Sustainable tecHnologies enablIng Future Telecommunication applications

Informazioni relative al progetto

SHIFT

ID dell’accordo di sovvenzione: 101096256

DOI

10.3030/101096256

Data della firma CE 9 Dicembre 2022

Data di avvio 1 Dicembre 2022

Data di completamento 30 Novembre 2025

Finanziato da

• Digital, Industry and Space

Costo totale

€ 67 327 514,51

Contributo UE

€ 18 700 384,32

Coordinato da

STMICROELECTRONICS FRANCE
France

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Websites, patent fillings, videos etc. (1)

SHIFT project website

Documents, reports (1)

SHIFT Management Plan

Pubblicazioni

Conference proceedings (16)

Effects of X-ray and Gamma irradiation on advanced Si/SiGe:C HBTs DC characteristics

Autori: J. El Beyrouthy , B. Sagnes , F. Pascal , A. Hoffmann , A. Ayenew , J. Boch , T. Maraine , S. Haendler , P. Chevalier , D. Gloria , M. Bouhouche
Pubblicato in: 2023
Editore: RADECS 2023

What causes the fluctuations in fmax with respect to frequency?

Autori: S. Fregonese, T. Zimmer
Pubblicato in: 2023
Editore: BipAK

Compact D-Band Passive Phase Shifters with Fine and Coarse Control Steps in BiCMOS-55nm

Autori: Lorenzo Piotto, Guglielmo De Filippi, Mahmoud M. Pirbazari, Andrea Mazzanti
Pubblicato in: 2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2024
Editore: IEEE
DOI: 10.1109/SiRF59913.2024.10438529

Total Ionizing Dose in 130-nm and 55-nm SiGe:C Heterojunction Bipolar Transistors

Autori: A. Adebabay Belie, F. Pascal, J. Boch, T. Maraine, A.Hoffmann, M. Bouhouche, B. Sagnes, P. Chevalier, D. Gloria
Pubblicato in: 2024
Editore: RADECS 2024, Conference on radiation and its Effects on Components and Systems

Design and Performance of Slow-wave Microstrip Lines in BiCMOS Technology

Autori: Leonardo A. G. Gomes, João Lé, Ariana L. C. Serrano, Gustavo P. Rehder, Cédric Durand, Mohammed Wehbi, Philippe Ferrari
Pubblicato in: 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 2024
Editore: IEEE
DOI: 10.23919/EuMIC61603.2024.10732853

A SiGe BiCMOS D-Band LNA with Gain Boosted by Local Feedback in Common-Emitter Transistors

Autori: Guglielmo De Filippi, Lorenzo Piotto, Andrea Bilato, Andrea Mazzanti
Pubblicato in: 2023
Editore: 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
DOI: 10.1109/RFIC54547.2023.10186168

Low-noise Si/SiGe HBT for LEO satellite user terminals in Ku-Ka bands

Autori: A. Gauthier, E. Brezza, A. Montagné, N. Guitard, J. Azevedo Goncalves, M. Buczko, S. Jan, N. Derrier, D. Céli, C. Deglise-Favre, J. Ma, H. Audouin, F. Deprat, D. Ristoiu, L. Berthier, L. Clément, B. Grelaud, C. Rougier, P. Chevalier
Pubblicato in: 2023
Editore: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
DOI: 10.1109/BCICTS54660.2023.10310961

Challenges in characterizing BiCMOS SiGe HBT technologies for FOM evaluation and compact modelling

Autori: Sebastien Fregonese, Magali de Matos, Thomas Zimmer
Pubblicato in: 2024
Editore: The 19th ARTFG On-Wafer Users Forum-EuMW-2024 Conference

Challenges of on-wafer S-parameter characterization of advanced SiGe HBTs at very high frequencies

Autori: S. Fregonese, T. Zimmer
Pubblicato in: 2024
Editore: Workshop EuMW 2023

Low frequency noise study of X-ray irradiated Si/SiGe:C BiCMOS technology bipolar transistors

