Description du projet
Des systèmes laser à haute performance développés sur des plaquettes de germanium
Les lasers à émission de surface à cavité verticale (VCSEL) sont un type de diodes laser à semi-conducteurs dont le faisceau laser est émis perpendiculairement à la surface supérieure. Ils constituent un composant essentiel de différents produits laser. La plupart des VCSEL sont développés sur des substrats d’arséniure de gallium, mais récemment, le germanium (Ge) a attiré l’attention des chercheurs en tant que substrat candidat. Le projet PhotoGeNIC, financé par l’UE, vise à faire croître des VCSEL sur du germanium en utilisant l’épitaxie par faisceau moléculaire et le dépôt chimique en phase vapeur de type métallo-organique. Le principal défi est d’obtenir une qualité cristalline élevée des couches cultivées, de réduire les dislocations inadaptées (défauts qui dégradent gravement les propriétés du matériau) et d’augmenter l’efficacité quantique du dispositif laser.
Objectif
The project scope is to develop an innovative technology of germanium (Ge)-based VCSEL. The main objective is to develop a Ge-VCSEL epi-growth by MOCVD and MBE techniques and processing of high performance and reliable lasers to be integrated in 3D camera and LiDAR demonstrators. The key challenge is to achieve high crystal quality of grown layers while taking the advantage of a better crystallographic lattice sameness between Ge and Al gallium arsenide (GaAs), which enables to decrease misfit defects density and in consequence to increase the quantum efficiency of the device. Several characterisation methods will be used as X-ray diffraction and topography, depth high resolution SIMS, electron microscopy (SEM/TEM), atomic force microscopy, reflectance, PL mapping, and others. Each growing campaign will be concluded by processing of conventional VCSELs (GaAs-based) and VCSELs on Ge which will allow the verification of VCSELs parameters and comparison of both type devices. The VCSEL technology drives a dynamic market with constant need for innovative solutions. Demonstration of high performing devices of Ge-on-Si can unlock potentially large markets from optical data communications to imaging, lighting and displays, to the manufacturing sector, to life sciences, health care, security and safety. In commercial applications, the performance, costs and the strong reduction of toxic elements will be very important factors to drive a replacement of the current technology. The Ge, offering a higher yield and less production losses due to higher uniformity at larger size wafer, is promised to lower the environmental burden compared to expensive GaAs substrate. As the VCSEL sector is developing dynamically with laser production expected to triple in the next five years, the project, with its innovative Ge-VCSEL solution, has the potential to significantly contribute to the reduction of lasers’ global usage of toxic materials, and improve the device performances.
Champ scientifique
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensors
- natural sciencesphysical sciencesopticsmicroscopyelectron microscopy
- natural scienceschemical sciencesinorganic chemistrypost-transition metals
- natural scienceschemical sciencesinorganic chemistrymetalloids
- natural sciencesphysical sciencesopticslaser physics
Mots‑clés
Programme(s)
Régime de financement
HORIZON-RIA - HORIZON Research and Innovation ActionsCoordinateur
9500 Villach
Autriche
L’entreprise s’est définie comme une PME (petite et moyenne entreprise) au moment de la signature de la convention de subvention.