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MOCVD technology for production of indium nitride based nanophotonic devices

Ziel

The main objective of this project is to develop an MOCVD technology (Equipment, Precursors, Gas purification and Growth processes) for the industrial production of Indium Nitride (InN) quantum dot based devices. The know-how produced will also be applicable to the production of InN and In-rich InGaN alloy based devices. On a purely scientific basis, this project will address the epitaxy of a new, challenging and extremely promising semiconductor material, InN, and its nanostructures. This material has a huge potential for applications in infrared emission and detection, for telecommunication applications, high efficiency solar cells and electro-optic modulators. Another aspect of the proposed project is linked to environmental issues. Nitride semiconductor growth is a much more environmental friendly technology compared to the state of the art since it involves non-toxic precursors. The consortium consists of three industrial partners (AIXTRON, EPICHEM, SAES Getters) and one international level academic laboratory (GES). They will join their complementary expertise to develop the advanced MOCVD technology for InN based nanophotonic devices. The workplan has 9 technological and scientific workpackages and 1 related to management issues. The work will be realized through a strong interaction between all partners. GES will qualify the new precursors, MOCVD and purifier technology and will use those for the process design. Based on the process results the equipment and precursors will continuously be optimised. At the end of the project, an InN nanostructure based LED will be realized as demonstrator, to qualify the whole production technology developed in the frame of the project. The project addresses the key activity NMP-2004-IST-NMP-3 of the second joint IST NMP call FP6-2004-IST-NMP-2.

Schlüsselbegriffe

Aufforderung zur Vorschlagseinreichung

FP6-2004-IST-NMP-2
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Koordinator

AIXTRON AG
EU-Beitrag
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Beteiligte (3)