Descripción del proyecto
Sistemas láser de alto rendimiento desarrollados con obleas de germanio
Los láseres de emisión de superficie de cavidad vertical (VCSEL, por sus siglas en inglés) son un tipo de diodos láser semiconductores con emisión de haz láser perpendicular desde la superficie superior. Son un componente básico en varios productos láser. La mayoría de los VCSEL incluyen capas creadas en sustratos de arseniuro de galio, pero hace poco el germanio (Ge) ha atraído la atención de los investigadores como candidato a sustrato. El proyecto PhotoGeNIC, financiado con fondos europeos, tiene como objetivo desarrollar VCSEL basados en Ge mediante la epitaxia de haces moleculares y la deposición química en fase de vapor organometálico. El principal reto consiste en lograr un cristal de gran calidad a partir de las capas cultivadas, disminuir las dislocaciones de desajuste (defectos que degradan gravemente las propiedades del material) y aumentar la eficacia cuántica del dispositivo láser.
Objetivo
The project scope is to develop an innovative technology of germanium (Ge)-based VCSEL. The main objective is to develop a Ge-VCSEL epi-growth by MOCVD and MBE techniques and processing of high performance and reliable lasers to be integrated in 3D camera and LiDAR demonstrators. The key challenge is to achieve high crystal quality of grown layers while taking the advantage of a better crystallographic lattice sameness between Ge and Al gallium arsenide (GaAs), which enables to decrease misfit defects density and in consequence to increase the quantum efficiency of the device. Several characterisation methods will be used as X-ray diffraction and topography, depth high resolution SIMS, electron microscopy (SEM/TEM), atomic force microscopy, reflectance, PL mapping, and others. Each growing campaign will be concluded by processing of conventional VCSELs (GaAs-based) and VCSELs on Ge which will allow the verification of VCSELs parameters and comparison of both type devices. The VCSEL technology drives a dynamic market with constant need for innovative solutions. Demonstration of high performing devices of Ge-on-Si can unlock potentially large markets from optical data communications to imaging, lighting and displays, to the manufacturing sector, to life sciences, health care, security and safety. In commercial applications, the performance, costs and the strong reduction of toxic elements will be very important factors to drive a replacement of the current technology. The Ge, offering a higher yield and less production losses due to higher uniformity at larger size wafer, is promised to lower the environmental burden compared to expensive GaAs substrate. As the VCSEL sector is developing dynamically with laser production expected to triple in the next five years, the project, with its innovative Ge-VCSEL solution, has the potential to significantly contribute to the reduction of lasers’ global usage of toxic materials, and improve the device performances.
Ámbito científico
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensors
- natural sciencesphysical sciencesopticsmicroscopyelectron microscopy
- natural scienceschemical sciencesinorganic chemistrypost-transition metals
- natural scienceschemical sciencesinorganic chemistrymetalloids
- natural sciencesphysical sciencesopticslaser physics
Palabras clave
Programa(s)
Convocatoria de propuestas
HORIZON-CL4-2021-DIGITAL-EMERGING-01
Consulte otros proyectos de esta convocatoriaRégimen de financiación
HORIZON-RIA - HORIZON Research and Innovation ActionsCoordinador
9500 Villach
Austria
Organización definida por ella misma como pequeña y mediana empresa (pyme) en el momento de la firma del acuerdo de subvención.