Low power spintronics wireless autonomous node (SWAN) integrated circuits developed via spintronics technology accelerator platform

Informazioni relative al progetto

SWAN-on-chip

ID dell’accordo di sovvenzione: 101070287

DOI

10.3030/101070287

Data della firma CE 23 Giugno 2022

Data di avvio 1 Ottobre 2022

Data di completamento 30 Settembre 2026

Finanziato da

• Digital, Industry and Space

Costo totale

€ 3 180 372,50

Contributo UE

€ 3 180 372,25

Coordinato da

INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY
Portugal

Periodic Reporting for period 1 - SWAN-on-chip (Low power spintronics wireless autonomous node (SWAN) integrated circuits developed via spintronics technology accelerator platform)

Periodo di rendicontazione: 2022-10-01 al 2024-03-31

Sintesi del contesto e degli obiettivi generali del progetto

Wireless sensor networks (WSN) are the cornerstone infrastructure required for the implementation of the “Internet of Things” (IoT) and “Edge computing” paradigms, with a requirement for low-energy autonomous sensor nodes, capable of efficiently gathering information for processing at a central hub. WSNs are also an interesting test case for emerging technologies due to the requirement for scalable, low power solutions for the sensor nodes. These sensor nodes will typically have several different modules providing a range of functions, from data capture, intelligent processing, storage to data transmission and security data security.
The Spintronics Wireless Autonomous Node concept is designed to promote different spintronics technologies in the context of wireless sensor networks. In the SWAN-on-chip project, four key elements which are of interest to wireless sensor nodes were selected, including magnetic field sensor, wireless power charger, wake-up receiver and radio-frequency detector.
In addition to exploring and developing these emerging technologies, the SWAN-on-chip project aims to use the SWAN concept as a test case for the spintronics technology accelerator framework. The framework was designed to bring together actors throughout the spintronics value chain, i.e. simulations and models, nanofabrication, device characterisation, electrical engineers, and industrial partners. By establishing a European-wide community, and demonstrating the development of hybrid CMOS spin-chips, individual technologies could be promoted as well as generating a pathway for future spintronics technologies.

Lavoro eseguito dall’inizio del progetto fino alla fine del periodo coperto dalla relazione e principali risultati finora ottenuti

The first 18 months of the SWAN-on-chip project have been focussed on developing, characterising and selecting the final spintronics technologies which will be integrated for the final spin-chip modules. Using a combination of micromagnetic, macrospin and Spice modelling, realistic simulations have been developed to explore spintronics in a range of different application scenarios. Optimisation of material and nanofabrication processes has led to a significant improvement in terms of their device reproducibility and yield. Experimentally, device characterisation of a range of spintronic technologies has identified the key performance indicators in the context of sensing, energy harvesting and radio-frequency detection. Integrated circuits have been designed which are tailored for the individual spintronic technologies and will be ready for integration of the spintronic/CMOS hybrid spin chips in the second half of the project.

Progressi oltre lo stato dell’arte e potenziale impatto previsto (incluso l’impatto socioeconomico e le implicazioni sociali più ampie del progetto fino ad ora)

Extensive work has been carried out exploring THz dynamics in antiferromagnets, with the goal of integrating them as part of a magnetic tunnel junctions.
Exploration of amorphous magnetic materials integrated as the free layer of a magnetic tunnel junction, and the role this has on the dynamics of non-homogeneous magnetisation textures such as magnetic vortices.
Exploring the memristive properties of magnetic tunnel junctions allowing for two exiting phenomena into a single device.
Investigating non-hermiticity in coupled spin torque oscillators.
Investigating spintronic accelerometers using coupled magnetic tunnel junctions