciVoc)
- engineering and technology materials engineering crystals
- engineering and technology electrical engineering, electronic engineering, information engineering information engineering telecommunications telecommunications networks mobile network 5G
- natural sciences chemical sciences inorganic chemistry post-transition metals
- natural sciences physical sciences electromagnetism and electronics semiconductivity
Keywords
Project’s keywords as indicated by the project coordinator. Not to be confused with the EuroSciVoc taxonomy (Fields of science)
Project’s keywords as indicated by the project coordinator. Not to be confused with the EuroSciVoc taxonomy (Fields of science)
Programme(s)
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
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H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions
MAIN PROGRAMME
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H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility
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Topic(s)
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Funding Scheme
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF)
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Call for proposal
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
(opens in new window) H2020-MSCA-IF-2020
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Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.
1006 Lausanne
Switzerland
The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.