In the first reporting period, JOGATE execution showed significant foundational progress, with technical and scientific activities focusing on establishing the groundwork for achieving the project's objectives.
The first important aspect is ensuring access to multiple fabrication routes towards JoFET and superconducting diode components: here we did find credible directions towards large-scale integration group-IV channels in CEA's SiGe/Ge-Al contacts, already mature enough to be adopted for JOGATE demonstrators, confirmed by extensive simulation and design work led by CUT.
Additionally, silicon channel devices (p-type doping) are explored through CEA's metallic superconducting silicides, finding preliminary proof of high metal-semiconductor transparency, contributing towards reducing contact resistance and dissipation of integrated electronics.
Moreover, n-type doped silicon contacts to higher Tc superconductors are explored through VTT effort, which established relevant building blocks (doping, wet etching, contact interface engineering), and started the first pathfinder fabrication run.
For JoFET and superconducting diodes implemented with III-V heterostructures, UREG not only verified new phenomena and design concepts in circuital design but contributed to standardized characterization method of the components. This framework enabled validation of new fully-EU-grown heterostructures and will be applied to group-IV channel devices developed in the consortium. Finally, JYU has progressed extensively in developing physical theory which is already proving very valuable both in the interpretation of experimental results and seeding new ideas for component/device design.