Topological semi-metals as interconnects for 3D integrated energy efficient electronics

Ziel

Electronics consume a huge amount of world’s energy – rising from ~ 5% in 2024 to > 20% in 2030. Interconnects account for a large fraction of the energy consumed due to high resistive and capacitive losses. State-of-the-art interconnect components: metal wires; diffusion barriers; and low dielectric constant (k) materials are dissipating power at an unsustainable rate. Therefore, there is an urgent need to develop new materials for energy efficient interconnects. Topological semi-metals as nanoscale metal wires, atomically thin MoS2 diffusion barriers, and amorphous boron nitride (a-BN) as ultra-low k dielectrics have emerged as the most promising materials for interconnects. However, serious challenges such as conductivity retention down to 3 nm, conformal deposition, k < 2 dielectric, and industry compatible damascene and complementary metal oxide semiconductor (CMOS) processes integration remain. Therefore, completely new approaches are needed to reap the benefits of the proposed materials for interconnects.

TOPCONNECT provides frontier approaches to interconnect challenges by designing, engineering, and optimising the three components individually first, then seamlessly integrating them with ultra-clean interfaces to achieve low resistive and capacitive losses in nanoscale wires (< 30 nm) for the first time. All three materials will be deposited at back-of-the-line (BEOL) compatible temperatures of < 400 oC using our novel plasma assisted wafer scale processes. The integration of high-quality topological semi-metals, 2D MoS2, and a-BN with ideal interfaces will provide ultra-low power, industry-compatible interconnects that have the potential to transform the technology landscape in AI/ML computing through enabling of ultra-low power 3D chips. In sum, the proposed work in TOPCONNECT will decrease circuit delay by 50% and improve power efficiency by 70%. These materials, therefore, are expected to bring about a paradigm shift in interconnect technology.

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