A single, integrated workflow links epitaxial growth, crystallographic verification and atomically resolved spectroscopy/potential mapping, enabling unit-cell-level control of 2D junctions.
In-situ interfacial tuning of MoS2 demonstrates that band alignment and screening can be engineered during fabrication rather than corrected post-hoc.
MBE-grown MoS2–TaS2 lateral heterojunctions display signatures of low barrier behaviour at the nanoscale—an attractive path to lower contact resistance in 2D devices.
Quasi-freestanding ReS2/Gr/Ir(111) offers a clean route to probe and utilise the intrinsic, anisotropic properties of ReS2 for polarization-sensitive optoelectronics.
Indicative impacts
Device-level benefits: Lower effective barriers and controlled band bending support reduced power consumption and improved charge injection in transistors, photodiodes and sensors.
Transferable methodology: The growth–metrology pipeline, along with shareable protocols and analysis code, can be adopted by other labs and adapted to further 2D stacks.
Knowledge base: The project formulates practical design rules for interface engineering in TMD-based junctions, accelerating down-selection of device-ready heterostructures.
Key needs for further uptake
Demonstration: Fabricate and measure prototype devices to confirm low-barrier behaviour under operating conditions (I–V curves, temperature/illumination stability).
Scaling: Optimise growth for larger areas and diverse substrates while preserving interface quality.
Standards & data: Release curated STM/STS datasets with rich metadata; align with community schemas for interoperability and reuse.
IP & translation: Early novelty checks for interface-engineering protocols; where appropriate, defensive publication or patenting; engage SMEs and instrument makers for pilot lines (TRL 3–4).