Autori: A Adebabay Belie, J El Beyrouthy, Fabien Pascal, J Boch, T Maraine, M Bouhouche, Bruno Sagnes, S Haendler, P Chevalier, D Gloria
Pubblicato in: 2023
Editore: 26th International Conference on Noise and Fluctuations

A 20mW 130-175GHz Phase Shifter with Meandered λ/2 TLINEs in BiCMOS 55nm

Autori: Lorenzo Piotto, Guglielmo De Filippi, Andrea Bilato and Andrea Mazzanti
Pubblicato in: 2023
Editore: IEEE 49th European Solid State Circuits Conference (ESSCIRC)
DOI: 10.1109/ESSCIRC59616.2023.10268727

A D-Band Low-Noise-Amplifier in SiGe BiCMOS with Broadband Multi-Resonance Matching Networks

Autori: Guglielmo De Filippi, Lorenzo Piotto, Andrea Bilato, Andrea Mazzanti
Pubblicato in: 2023
Editore: 2023 18th European Microwave Integrated Circuits Conference (EuMIC)
DOI: 10.23919/EuMIC58042.2023.10288669

Comparaison des Modles de Calibrage pour l'extraction des performances RF d'un Transistor HBT SiGE en haute frquence

Autori: T. Bouzar, P. Billy, J. Varghese, J. D. Arnould, M. De Matos, T. Zimmer, S. Fregonese
Pubblicato in: 2023
Editore: 1ere Journées techniques Radio-Frequency Test Facility Network

Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited)

Autori: Soumya Ranjan Panda, Philippine Billy, Alexis Gauthier, Nicolas Guitard, Pascal Chevalier, Magali De Matos, Thomas Zimmer, Sebastien Fregonese
Pubblicato in: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024
Editore: IEEE
DOI: 10.1109/EDTM58488.2024.10511770

A Compensated Finite-Ground Elevated Coplanar Waveguide Interconnect Strategy for InP Based Integrated Circuits Above 100 GHz

Autori: T. K. Johansen, R. Hersent, V. Nodjiadjim, M. Riet, C. Mismer, B. Ardouin
Pubblicato in: 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 2024
Editore: IEEE
DOI: 10.23919/EuMIC61603.2024.10732365

A multi band flexible N-path filter suited for non-contiguous channel aggregation

Autori: Chadi Jabbour
Pubblicato in: 2024 25th International Symposium on Quality Electronic Design (ISQED), 2024
Editore: IEEE
DOI: 10.1109/ISQED60706.2024.10528677

Peer reviewed articles (4)

Exploring Compact Modeling of SiGe HBTs in Sub-THz Range With HICUM

Autori: S. R. Panda, T. Zimmer, A. Chakravorty, N. Derrier and S. Fregonese
Pubblicato in: IEEE Transactions on Electron Devices, 2024, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2023.3321017

Establishing On-Wafer Calibration Standards for the 16-Term Error Model: Application to Silicon High-Frequency Transistor Characterization

Autori: Sebastien Fregonese, Thomas Zimmer
Pubblicato in: IEEE Journal of Microwaves, Numero 4, 2024, ISSN 2692-8388
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/JMW.2024.3413865

InP DHBT 200-GSa/s Large Output Swing AMUX-Driver Using Transimpedance Stage Loading for 200-Gbaud-and-Beyond Optical Transceivers

Autori: Romain Hersent, Agnieszka Konczykowska, Virginie Nodjiadjim, Nil Davy, Muriel Riet, Colin Mismer, Filipe Jorge, Fabrice Blache, Michel Goix, Qian Hu, Marina Deng, Chhandak Mukherjee, Cristell Maneux, Mengyue Xu, Yuntao Zhu, Lifeng Chen, Ziyang Hu, Xinlun Cai, Haïk Mardoyan, Jérémie Renaudier, Bertrand Ardouin
Pubblicato in: IEEE Transactions on Microwave Theory and Techniques, 2025, ISSN 0018-9480
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TMTT.2025.3569647

