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Publicaciones

Exploring Compact Modeling of SiGe HBTs in Sub-THz Range With HICUM

Autores: S. R. Panda, T. Zimmer, A. Chakravorty, N. Derrier and S. Fregonese
Publicado en: IEEE Transactions on Electron Devices, 2024, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2023.3321017

A SiGe BiCMOS D-Band LNA with Gain Boosted by Local Feedback in Common-Emitter Transistors

Autores: Guglielmo De Filippi, Lorenzo Piotto, Andrea Bilato, Andrea Mazzanti
Publicado en: 2023
Editor: 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
DOI: 10.1109/RFIC54547.2023.10186168

Low-noise Si/SiGe HBT for LEO satellite user terminals in Ku-Ka bands

Autores: A. Gauthier, E. Brezza, A. Montagné, N. Guitard, J. Azevedo Goncalves, M. Buczko, S. Jan, N. Derrier, D. Céli, C. Deglise-Favre, J. Ma, H. Audouin, F. Deprat, D. Ristoiu, L. Berthier, L. Clément, B. Grelaud, C. Rougier, P. Chevalier
Publicado en: 2023
Editor: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
DOI: 10.1109/BCICTS54660.2023.10310961

Low frequency noise study of X-ray irradiated Si/SiGe:C BiCMOS technology bipolar transistors

Autores: A Adebabay Belie, J El Beyrouthy, Fabien Pascal, J Boch, T Maraine, M Bouhouche, Bruno Sagnes, S Haendler, P Chevalier, D Gloria
Publicado en: 2023
Editor: 26th International Conference on Noise and Fluctuations

A 20mW 130-175GHz Phase Shifter with Meandered λ/2 TLINEs in BiCMOS 55nm

Autores: Lorenzo Piotto, Guglielmo De Filippi, Andrea Bilato and Andrea Mazzanti
Publicado en: 2023
Editor: IEEE 49th European Solid State Circuits Conference (ESSCIRC)
DOI: 10.1109/ESSCIRC59616.2023.10268727

A D-Band Low-Noise-Amplifier in SiGe BiCMOS with Broadband Multi-Resonance Matching Networks

Autores: Guglielmo De Filippi, Lorenzo Piotto, Andrea Bilato, Andrea Mazzanti
Publicado en: 2023
Editor: 2023 18th European Microwave Integrated Circuits Conference (EuMIC)
DOI: 10.23919/EuMIC58042.2023.10288669

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