Ultra-Low Power Multiferroic Devices via Vertical Stacking of Atomically Thin Materials.

Descrizione del progetto

Trasformare l’elettronica grazie ai sistemi multiferroici artificiali

I materiali bidimensionali (2D), con le loro strutture di spessore atomico, offrono un’opportunità rivoluzionaria per la creazione di tecnologie miniaturizzate ed efficienti dal punto di vista energetico, in grado di soddisfare la crescente domanda di dispositivi elettronici ad alte prestazioni e a basso consumo energetico. Con il sostegno del programma di azioni Marie Skłodowska-Curie, il progetto 2D-MULTISTACK mira a sviluppare sistemi multiferroici artificiali in grado di combinare strati bidimensionali ferromagnetici e ferroelettrici in eterostrutture verticali. Questi materiali, che presentano magnetizzazione spontanea e polarizzazione elettrica, hanno il potenziale per superare le prestazioni dei multiferroici convenzionali, che sono scarsi e sensibili alle condizioni ambientali. La ricerca proposta mira a fornire soluzioni innovative per l’elettronica di nuova generazione, aprendo la strada a dispositivi efficienti e miniaturizzati che potrebbero rivoluzionare le tecnologie future e le applicazioni concrete.

Obiettivo

New technologies - such as artificial intelligence or machine learning - are expected to consume a large amount of energy resources, with an increasing demand on faster, more efficient electronic and memory devices that can supply the growing energetic needs of society. The current situation calls for the development of electronic circuits with better performances while keeping a low-power consumption profile.

In this context, multiferroic systems - materials that combine ferromagnetism (spontaneous magnetization) and ferroelectricity (spontaneous electric polarization) - are optimal materials for such applications and may offer an advanced solution. However, conventional multiferroic are scarce and most of them present limitations, such as sensitivity to ambient conditions, thus making them unsuitable for high-performance electronic devices.

As alternative, two-dimensional (2D) systems - materials with a thickness of only few atoms - offer a wide catalogue of properties, representing a broad library of systems that can be employed for reaching future miniaturized electronic devices.

In this project, we propose to develop new artificial multiferroic devices by rationally combining ferromagnetic and ferroelectric atomically thin layers. By studying the electrical performance of the selected 2D magnetic/ferroelectric materials integrated into vertical van der Waals heterostructures with ultra-clean interfaces, we aim to achieve better electric performances. The project is feasible thanks to the synergy between the host group (experts in ferroelectric characterization) and the researcher (expert in 2D magnets). From a broader perspective, this fundamental study will represent an important step towards the miniaturization of low-power electronic devices, designed to consume less power with higher efficiencies, and their future commercialization into real-life applications.