Ultra-Low Power Multiferroic Devices via Vertical Stacking of Atomically Thin Materials.

Projektbeschreibung

Elektronik mit künstlichen multiferroischen Systemen revolutionieren

Zweidimensionale (2D) Materialien mit ihren atomar dünnen Strukturen bieten bahnbrechende Möglichkeiten in Hinsicht auf die Entwicklung miniaturisierter, energieeffizienter Technologien, um den wachsenden Bedarf an leistungsstarker Elektronik mit geringem Energieverbrauch zu decken. Das Ziel des innerhalb der Marie-Skłodowska-Curie-Maßnahmen unterstützten Projekts 2D-MULTISTACK besteht in der Entwicklung künstlicher multiferroischer Systeme, die ferromagnetische und ferroelektrische 2D-Schichten zu vertikalen Heterostrukturen kombinieren. Diese Materialien, die eine spontane Magnetisierung und elektrische Polarisation aufweisen, verfügen über das Potenzial, konventionelle Multiferroika zu übertreffen, die nur in geringen Mengen verfügbar und empfindlich gegenüber Umgebungsbedingungen sind. Die vorgeschlagene Forschungsanstrengung zielt darauf ab, innovative Lösungen für die Elektronik der nächsten Generation zu liefern und damit effizienten, miniaturisierten Bauelementen den Weg zu bereiten, die zukünftige Technologien und praktische Anwendungen revolutionieren könnten.

Ziel

New technologies - such as artificial intelligence or machine learning - are expected to consume a large amount of energy resources, with an increasing demand on faster, more efficient electronic and memory devices that can supply the growing energetic needs of society. The current situation calls for the development of electronic circuits with better performances while keeping a low-power consumption profile.

In this context, multiferroic systems - materials that combine ferromagnetism (spontaneous magnetization) and ferroelectricity (spontaneous electric polarization) - are optimal materials for such applications and may offer an advanced solution. However, conventional multiferroic are scarce and most of them present limitations, such as sensitivity to ambient conditions, thus making them unsuitable for high-performance electronic devices.

As alternative, two-dimensional (2D) systems - materials with a thickness of only few atoms - offer a wide catalogue of properties, representing a broad library of systems that can be employed for reaching future miniaturized electronic devices.

In this project, we propose to develop new artificial multiferroic devices by rationally combining ferromagnetic and ferroelectric atomically thin layers. By studying the electrical performance of the selected 2D magnetic/ferroelectric materials integrated into vertical van der Waals heterostructures with ultra-clean interfaces, we aim to achieve better electric performances. The project is feasible thanks to the synergy between the host group (experts in ferroelectric characterization) and the researcher (expert in 2D magnets). From a broader perspective, this fundamental study will represent an important step towards the miniaturization of low-power electronic devices, designed to consume less power with higher efficiencies, and their future commercialization into real-life applications.