Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications

Projektinformationen

Move2THz

ID Finanzhilfevereinbarung: 101139842

DOI

10.3030/101139842

EK-Unterschriftsdatum 16 Mai 2024

Startdatum 1 Juni 2024

Enddatum 31 Mai 2027

Finanziert unter

• Digital, Industry and Space

Gesamtkosten

€ 38 820 454,45

EU-Beitrag

€ 11 963 652,14

Koordiniert durch

SOITEC SA
France

Periodic Reporting for period 1 - Move2THz (Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications)

Berichtszeitraum: 2024-06-01 bis 2025-05-31

Zusammenfassung vom Kontext und den Gesamtzielen des Projekts

Indium Phosphide (InP) has outstanding and unique capabilities to surpass other technologies in terms of high-frequency performance.
Today, InP is only adopted in niche markets because of its costly and scarce substrates.
Move2THz aims to transform the InP platform providing commercially attractive, ecology-friendly, mass-market suitable substrates and technologies for sub-THz frequency operation, mobile/data connectivity and sensing.
The overarching objectives of the project are:
MO1 : To provide a competitive facility for the high volume InP manufacturing in Europe, ready to use for industry​,
MO2 : To foster and leverage a European ecosystem on InP from the material to the application level and widen the market adoption,
MO3 : To demonstrate an overall CO2 footprint reduction all along the product life cycle, from cradle to grave.

Arbeit, die ab Beginn des Projekts bis zum Ende des durch den Bericht erfassten Berichtszeitraums geleistet wurde, und die wichtigsten bis dahin erzielten Ergebnisse

Over the first period the Move2Thz value chain achieved:
In WP1: Specification requirements achieved after significant discussion and workshops, guidelines defined for the LCA​
In WP2: preliminary 100mm InPoSi substrates and bulk developed and sampled​
In WP3: Both MOCVD and MBE epitaxy growth on InPoSi substrates successfully developed​
In WP4: Several partners have fabricated their first set of HBT/HEMT devices, with good and comparable performance observed on InPoSi and InP substrates
In WP5: preliminary design work, leveraging the PDK provided by DIRAMICS, ETHZ, and III-V lab
In WP6: strong visual identity, templates, communication tools, project website, social media channels, video-sharing platforms, and printed promotional material and dissemination activities in target events.
In WP7: organization of the Kick-off meeting, the 6M & 12M General Assembly meetings, and the first two SC meetings. Tools, plans, and strategies were elaborated to cope with CHIPS JU requirements.​

Fortschritte, die über den aktuellen Stand der Technik hinausgehen und voraussichtliche potenzielle Auswirkungen (einschließlich der bis dato erzielten sozioökonomischen Auswirkungen und weiter gefassten gesellschaftlichen Auswirkungen des Projekts)

The technological developments underway in Move2THz are all breakthrough results including 7 patents and encompassing :
- A First European 150mm InP bulk by FCM,
- First Worldwide InPoSi substrates developed and tested by several partners in 100mm, 150mm,
- A first Worldwide 200mm InPoSi combining the tilling and Smart Cut process was realized, the test is underway and will be released,
- A first 300mm MOCVD Reactor Prototype​ was designed and built; it will be installed and validated in Period 2,
- Validation of reliable Epitaxy growth on InPoSi substrates enabling to provide the first HBT and HEMT stacks,
- A first Worldwide HBT and HEMT devices on InPoSi substrates. A journal paper was published showing a benchmark with standard device on InP bulk,
- The characterization and simulation platforms including 500GHz RF test capabilities up and running.
The second period will use these results to pave the way for exploitation on photonics and RF markets.

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