Descrizione del progetto
Sistemi laser ad alte prestazioni cresciuti su wafer di germanio
I laser a cavità verticale a emissione superficiale (VCSEL, Vertical-Cavity Surface-Emitting Lasers) sono un tipo di diodi laser semiconduttori con emissioni del fascio perpendicolari che partono dalla superficie superiore e rappresentano un componente chiave in vari prodotti laser. Gran parte dei VCSEL sono cresciuti su substrati di arseniuro di gallio, ma di recente il germanio (Ge) ha attirato molta attenzione come candidato per il substrato. Il progetto PhotoGeNIC, finanziato dall’UE, si propone di crescere VCSEL sul germanio avvalendosi di una tecnica epitassiale del fascio molecolare e della deposizione chimica di vapore metallo-organica. La sfida chiave consiste nel conseguire un’elevata qualità degli strati cresciuti, ridurre le dislocazioni di misfit (difetti che degradano gravemente le proprietà del materiale) e aumentare l’efficienza quantistica del dispositivo laser.
Obiettivo
The project scope is to develop an innovative technology of germanium (Ge)-based VCSEL. The main objective is to develop a Ge-VCSEL epi-growth by MOCVD and MBE techniques and processing of high performance and reliable lasers to be integrated in 3D camera and LiDAR demonstrators. The key challenge is to achieve high crystal quality of grown layers while taking the advantage of a better crystallographic lattice sameness between Ge and Al gallium arsenide (GaAs), which enables to decrease misfit defects density and in consequence to increase the quantum efficiency of the device. Several characterisation methods will be used as X-ray diffraction and topography, depth high resolution SIMS, electron microscopy (SEM/TEM), atomic force microscopy, reflectance, PL mapping, and others. Each growing campaign will be concluded by processing of conventional VCSELs (GaAs-based) and VCSELs on Ge which will allow the verification of VCSELs parameters and comparison of both type devices. The VCSEL technology drives a dynamic market with constant need for innovative solutions. Demonstration of high performing devices of Ge-on-Si can unlock potentially large markets from optical data communications to imaging, lighting and displays, to the manufacturing sector, to life sciences, health care, security and safety. In commercial applications, the performance, costs and the strong reduction of toxic elements will be very important factors to drive a replacement of the current technology. The Ge, offering a higher yield and less production losses due to higher uniformity at larger size wafer, is promised to lower the environmental burden compared to expensive GaAs substrate. As the VCSEL sector is developing dynamically with laser production expected to triple in the next five years, the project, with its innovative Ge-VCSEL solution, has the potential to significantly contribute to the reduction of lasers’ global usage of toxic materials, and improve the device performances.
Campo scientifico
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensors
- natural sciencesphysical sciencesopticsmicroscopyelectron microscopy
- natural scienceschemical sciencesinorganic chemistrypost-transition metals
- natural scienceschemical sciencesinorganic chemistrymetalloids
- natural sciencesphysical sciencesopticslaser physics
Parole chiave
Programma(i)
Argomento(i)
Invito a presentare proposte
HORIZON-CL4-2021-DIGITAL-EMERGING-01
Vedi altri progetti per questo bandoMeccanismo di finanziamento
HORIZON-RIA - HORIZON Research and Innovation ActionsCoordinatore
9500 Villach
Austria
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