Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications

Información del proyecto

Move2THz

Identificador del acuerdo de subvención: 101139842

DOI

10.3030/101139842

Fecha de la firma de la CE 16 Mayo 2024

Fecha de inicio 1 Junio 2024

Fecha de finalización 31 Mayo 2027

Financiado con arreglo a

• Digital, Industry and Space

Coste total

€ 38 820 454,45

Aportación de la UE

€ 11 963 652,14

Coordinado por

SOITEC SA
France

Periodic Reporting for period 1 - Move2THz (Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications)

Período documentado: 2024-06-01 hasta 2025-05-31

Resumen del contexto y de los objetivos generales del proyecto

Indium Phosphide (InP) has outstanding and unique capabilities to surpass other technologies in terms of high-frequency performance.
Today, InP is only adopted in niche markets because of its costly and scarce substrates.
Move2THz aims to transform the InP platform providing commercially attractive, ecology-friendly, mass-market suitable substrates and technologies for sub-THz frequency operation, mobile/data connectivity and sensing.
The overarching objectives of the project are:
MO1 : To provide a competitive facility for the high volume InP manufacturing in Europe, ready to use for industry​,
MO2 : To foster and leverage a European ecosystem on InP from the material to the application level and widen the market adoption,
MO3 : To demonstrate an overall CO2 footprint reduction all along the product life cycle, from cradle to grave.

Trabajo realizado desde el comienzo del proyecto hasta el final del período abarcado por el informe y los principales resultados hasta la fecha

Over the first period the Move2Thz value chain achieved:
In WP1: Specification requirements achieved after significant discussion and workshops, guidelines defined for the LCA​
In WP2: preliminary 100mm InPoSi substrates and bulk developed and sampled​
In WP3: Both MOCVD and MBE epitaxy growth on InPoSi substrates successfully developed​
In WP4: Several partners have fabricated their first set of HBT/HEMT devices, with good and comparable performance observed on InPoSi and InP substrates
In WP5: preliminary design work, leveraging the PDK provided by DIRAMICS, ETHZ, and III-V lab
In WP6: strong visual identity, templates, communication tools, project website, social media channels, video-sharing platforms, and printed promotional material and dissemination activities in target events.
In WP7: organization of the Kick-off meeting, the 6M & 12M General Assembly meetings, and the first two SC meetings. Tools, plans, and strategies were elaborated to cope with CHIPS JU requirements.​

Avances que van más allá del estado de la técnica e impacto potencial esperado (incluida la repercusión socioeconómica y las implicaciones sociales más amplias del proyecto hasta la fecha)

The technological developments underway in Move2THz are all breakthrough results including 7 patents and encompassing :
- A First European 150mm InP bulk by FCM,
- First Worldwide InPoSi substrates developed and tested by several partners in 100mm, 150mm,
- A first Worldwide 200mm InPoSi combining the tilling and Smart Cut process was realized, the test is underway and will be released,
- A first 300mm MOCVD Reactor Prototype​ was designed and built; it will be installed and validated in Period 2,
- Validation of reliable Epitaxy growth on InPoSi substrates enabling to provide the first HBT and HEMT stacks,
- A first Worldwide HBT and HEMT devices on InPoSi substrates. A journal paper was published showing a benchmark with standard device on InP bulk,
- The characterization and simulation platforms including 500GHz RF test capabilities up and running.
The second period will use these results to pave the way for exploitation on photonics and RF markets.

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