Neuromorphic computing Enabled by Heavily doped semiconductor Optics

Projektinformationen

NEHO

ID Finanzhilfevereinbarung: 101046329

DOI

10.3030/101046329

Projekt abgeschlossen

EK-Unterschriftsdatum 13 Dezember 2022

Startdatum 1 Januar 2023

Enddatum 30 Juni 2026

Finanziert unter

• The European Innovation Council (EIC)

Gesamtkosten

€ 2 982 185,00

EU-Beitrag

€ 2 982 184,75

Koordiniert durch

FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA
Italy

Periodic Reporting for period 1 - NEHO (Neuromorphic computing Enabled by Heavily doped semiconductor Optics)

Berichtszeitraum: 2023-01-01 bis 2023-12-31

Zusammenfassung vom Kontext und den Gesamtzielen des Projekts

NEHO will develop a novel photonic integrated circuit platform that enables ultrafast and low-energy consumption neuromorphic information processes by means of a newly developed nonlinear photon-plasmon semiconductor technology at mid-infrared wavelengths (8-12 μm). NEHO vision will be achieved by unconventional use of semiconductors to optimize and control plasmonic effects that will provide the optcial nonlinearity required to implement the functionalities of an artificial neuron. NEHO's optical neuron will be the building block for the realization of ultrafast optical neural networks. We will combine the flexibility of field-effect devices realized on semiconductors with the nanoscale nature of plasmonic processes so to enable the reconfigurability of the nonlinear optical coefficient at each node of the network, simply obtained by controlling DC electric potential levels. At the heart of NEHO is the idea of exploiting the rich electron dynamics of semiconductors. Doped semiconductors undergo an interesting transition from the size-quantization regime to the classical regime of plasmon oscillations. This transition region can exhibit strong nonlocal and nonlinear optical response due to a large variety of electron-electron interactions. The decrease in electron density induced on the semiconductor surface by an external bias can be used to modulate the nonlinear response strength. This unprecedented feature will be used to leverage the hardware implementation of a neural network into the development of new machine learning optimization techniques, including the optimization of the nonlinear activation function to different tasks. This extra degree of freedom will offer tremendous benefits for a large variety of machine learning applications.

Arbeit, die ab Beginn des Projekts bis zum Ende des durch den Bericht erfassten Berichtszeitraums geleistet wurde, und die wichtigsten bis dahin erzielten Ergebnisse

In the first 12 months of the project development, the consortium has performed the following main activities:
- Grown the a batch of doped InGaAs wafers with different oping levels and characterized
- Developed and implemented third order hydrodynamic nonlinearities in a finite-element method numerical solver
- Performed measurements of nonlinear coefficients as a function of doping
- Investigating the effects of semiconductor nonlinearities in an ideal neural-network framework.
- Numerically investigated field-effect in degenerate semiconductors
- Developed possible experiments implementation of "MOSFET" structure for the extra control of the nonlinearities.

Results obtained so far have been presented to international scientific conferences and submitted to peer-reviewed journals.
At the start of project the consortium coordinated for a joint press release which offered NEHO ample coverage in mainstream media.

Fortschritte, die über den aktuellen Stand der Technik hinausgehen und voraussichtliche potenzielle Auswirkungen (einschließlich der bis dato erzielten sozioökonomischen Auswirkungen und weiter gefassten gesellschaftlichen Auswirkungen des Projekts)

By virtue of its foundational approach and high translational appeal, NEHO is expected to provide new scientific knowledge and new technological breakthroughs able to establish new paradigms in ultrafast information processing technology.
NEHO is providing the scientific community with a deep understanding of hydrodynamic nonlinearities in heavily doped semiconductors and is exploring a new mechanism for reconfiguring nonlinear optical susceptibilities through fields effects applied to nonlinear optics.
By proposing an all-semiconductor waveguide design, we are providing a route for photonic integration industry at mid-IR wavelengths

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