SiGe BiCMOS D-Band Heterodyne Power Mixer With Back-Off Efficiency Enhanced by Current Clamping

Autori: Andrea Bilato, Ibrahim Petricli, Andrea Mazzanti
Pubblicato in: IEEE Solid-State Circuits Letters, Numero 7, 2023, ISSN 2573-9603
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/LSSC.2023.3332766

Book chapters (9)

Dband Phased Array Antenna Module for 5G Backhaul

Autori: A. Fonte, S. Moscato, R. Moro, A. Pallotta, A. Mazzanti, A. Bilato, G. De Filippi, L. Piotto, F. Centurelli, P. Monsurr, H. Sadeghi Chameh, P. Tommasino, A. Trifiletti, D. Lodi Rizzini, F. Tesolin, S. M. Dartizio, and S. Levantino
Pubblicato in: 2024
Editore: RiverPublishers

KaBand GaNonSiC Power Amplifier for High EIRP Satellite Phased Antenna Array

Autori: Francesco Manni, Paolo Colantonio, Rocco Giofr, Ernesto Limiti, Patrick Ettore Longhi, Steven Caicedo Mejillones, Stefano Moscato, and Alessandro Fonte
Pubblicato in: 2024
Editore: RiverPublishers

Analog Multiplexing for Bandwidth and Sampling Rate Multiplication of Digital−Analog Converters in Coherent Optical Transmission Systems

Autori: Oliver Hauck, Fred Buchali, Michael Collisi, and Michael Möller
Pubblicato in: 2024
Editore: RiverPublishers

Sub-THz Transceiver Design for Future Generation Mobile Communications

Autori: G. Mangraviti, C. Dehos, V. Puyal, O. Richard, G. Yaakoubi khbiza, F. Foglia Manzillo, X. V. L. Nguyen, F. Filice, E. Noccetti, P. L. Hellier, F. Podevin, S. Bourdel, A. Ruffino, K.-S. Choi, B. Abdelaziz Abdelmagid, M. Eleraky, H. Wang, B. Ardouin, T. K.
Pubblicato in: 2024
Editore: RiverPublishers

The Impact of Irradiation on DC Characteristics and Low-Frequency Noise of Advanced SiGe:C HBTs

Autori: B. Sagnes, A. Adebabay Belie, M. Bouhouche, J. El Beyrouthy, F. Pascal, J. Boch, P. Chevalier, and D. Gloria
Pubblicato in: 2024
Editore: RiverPublishers

B55X: A SHIFT in STMicroelectronics BiCMOS Technologies

Autori: P. Chevalier, A. Gauthier, N. Guitard, V. Milon, F. Monsieur, N. Derrier, C. Deglise-Favre, D. Cli, C. Durand, O. Foissey, F. Sonnerat, F. Gianesello, D. Gloria
Pubblicato in: 2024
Editore: RiverPublishers

D-band Modulated Signal Generation using Photonics Techniques

Autori: Y. M. Wodaje, B. Baridi, O. Occello, F. Danneville, P. Szriftgiser, and G. Ducournau
Pubblicato in: 2024
Editore: RiverPublishers

Challenges for 2.5D and 3D Integration of InP HBT Technology

Autori: Bertrand Ardouin, Tom K. Johansen, Antoine Chauvet, Romain Hersent, Virginie Nodjiadjim, Agnieszka Konczykowska, Nil Davy, Muriel Riet and Colin Mismer
Pubblicato in: 2024
Editore: RiverPublishers

Decarbonizing the Electronics Industry to Achieve Net Zero (2024)

Autori: Gunther Walden
Pubblicato in: 2024
Editore: RiverPublishers

Monographic books (1)

Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications

Autori: Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquiere, Pierre Busson, Urtė Steikūnienė
Pubblicato in: Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications, 2024
Editore: River Publisher
DOI: 10.13052/rp-9788770046640