Low power spintronics wireless autonomous node (SWAN) integrated circuits developed via spintronics technology accelerator platform

Informacje na temat projektu

SWAN-on-chip

Identyfikator umowy o grant: 101070287

DOI

10.3030/101070287

Data podpisania przez KE 23 Czerwca 2022

Data rozpoczęcia 1 Października 2022

Data zakończenia 30 Września 2026

Finansowanie w ramach

• Digital, Industry and Space

Koszt całkowity

€ 3 180 372,50

Wkład UE

€ 3 180 372,25

Koordynowany przez

INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY
Portugal

Periodic Reporting for period 1 - SWAN-on-chip (Low power spintronics wireless autonomous node (SWAN) integrated circuits developed via spintronics technology accelerator platform)

Okres sprawozdawczy: 2022-10-01 do 2024-03-31

Podsumowanie kontekstu i ogólnych celów projektu

Wireless sensor networks (WSN) are the cornerstone infrastructure required for the implementation of the “Internet of Things” (IoT) and “Edge computing” paradigms, with a requirement for low-energy autonomous sensor nodes, capable of efficiently gathering information for processing at a central hub. WSNs are also an interesting test case for emerging technologies due to the requirement for scalable, low power solutions for the sensor nodes. These sensor nodes will typically have several different modules providing a range of functions, from data capture, intelligent processing, storage to data transmission and security data security.
The Spintronics Wireless Autonomous Node concept is designed to promote different spintronics technologies in the context of wireless sensor networks. In the SWAN-on-chip project, four key elements which are of interest to wireless sensor nodes were selected, including magnetic field sensor, wireless power charger, wake-up receiver and radio-frequency detector.
In addition to exploring and developing these emerging technologies, the SWAN-on-chip project aims to use the SWAN concept as a test case for the spintronics technology accelerator framework. The framework was designed to bring together actors throughout the spintronics value chain, i.e. simulations and models, nanofabrication, device characterisation, electrical engineers, and industrial partners. By establishing a European-wide community, and demonstrating the development of hybrid CMOS spin-chips, individual technologies could be promoted as well as generating a pathway for future spintronics technologies.

Prace wykonane od początku projektu do końca okresu sprawozdawczego oraz najważniejsze dotychczasowe rezultaty

The first 18 months of the SWAN-on-chip project have been focussed on developing, characterising and selecting the final spintronics technologies which will be integrated for the final spin-chip modules. Using a combination of micromagnetic, macrospin and Spice modelling, realistic simulations have been developed to explore spintronics in a range of different application scenarios. Optimisation of material and nanofabrication processes has led to a significant improvement in terms of their device reproducibility and yield. Experimentally, device characterisation of a range of spintronic technologies has identified the key performance indicators in the context of sensing, energy harvesting and radio-frequency detection. Integrated circuits have been designed which are tailored for the individual spintronic technologies and will be ready for integration of the spintronic/CMOS hybrid spin chips in the second half of the project.

Innowacyjność oraz oczekiwany potencjalny wpływ (w tym dotychczasowe znaczenie społeczno-gospodarcze i szersze implikacje społeczne projektu)

Extensive work has been carried out exploring THz dynamics in antiferromagnets, with the goal of integrating them as part of a magnetic tunnel junctions.
Exploration of amorphous magnetic materials integrated as the free layer of a magnetic tunnel junction, and the role this has on the dynamics of non-homogeneous magnetisation textures such as magnetic vortices.
Exploring the memristive properties of magnetic tunnel junctions allowing for two exiting phenomena into a single device.
Investigating non-hermiticity in coupled spin torque oscillators.
Investigating spintronic accelerometers using coupled magnetic tunnel junctions