Low power spintronics wireless autonomous node (SWAN) integrated circuits developed via spintronics technology accelerator platform

Información del proyecto

SWAN-on-chip

Identificador del acuerdo de subvención: 101070287

DOI

10.3030/101070287

Fecha de la firma de la CE 23 Junio 2022

Fecha de inicio 1 Octubre 2022

Fecha de finalización 30 Septiembre 2026

Financiado con arreglo a

• Digital, Industry and Space

Coste total

€ 3 180 372,50

Aportación de la UE

€ 3 180 372,25

Coordinado por

INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY
Portugal

Periodic Reporting for period 1 - SWAN-on-chip (Low power spintronics wireless autonomous node (SWAN) integrated circuits developed via spintronics technology accelerator platform)

Período documentado: 2022-10-01 hasta 2024-03-31

Resumen del contexto y de los objetivos generales del proyecto

Wireless sensor networks (WSN) are the cornerstone infrastructure required for the implementation of the “Internet of Things” (IoT) and “Edge computing” paradigms, with a requirement for low-energy autonomous sensor nodes, capable of efficiently gathering information for processing at a central hub. WSNs are also an interesting test case for emerging technologies due to the requirement for scalable, low power solutions for the sensor nodes. These sensor nodes will typically have several different modules providing a range of functions, from data capture, intelligent processing, storage to data transmission and security data security.
The Spintronics Wireless Autonomous Node concept is designed to promote different spintronics technologies in the context of wireless sensor networks. In the SWAN-on-chip project, four key elements which are of interest to wireless sensor nodes were selected, including magnetic field sensor, wireless power charger, wake-up receiver and radio-frequency detector.
In addition to exploring and developing these emerging technologies, the SWAN-on-chip project aims to use the SWAN concept as a test case for the spintronics technology accelerator framework. The framework was designed to bring together actors throughout the spintronics value chain, i.e. simulations and models, nanofabrication, device characterisation, electrical engineers, and industrial partners. By establishing a European-wide community, and demonstrating the development of hybrid CMOS spin-chips, individual technologies could be promoted as well as generating a pathway for future spintronics technologies.

Trabajo realizado desde el comienzo del proyecto hasta el final del período abarcado por el informe y los principales resultados hasta la fecha

The first 18 months of the SWAN-on-chip project have been focussed on developing, characterising and selecting the final spintronics technologies which will be integrated for the final spin-chip modules. Using a combination of micromagnetic, macrospin and Spice modelling, realistic simulations have been developed to explore spintronics in a range of different application scenarios. Optimisation of material and nanofabrication processes has led to a significant improvement in terms of their device reproducibility and yield. Experimentally, device characterisation of a range of spintronic technologies has identified the key performance indicators in the context of sensing, energy harvesting and radio-frequency detection. Integrated circuits have been designed which are tailored for the individual spintronic technologies and will be ready for integration of the spintronic/CMOS hybrid spin chips in the second half of the project.

Avances que van más allá del estado de la técnica e impacto potencial esperado (incluida la repercusión socioeconómica y las implicaciones sociales más amplias del proyecto hasta la fecha)

Extensive work has been carried out exploring THz dynamics in antiferromagnets, with the goal of integrating them as part of a magnetic tunnel junctions.
Exploration of amorphous magnetic materials integrated as the free layer of a magnetic tunnel junction, and the role this has on the dynamics of non-homogeneous magnetisation textures such as magnetic vortices.
Exploring the memristive properties of magnetic tunnel junctions allowing for two exiting phenomena into a single device.
Investigating non-hermiticity in coupled spin torque oscillators.
Investigating spintronic accelerometers using coupled magnetic tunnel junctions